公开(公告)号：US3878554A

公开(公告)日：1975-04-15

申请号：US39175873

申请日：1973-08-27

Applicant: FUJITSU LTD

Inventor： MIKOME KOICHI ,  MATSUDA YOSHIHIRO ,  NAMIKI YOSHIYUKI

IPC: H01L23/482 ,  H01L5/00

CPC classification number: H01L23/4822 ,  H01L24/01 ,  H01L2924/01327 ,  H01L2924/12036 ,  H01L2924/00

Abstract: A semiconductor device wherein a beam lead connected to each wiring layer is all formed on a silicon nitride film of a semiconductor wafer surface in a semiconductor device having a multilayer wiring structure on a semiconductor basic board.

Abstract translation: 在半导体基板上具有多层布线结构的半导体器件的半导体晶片表面的氮化硅膜上，全部形成与各布线层连接的光束引线的半导体器件。