公开(公告)号：US20220205948A1

公开(公告)日：2022-06-30

申请号：US17699219

申请日：2022-03-21

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Lanxiang WANG ,  Bin LIU ,  Eng Huat TOH ,  Shyue Seng TAN ,  Kiok Boone Elgin QUEK

IPC: G01N27/414 ,  H01L29/16 ,  H01L29/04

Abstract: According to various embodiments, there is provided a sensor device that includes: a substrate and two semiconductor structures. Each semiconductor structure includes a source region and a drain region at least partially disposed within the substrate, a channel region between the source region and the drain region, and a gate region. A first semiconductor structure of the two semiconductor structures further includes a sensing element electrically connected to the first gate structure. The sensing element is configured to receive a solution. The drain regions of the two semiconductor structures are electrically coupled. The source regions of the two semiconductor structures are also electrically coupled. A mobility of charge carriers of the channel region of a second semiconductor structure of the two semiconductor structures is lower than a mobility of charge carriers of the channel region of the first semiconductor structure.

公开(公告)号：US20190036011A1

公开(公告)日：2019-01-31

申请号：US15661826

申请日：2017-07-27

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Bin LIU ,  Eng Huat TOH ,  Ruchil Kumar JAIN

IPC: H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  G01R33/07 ,  G01R33/02 ,  G01R33/00

CPC classification number: H01L43/04 ,  G01R33/0052 ,  G01R33/0206 ,  G01R33/077 ,  H01L27/22 ,  H01L43/065 ,  H01L43/14

Abstract: A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; providing n-type dopant in the first and second n-type wells; and providing p-type dopant in the p-type well and the first n-type well.

公开(公告)号：US20200182826A1

公开(公告)日：2020-06-11

申请号：US16215688

申请日：2018-12-11

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Bin LIU ,  Eng Huat TOH ,  Shyue Seng TAN ,  Ming Tsang TSAI ,  Khee Yong LIM ,  Kiok Boone Elgin QUEK

IPC: G01N27/414

Abstract: A sensor device may include a substrate, first and second source regions, first and second drain regions, first and second channel regions, and first and second gate structures disposed over the first and second channel regions, respectively. The source regions and drain regions may be at least partially disposed within the substrate. The first and second source regions may have first and second source resistances, respectively, and the second source resistance may be higher than the first source resistance. The first gate structure may receive a solution, and a change in pH in the solution may cause a change in a first current flow through the first channel region. In turn, the second current flow through the second channel region may change to compensate for the change in the first current flow to maintain a constant current flow through the sensor device.

公开(公告)号：US20190259936A1

公开(公告)日：2019-08-22

申请号：US16399393

申请日：2019-04-30

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Bin LIU ,  Eng Huat TOH ,  Ruchil Kumar JAIN

IPC: H01L43/04 ,  G01R33/00 ,  G01R33/02 ,  G01R33/07 ,  H01L43/14 ,  H01L43/06

Abstract: A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; providing n-type dopant in the first and second n-type wells; and providing p-type dopant in the p-type well and the first n-type well.