公开(公告)号：US20210175330A1

公开(公告)日：2021-06-10

申请号：US17078139

申请日：2020-10-23

申请人： FUJITSU LIMITED

发明人： Kozo Makiyama

IPC分类号： H01L29/08 ,  H01L29/786 ,  H01L29/40 ,  H01L29/778 ,  H01L29/66 ,  H01L21/02

摘要： A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor over a substrate; a second semiconductor layer formed of a nitride semiconductor over the first semiconductor layer; a gate electrode formed over the second semiconductor layer; a source electrode and a drain electrode formed over the first semiconductor layer or the second semiconductor layer; a first region of an insulative film that is formed between the gate electrode and the source electrode over the second semiconductor layer, and contains positive charges; and a second region of the insulative film that is formed between the gate electrode and the drain electrode over the second semiconductor layer, and contains negative charges.

公开(公告)号：US20200251584A1

公开(公告)日：2020-08-06

申请号：US16733270

申请日：2020-01-03

申请人： FUJITSU LIMITED

发明人： Kozo Makiyama

IPC分类号： H01L29/778 ,  H01L29/51 ,  H01L29/66

摘要： A compound semiconductor device includes a semiconductor multilayer structure including an electron transit layer and an electron supply layer of a compound semiconductor; a source electrode, a gate electrode, and a drain electrode that are disposed above the semiconductor multilayer structure and are aligned in a first direction; a first insulating film that is formed on the semiconductor multilayer structure between the gate electrode and the drain electrode, and has a tensile stress; a second insulating film that is formed on the semiconductor multilayer structure between the gate electrode and the source electrode, and has a compressive stress; and a protective film that is formed between the first insulating film and the semiconductor multilayer structure, and between the second insulating film and the semiconductor multilayer structure.

公开(公告)号：US10199489B2

公开(公告)日：2019-02-05

申请号：US15716015

申请日：2017-09-26

申请人： FUJITSU LIMITED

发明人： Kozo Makiyama

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L21/285 ,  H01L29/205 ,  H01L29/20 ,  H01L29/32

摘要： A compound semiconductor device disclosed herein includes: a GaN carrier transit layer formed on a substrate; a barrier layer formed on the carrier transit layer; a first recess and a second recess formed in the barrier layer; a first InAlN layer and a second InAlN layer formed in the first recess and the second recess respectively, a composition ratio of In in the InAlN layers being equal to or more than 17% and equal to or less than 18%; a source electrode formed on the first InAlN layer; a drain electrode formed on the second InAlN layer; and a gate electrode formed on the barrier layer.

公开(公告)号：US09722037B2

公开(公告)日：2017-08-01

申请号：US15076076

申请日：2016-03-21

申请人： FUJITSU LIMITED

发明人： Kozo Makiyama

IPC分类号： H01L29/423 ,  H01L29/40 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778 ,  H01L29/08 ,  H01L29/20 ,  H01L29/06

CPC分类号： H01L29/42316 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7787

摘要： An embodiment of a compound semiconductor device includes: a substrate; a nitride compound semiconductor stacked structure formed on or above the substrate; and a gate electrode, a source electrode and a drain electrode formed on or above the compound semiconductor stacked structure. A recess positioning between the gate electrode and the drain electrode in a plan view is formed at a surface of the compound semiconductor stacked structure.

公开(公告)号：US09324821B2

公开(公告)日：2016-04-26

申请号：US13664745

申请日：2012-10-31

申请人： FUJITSU LIMITED

发明人： Kozo Makiyama

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/08 ,  H01L29/20

CPC分类号： H01L29/42316 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7787

摘要： An embodiment of a compound semiconductor device includes: a substrate; a nitride compound semiconductor stacked structure formed on or above the substrate; and a gate electrode, a source electrode and a drain electrode formed on or above the compound semiconductor stacked structure. A recess positioning between the gate electrode and the drain electrode in a plan view is formed at a surface of the compound semiconductor stacked structure.

摘要翻译： 化合物半导体器件的实施例包括：衬底; 形成在基板上或上方的氮化物化合物半导体层叠结构; 以及形成在化合物半导体层叠结构上或上方的栅电极，源电极和漏电极。 在化合物半导体堆叠结构的表面上形成在平面图中在栅电极和漏电极之间定位的凹部。

公开(公告)号：US20160049290A1

公开(公告)日：2016-02-18

申请号：US14926711

申请日：2015-10-29

申请人： FUJITSU LIMITED

发明人： Kozo Makiyama

IPC分类号： H01L21/02

CPC分类号： H01L21/0217 ,  H01L21/02274 ,  H01L21/02373 ,  H01L21/0254 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/42364 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a compound semiconductor stack structure including a plurality of compound semiconductor layers stacked over a semiconductor substrate; and a first insulating film covering the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a first region containing nitrogen element in excess of the stoichiometric ratio.

