公开(公告)号：US20240128328A1

公开(公告)日：2024-04-18

申请号：US17964356

申请日：2022-10-12

申请人： GlobalFoundries U.S. Inc.

发明人： Michael J. ZIERAK ,  Steven J. BENTLEY ,  Santosh SHARMA ,  Mark D. LEVY ,  Johnatan A. KANTAROVSKY

IPC分类号： H01L29/40 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/402 ,  H01L29/2003 ,  H01L29/6656 ,  H01L29/7786

摘要： The present disclosure relates to a structure which includes at least one gate structure over semiconductor material, the at least one gate structure comprising an active layer, a gate metal extending from the active layer and a sidewall spacer on sidewalls of the gate metal, and a field plate aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.

公开(公告)号：US20220384659A1

公开(公告)日：2022-12-01

申请号：US17330780

申请日：2021-05-26

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Anthony K. STAMPER ,  Uzma RANA ,  Steven M. SHANK ,  Mark D. LEVY

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/66

摘要： The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors and methods of manufacture. The structure includes: at least one gate structure having source/drain regions; at least one isolation structure within the source/drain regions in a substrate material; and semiconductor material on a surface of the at least one isolation structure in the source/drain regions.

公开(公告)号：US20220293811A1

公开(公告)日：2022-09-15

申请号：US17196756

申请日：2021-03-09

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Siva P. ADUSUMILLI ,  Mark D. LEVY ,  Yusheng BIAN

IPC分类号： H01L31/105 ,  H01L31/0352 ,  H01L31/18

摘要： The present disclosure relates to semiconductor structures and, more particularly, to photodetectors used with a broadband signal and methods of manufacture. The structure includes: a first photodetector; a second photodetector adjacent to the first photodetector; a first airgap of a first size under the first photodetector structured to detect a first wavelength of light; and a second airgap of a second size under the second photodetector structured to detect a second wavelength of light.

公开(公告)号：US20240194680A1

公开(公告)日：2024-06-13

申请号：US18078425

申请日：2022-12-09

申请人： GlobalFoundries U.S. Inc.

发明人： Santosh SHARMA ,  Michael J. ZIERAK ,  Mark D. LEVY ,  Steven J. BENTLEY

IPC分类号： H01L27/095 ,  H01L21/8252 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L27/095 ,  H01L21/8252 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786

摘要： The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure adjacent to a first source region; a second gate structure adjacent to a second source region; and field plates adjacent to the first gate structure, the second gate structure and a surface of an active layer of the first gate structure and the second gate structure.

公开(公告)号：US20230117591A1

公开(公告)日：2023-04-20

申请号：US17504051

申请日：2021-10-18

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Richard J. RASSEL ,  Johnatan A. KANTAROVSKY ,  Zhong-Xiang HE ,  Mark D. LEVY ,  Michel J. ABOU-KHALIL

IPC分类号： H01L29/06 ,  H01L29/778 ,  H01L29/66

摘要： The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor device with a dual isolation structure and methods of manufacture. The structure includes: a dual isolation structure including semiconductor material; and an active device region including a channel material and a gate metal material over the channel material. The channel material is between the dual isolation structure and the gate metal material includes a bottom surface not extending beyond a sidewall of the dual isolation structure.

公开(公告)号：US20220029032A1

公开(公告)日：2022-01-27

申请号：US16935854

申请日：2020-07-22

申请人： GLOBALFOUNDRIES U.S. INC.

发明人： Mark D. LEVY ,  Edward W. KIEWRA ,  Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN

IPC分类号： H01L29/868 ,  H01L29/06 ,  H01L29/66 ,  H01L31/107

摘要： The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: a spiral fin structure comprising semiconductor substrate material and dielectric material; a photosensitive semiconductor material over sidewalls and a top surface of the spiral fin structure, the photosensitive semiconductor material positioned to capture laterally emitted incident light; a doped semiconductor material above the photosensitive semiconductor material; and contacts electrically contacting the semiconductor substrate material and the doped semiconductor material from a top surface thereof.

公开(公告)号：US20240186384A1

公开(公告)日：2024-06-06

申请号：US18075930

申请日：2022-12-06

申请人： GlobalFoundries U.S. Inc.

发明人： Santosh SHARMA ,  Michael J. ZIERAK ,  Steven J. BENTLEY ,  Mark D. LEVY

IPC分类号： H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/402 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/401 ,  H01L29/66462 ,  H01L29/7786

摘要： The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor (HEMT) and methods of manufacture. The structure includes: a gate structure; a source contact and a drain contact adjacent to the gate structure; and a field plate electrically isolated from the gate structure and abutting the source contact and the drain contact.

公开(公告)号：US20220352210A1

公开(公告)日：2022-11-03

申请号：US17306078

申请日：2021-05-03

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Alvin J. JOSEPH ,  Ramsey HAZBUN

IPC分类号： H01L27/12 ,  H01L21/762 ,  H01L21/8234 ,  H01L23/66

摘要： The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.

公开(公告)号：US20220171123A1

公开(公告)日：2022-06-02

申请号：US17108732

申请日：2020-12-01

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Yusheng BIAN

IPC分类号： G02B6/122 ,  G02B6/13

摘要： The present disclosure relates to semiconductor structures and, more particularly, to a waveguide structure with attenuator and methods of manufacture. The structure includes: a waveguide structure including semiconductor material; an attenuator underneath the waveguide structure; an airgap structure vertically aligned with and underneath the waveguide structure and the attenuator; and shallow trench isolation structures on sides of the waveguide structure and merging with the airgap structure.

公开(公告)号：US20210391489A1

公开(公告)日：2021-12-16

申请号：US16899028

申请日：2020-06-11

申请人： GLOBALFOUNDRIES U.S. INC.

发明人： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Vibhor JAIN ,  John J. ELLIS-MONAGHAN

IPC分类号： H01L31/107 ,  H01L31/0352 ,  H01L31/18

摘要： The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one vertical pillar feature within a trench; a photosensitive semiconductor material extending laterally from sidewalls of the at least one vertical pillar feature; and a contact electrically connecting to the photosensitive semiconductor material.