公开(公告)号：US07009298B2

公开(公告)日：2006-03-07

申请号：US10639120

申请日：2003-08-11

Applicant: Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

Inventor： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC: H01L21/302

CPC classification number: H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

Abstract: A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor.

Abstract translation: 提供了一种接触结构，其结合使用四 - 二烷基酰氨基 - 钛，Ti（NMe 2 O 3）4 Si 3 O 4的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层。 ，作为前体。

公开(公告)号：US06793736B2

公开(公告)日：2004-09-21

申请号：US10392940

申请日：2003-03-20

Applicant: Gurtej S. Sandhu ,  Trung T. Doan

Inventor： Gurtej S. Sandhu ,  Trung T. Doan

IPC: B08B702

CPC classification number: H01L21/67069

Abstract: A method for providing a high flux of point of use activated reactive species for semiconductor processing wherein a workpiece is exposed to a gaseous atmosphere containing a transmission gas that is substantially nonattenuating to preselected wavelengths of electromagnetic radiation. A laminar flow of a gaseous constituent is also provided over a substantially planar surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the gaseous atmosphere such that it converges in the laminar flow to provide maximum beam energy in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The gaseous constituent is dissociated by the beam producing an activated reactive species that reacts with the surface of the workpiece.

Abstract translation: 一种用于提供用于半导体加工的高通量使用激活活性物质的方法，其中工件暴露于含有基本上不衰减到预选的电磁辐射波长的透射气体的气体气氛中。 气体成分的层流还设置在工件的基本上平坦的表面上，其中电磁辐射的束被引导到气态气氛中，使得其在层流中会聚以提供最接近表面的最大束能 的距离。 气体组分由光束解离，产生与工件表面反应的活化反应物质。

公开(公告)号：US5320880A

公开(公告)日：1994-06-14

申请号：US155585

申请日：1993-11-18

Applicant: Gurtej S. Sandhu ,  Trung T. Doan

Inventor： Gurtej S. Sandhu ,  Trung T. Doan

IPC: C23C16/24 ,  C23C16/505 ,  H01L21/02 ,  H01L21/205 ,  B05D3/06 ,  B05D3/02 ,  C23C16/00

CPC classification number: H01L28/84 ,  C23C16/24 ,  C23C16/505 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

Abstract: A method of providing a silicon film having a roughened outer surface atop a semiconductor wafer comprises: a) placing a semiconductor wafer into a plasma enhanced RF powered chemical vapor deposition reactor; and b) plasma enhanced chemical vapor depositing a layer of silicon over the wafer surface by providing quantities of a silicon source gas, a carrier gas, and TiCl.sub.4 to the reactor, the atomic ratio of the quantities of silicon source gas and TiCl.sub.4 being greater than or equal to 4 at the wafer surface; and by maintaining the reactor at a selected RF power, pressure and temperature; the RF power being supplied at a frequency of at least 5 MHz and preferably at least 10 MHz, the quantities of silicon source gas, RF power, temperature and pressure being effective to produce a predominately silicon film having an outer surface, the quantity of TiCl.sub.4 being effective to induce roughness into the outer silicon surface as compared to an outer silicon surface prepared under identical conditions but for introduction of TiCl.sub.4 but ineffective to produce a predominately titanium silicide film.

Abstract translation: 提供在半导体晶片顶部具有粗糙化的外表面的硅膜的方法包括：a）将半导体晶片放置在等离子体增强的RF功率化学气相沉积反应器中; 和b）通过向反应器提供大量的硅源气体，载气和TiCl 4，等离子体增强化学气相沉积在晶片表面上的硅层，硅源气体和TiCl 4的量的原子比大于 或在晶片表面等于4; 并通过将反应器维持在选定的RF功率，压力和温度; RF功率以至少5MHz，优选至少10MHz的频率提供，硅源气体的量，RF功率，温度和压力有效地产生主要具有外表面的硅膜，TiCl 4的量 与在相同条件下制备的但用于引入TiCl 4但不能产生主要的硅化钛膜的外硅表面相比，有效地将粗糙度引入外硅表面。

公开(公告)号：US5278100A

公开(公告)日：1994-01-11

申请号：US789585

申请日：1991-11-08

Applicant: Trung T. Doan ,  Gurtej S. Sandhu

Inventor： Trung T. Doan ,  Gurtej S. Sandhu

IPC: H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/441

CPC classification number: H01L21/76855 ,  H01L21/285 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76877 ,  Y10S148/147