摘要翻译： 半导体器件包括：化合物半导体堆叠结构，包括堆叠在半导体衬底上的多个化合物半导体层; 以及覆盖所述化合物半导体堆叠结构的表面的第一绝缘膜，所述第一绝缘膜是氮化硅膜，所述氮化硅膜在顶侧包括含有超过化学计量比的氮元素的第一区域。

公开(公告)号：US09257514B2

公开(公告)日：2016-02-09

申请号：US14219375

申请日：2014-03-19

申请人： FUJITSU LIMITED

发明人： Shirou Ozaki ,  Naoya Okamoto ,  Kozo Makiyama ,  Toshihiro Ohki

IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L21/768 ,  H01L29/778 ,  H01L29/205 ,  H01L23/31 ,  H01L23/532 ,  H01L23/522 ,  H01L29/78 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L21/283 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76879 ,  H01L23/315 ,  H01L23/5222 ,  H01L23/53295 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/408 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L2924/0002 ,  H02M5/458 ,  H03F3/19 ,  H01L2924/00

摘要： A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts.

摘要翻译： 一种半导体器件包括：第一电极; 第二电极; 由多孔绝缘材料制成并形成在第一电极和第二电极上的层间绝缘膜; 以及分别电连接到第一电极和第二电极的连接部分，其中在层间绝缘膜与第一电极的表面，第二电极的表面和连接部分的表面的一部分之间形成空腔。

公开(公告)号：US09184273B2

公开(公告)日：2015-11-10

申请号：US14205740

申请日：2014-03-12

申请人： FUJITSU LIMITED

发明人： Kozo Makiyama

IPC分类号： H01L31/0312 ,  H01L21/338 ,  H01L29/778 ,  H01L23/29 ,  H01L23/31 ,  H01L29/66 ,  H01L29/40 ,  H01L29/43 ,  H01L29/51 ,  H01L29/20

CPC分类号： H01L29/778 ,  H01L23/291 ,  H01L23/3192 ,  H01L24/73 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/432 ,  H01L29/518 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure of nitride over the substrate; a passivation film that covers the compound semiconductor stacked structure; a gate electrode, a source electrode, and a drain electrode at a level above the compound semiconductor stacked structure; and an Si—C bond containing film that contains an Si—C bond and includes a part between the source electrode and the drain electrode. The part contacts at least a part of an upper surface of the compound semiconductor stacked structure or at least a part of an upper surface of the passivation film.

摘要翻译： 化合物半导体器件的实施例包括：衬底; 层叠在衬底上的氮化物的化合物半导体层叠结构; 覆盖化合物半导体堆叠结构的钝化膜; 栅极电极，源电极和漏极电极，高于化合物半导体堆叠结构; 以及包含Si-C键的含Si-C键的膜，并且包括在源电极和漏电极之间的部分。 该部分接触化合物半导体层叠结构的上表面的至少一部分或钝化膜的上表面的至少一部分。

公开(公告)号：US20150044825A1

公开(公告)日：2015-02-12

申请号：US14521978

申请日：2014-10-23

申请人： FUJITSU LIMITED

发明人： Masahito Kanamura ,  Kozo Makiyama

IPC分类号： H01L21/263 ,  H01L29/66 ,  H01L21/322

CPC分类号： H01L21/263 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3228 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed to be higher, for instance, in hydrogen concentration than the protection film so that the protection film is higher in refractive index the protection film. The protection film is formed to cover a gate electrode and extend to the vicinity of the gate electrode on an electron supplying layer. The protection film is formed on the entire surface to cover the protection film. According to this configuration, the gate leakage is significantly reduced by a relatively simple configuration to realize a highly-reliable compound semiconductor device achieving high voltage operation, high withstand voltage, and high output.

摘要翻译： 形成两层保护膜，使得保护膜正下方的薄层电阻高于保护膜正下方的薄层电阻。 作为绝缘膜，保护膜例如由SiN膜形成。 保护膜形成为比保护膜高的氢浓度，使保护膜的折射率高于保护膜。 保护膜形成为覆盖栅电极并延伸到电子供给层上的栅电极附近。 保护膜形成在整个表面上以覆盖保护膜。 根据该结构，通过相对简单的结构，可以显着降低栅极泄漏，以实现实现高电压操作，高耐压和高输出的高可靠性化合物半导体器件。

公开(公告)号：US20140367694A1

公开(公告)日：2014-12-18

申请号：US14301708

申请日：2014-06-11

申请人： FUJITSU LIMITED

发明人： Youichi KAMADA ,  Shirou OZAKI ,  Toshihiro Ohki ,  Kozo Makiyama ,  NAOYA OKAMOTO

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/66

CPC分类号： H01L29/7787 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/66431 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device includes a first semiconductor layer configured to be formed of a nitride semiconductor on a substrate; a second semiconductor layer configured to be formed of a nitride semiconductor on the first semiconductor layer; an insulation film configured to include an opening, and to be formed on the second semiconductor layer; a source electrode and a drain electrode configured to be formed on the second semiconductor layer; and a gate electrode configured to be formed at the opening on the second semiconductor layer. Both the insulation film and the second semiconductor layer include carbon in a neighborhood of an interface between the insulation film and the second semiconductor layer.

摘要翻译： 半导体器件包括被配置为在衬底上由氮化物半导体形成的第一半导体层; 第二半导体层，被配置为在所述第一半导体层上由氮化物半导体形成; 绝缘膜，被配置为包括开口，并且形成在所述第二半导体层上; 构造成形成在所述第二半导体层上的源电极和漏电极; 以及构造成形成在所述第二半导体层上的开口处的栅电极。 绝缘膜和第二半导体层都包括在绝缘膜和第二半导体层之间的界面附近的碳。