摘要:
A half-duplex communication system that allows a user terminal to confirm past communication contents even during a series of half-duplex communications is provided. The system includes a communication record database in which all communication contents of half-duplex communications are stored together with identifiers thereof. A half-duplex communication device for controlling half-duplex communications includes a communication record control device which receives a communication content, transmits the communication content together with the identifier thereof to the communication record database so as to store it therein, and reads out the communication record therein. In response to a communication record readout request, the half-duplex communication device reads out a communication record in place of transmitting the communication content to a user terminal.
摘要:
A half-duplex communication system that allows a user terminal to confirm past communication contents even during a series of half-duplex communications is provided. The system includes a communication record database in which all communication contents of half-duplex communications are stored together with identifiers thereof. A half-duplex communication device for controlling half-duplex communications includes a communication record control device which receives a communication content, transmits the communication content together with the identifier thereof to the communication record database so as to store it therein, and reads out the communication record therein. In response to a communication record readout request, the half-duplex communication device reads out a communication record in place of transmitting the communication content to a user terminal.
摘要:
The present invention provides a communication system, a control apparatus, a program and a recording medium that controls participation in a session using presence information on participation member and information of the session itself. A communication system in which a plurality of communication terminals are connected to each other through a network to establish communication between the communication terminals has a presence information registering section that registers presence information of the communication terminals, a participation condition setting section that sets a participation condition for participating in the communication, a communication information managing section that manages communication information related to a state of the communication, and a communication control section that controls participation in and separation from the communication of the communication terminals.
摘要:
The object of the present invention is to realize a method and a server which enable insertion of advertisement even in voice communication including multimedia communication. The server is configured as a server for managing PoC communication among multiple terminals, comprising: a right-to-speak management section for managing the right to speak of the multiple terminals; a data distribution section for transmitting and receiving data to and from the multiple terminals; and an advertisement control section for storing advertisement data and transmitting the stored advertisement data to the multiple terminals via the data distribution section.
摘要:
The object of the present invention is to realize a method and a server which enable insertion of advertisement even in voice communication including multimedia communication. The server is configured as a server for managing PoC communication among multiple terminals, comprising: a right-to-speak management section for managing the right to speak of the multiple terminals; a data distribution section for transmitting and receiving data to and from the multiple terminals; and an advertisement control section for storing advertisement data and transmitting the stored advertisement data to the multiple terminals via the data distribution section.
摘要:
Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces.
摘要:
A substrate has a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface of the substrate is constructed by alternately providing a first plane having a plane orientation of (0-33-8), and a second plane connected to the first plane and having a plane orientation different from the plane orientation of the first plane. A gate insulating film is provided on the surface of the substrate. A gate electrode is provided on the gate insulating film.
摘要:
An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.
摘要:
A main surface of a silicon carbide substrate is inclined by an off angle in an off direction from {0001} plane of a hexagonal crystal. The main surface has such a characteristic that, among emitting regions emitting photoluminescent light having a wavelength exceeding 650 nm of the main surface caused by excitation light having higher energy than band-gap of the hexagonal silicon carbide, the number of those having a dimension of at most 15 μm in a direction perpendicular to the off direction and a dimension in a direction parallel to the off direction not larger than a value obtained by dividing penetration length of the excitation light in the hexagonal silicon carbide by a tangent of the off angle is at most 1×104 per 1 cm2. Accordingly, reverse leakage current can be reduced.
摘要:
At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.