Abstract: A method of providing a conformal layer of TiSi.sub.x atop a semiconductor wafer within a chemical vapor deposition reactor includes the following steps: a) positioning a wafer within the reactor; b) injecting selected quantities of gaseous Ti(NR.sub.2).sub.4 precursor, gaseous silane and a carrier gas to within the reactor, where R is selected from the group consisting of H and a carbon containing radical, the quantities of Ti(NR.sub.2).sub.4 precursor and silane being provided in a volumetric ratio of Ti(NR.sub.2).sub.4 to silane of from 1:300 to 1:10, the quantity of carrier gas being from about 50 sccm to about 2000 sccm and comprising at least one noble gas; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the precursor and silane to deposit a film on the wafer, the film comprising a mixture of TiSi.sub.x and TiN, the selected temperature being from about 100.degree. C. to about 500.degree. C., and the selected pressure being from about 150 mTorr to about 100 Torr.

Abstract translation: 在化学气相沉积反应器内提供半导体晶片顶部的TiSix共形层的方法包括以下步骤：a）将晶片定位在反应器内; b）将选定量的气态Ti（NR 2）4前体，气态硅烷和载气注入反应器内，其中R选自H和含碳基团，Ti（NR 2）4前体的量 硅烷以Ti（NR 2）4与硅烷的体积比为1:300至1:10，载气量为约50sccm至约2000sccm并包含至少一种惰性气体; 以及c）将所述反应器保持在选择的压力和所选择的温度下，所述选择的温度对于使所述前体和硅烷反应以在所述晶片上沉积膜是有效的，所述膜包含TiSix和TiN的混合物，所述选定温度为约100℃ 至约500℃，并且所选择的压力为约150mTorr至约100Torr。

公开(公告)号：US5252518A

公开(公告)日：1993-10-12

申请号：US845215

申请日：1992-03-03

Applicant: Gurtej S. Sandhu ,  Trung T. Doan

Inventor： Gurtej S. Sandhu ,  Trung T. Doan

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/441

CPC classification number: H01L23/53257 ,  H01L21/28518 ,  H01L21/76889 ,  H01L2924/0002 ,  Y10S148/147 ,  Y10S438/935

Abstract: A LPCVD method for depositing a film of TiN on a semiconductor structure includes reacting an organometallic titanium source gas such as TMAT and organic silane as a reactive gas. The deposited film is a mixed phase of TiN and TiSi.sub.2 and is characterized by a low contact resistance, good step coverage and good barrier properties. The reaction is preferably carried out in a cold wall CVD reactor at relatively low temperatures (i.e. 200.degree. C.) and at pressures of from about 0.05 to 30 Torr.

Abstract translation: 用于在半导体结构上沉积TiN膜的LPCVD方法包括使诸如TMAT的有机金属钛源气体和有机硅烷作为反应气体反应。 沉积膜是TiN和TiSi2的混合相，其特征在于接触电阻低，阶梯覆盖率好，阻隔性好。 该反应优选在相对低的温度（即200℃）和约0.05至30托的压力下在冷壁CVD反应器中进行。

公开(公告)号：US5232875A

公开(公告)日：1993-08-03

申请号：US961565

申请日：1992-10-15

Applicant: Mark E. Tuttle ,  Trung T. Doan ,  Angus C. Fox ,  Gurtej S. Sandhu ,  Hugh E. Stroupe

Inventor： Mark E. Tuttle ,  Trung T. Doan ,  Angus C. Fox ,  Gurtej S. Sandhu ,  Hugh E. Stroupe

IPC: B24B1/00 ,  B24B37/10 ,  H01L21/00 ,  H01L21/304

CPC classification number: B24B37/102 ,  H01L21/67023 ,  Y10S438/959

Abstract: A method and apparatus for improving planarity of chemical mechanical planarization of semiconductor wafers. The wafer is affixed to the planar surface of a wafer carrier. A planar platen, on which is mounted a polishing pad, is moved about in a plane parallel to the pad surface with either an orbital, fixed-direction vibratory, or random-direction vibratory motion. In one embodiment of the invention, pressure between the surface of the wafer to be polished and the moving polishing pad is generated by the force of gravity acting on at least the wafer and the carrier; in another it is provided by a mechanical force applied normal to the wafer surface. The polishing pad is wetted with a slurry having abrasive particles suspended in a liquid which may be chemically reactive with respect to at least one material on the wafer.

