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发明授权
US08709950B2 Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate 有权
碳化硅衬底，外延晶片和碳化硅衬底的制造方法

Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate
摘要：
An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.
摘要（中）：

SiC基板包括准备具有主表面并由SiC制成的基底基板的步骤，使用第一碱性溶液洗涤主表面，并且在用第一碱性溶液洗涤步骤之后用第二碱性溶液洗涤主表面 。 SiC衬底具有主表面，主表面上的残留物的平均值等于或大于0.2且小于200。

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