Abstract translation: 一种用于改善半导体晶片的化学机械平面化的平面性的方法和装置。 晶片固定在晶片载体的平面上。 安装有抛光垫的平面压板在与轨道，固定方向振动或随机振动运动平行的平面中移动。 在本发明的一个实施例中，待抛光的晶片的表面与移动的抛光垫之间的压力通过作用于至少晶片和载体的重力产生; 在另一个中，它由通常施加于晶片表面的机械力提供。 抛光垫用具有悬浮在液体中的研磨颗粒的浆液润湿，该液体可以相对于晶片上的至少一种材料具有化学反应性。

公开(公告)号：US06903010B2

公开(公告)日：2005-06-07

申请号：US10637427

申请日：2003-08-08

Applicant: Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

Inventor： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC: C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

Abstract: A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

Abstract translation: 提供了一种接触结构，其结合使用四 - 二烷基酰氨基 - 钛，Ti（NMe 2 O 3）4 Si 3 O 4的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层。 ，作为前体。 通过将通过电介质层的接触开口蚀刻到要进行电接触的扩散区域来制造接触结构。 钛金属沉积在晶片的表面上，使得扩散区域的暴露表面完全被金属层覆盖。 钛金属层的至少一部分最终被转化为硅化钛，从而在扩散区的表面提供优异的导电界面。 然后使用LPCVD工艺沉积氮化钛阻挡层，涂覆接触开口的壁和底板。 以下是多晶硅或金属的化学气相沉积。

公开(公告)号：US06632736B2

公开(公告)日：2003-10-14

申请号：US09921615

申请日：2001-08-03

Applicant: Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

Inventor： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC: H01L214763

CPC classification number: H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

Abstract: A contact structure incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through an dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

Abstract translation: Ti（NMe PDAT> 2 ）通过低压化学气相沉积（LPCVD）形成的非晶氮化钛阻挡层的接触结构， PDAT> 4 作为前体。 通过将通过电介质层的接触开口蚀刻到要进行电接触的扩散区域来制造接触结构。 钛金属沉积在晶片的表面上，使得扩散区域的暴露表面完全被金属层覆盖。 钛金属层的至少一部分最终被转化为硅化钛，从而在扩散区的表面提供优异的导电界面。 然后使用LPCVD工艺沉积氮化钛阻挡层，涂覆接触开口的壁和底板。 多晶硅或金属的化学气相沉积如下

公开(公告)号：US5849628A

公开(公告)日：1998-12-15

申请号：US762544

申请日：1996-12-09

Applicant: Gurtej S. Sandhu ,  Trung T. Doan

Inventor： Gurtej S. Sandhu ,  Trung T. Doan

IPC: C23C16/24 ,  C23C16/515 ,  H01L21/02 ,  H01L21/285 ,  H01L21/20

CPC classification number: H01L28/82 ,  C23C16/24 ,  C23C16/515 ,  H01L21/28525 ,  Y10S438/964

Abstract: A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.

公开(公告)号：US5723382A

公开(公告)日：1998-03-03

申请号：US509708

申请日：1995-07-31

Applicant: Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

Inventor： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC: C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76855 ,  C23C16/34 ,  H01L21/28568 ,  H01L21/76843

Abstract: This invention constitutes a contact structure incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe.sub.2).sub.4, as the precursor. The contact structure is fabricated by etching a contact opening through an dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon, or of metal, such as tungsten, follows, and proceeds until the contact opening is completely filled with either polycrystalline silicon or metal.

Abstract translation: 本发明构成了采用利用四 - 二烷基酰胺基钛，Ti（NMe 2）4作为前体的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层的接触结构。 通过将通过电介质层的接触开口蚀刻到要进行电接触的扩散区域来制造接触结构。 钛金属沉积在晶片的表面上，使得扩散区域的暴露表面完全被金属层覆盖。 钛金属层的至少一部分最终被转化为硅化钛，从而在扩散区的表面提供优异的导电界面。 然后使用LPCVD工艺沉积氮化钛阻挡层，涂覆接触开口的壁和底板。 多晶硅或金属如钨的化学气相沉积随后进行，直到接触开口完全充满多晶硅或金属。