Patent search ap:("FAIRCHILD CAMERA INSTR CO") AND inv:"BITTMANN CHARLES A" Page 1

1.

发明授权
High frequency transistors 失效
Title translation: 高频晶体管

公开(公告)号：US3280391A

公开(公告)日：1966-10-18

申请号：US34171764

申请日：1964-01-31

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： BITTMANN CHARLES A , CHIH-TANG SAH

IPC: H01L21/00 , H01L21/288 , H01L23/485 , H01L27/00 , H01L29/00

CPC classification number: H01L27/00 , H01L21/00 , H01L21/288 , H01L23/485 , H01L29/00 , H01L2924/0002 , Y10S148/139 , H01L2924/00

2.

发明授权
Microwave negative resistance avalanche diode 失效
Title translation: 微波负极电弧二极管

公开(公告)号：US3493821A

公开(公告)日：1970-02-03

申请号：US3493821D

申请日：1967-01-27

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： BITTMANN CHARLES A , RUEGG HEINZ

IPC: H01L29/00 , H01L29/86 , H01L3/00 , H01L5/00 , H01L11/00

CPC classification number: H01L29/00 , H01L29/86

3.

发明授权
Method of forming a metal rectifying contact to semiconductor material by displacement plating 失效
Title translation: 通过置换电镀形成与半导体材料的金属整流接触的方法

公开(公告)号：US3397450A

公开(公告)日：1968-08-20

申请号：US57010166

申请日：1966-05-26

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： BITTMANN CHARLES A , CHIH-TANG SAH

IPC: H01L21/00 , H01L21/288 , H01L23/485 , H01L27/00 , H01L29/00

CPC classification number: H01L27/00 , H01L21/00 , H01L21/288 , H01L23/485 , H01L29/00 , H01L2924/0002 , Y10S148/037 , Y10S148/145 , H01L2924/00

4.

发明授权
Two-layer metallized high frequency transistor employing extended contacts to shield input terminal from output terminal and mounted in a coaxial cable 失效
Title translation: 两层金属化高频晶体管，从输出端子进入到屏幕输入端子的扩展触点，并在同轴电缆中安装

公开(公告)号：US3609473A

公开(公告)日：1971-09-28

申请号：US3609473D

申请日：1969-09-02

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： BITTMANN CHARLES A , PARKER GARY W

IPC: H01L23/485 , H01L29/00 , H01L3/00 , H01L5/00

CPC classification number: H01L23/485 , H01L24/01 , H01L29/00 , H01L2924/12036 , H01L2924/00

Abstract: The base and emitter contacts to a high frequency transistor are formed of two separate layers of metallization separated by an intervening dielectric. Either the base or the emitter lead is formed into a circular beam diaphragm, portions of which extend beyond the semiconductor chip. This circular lead mates around its external edge with an internal diaphragm in a coaxial package to form either the base or emitter connection to the transistor.

5.

发明授权
Method of fabrication of gunn effect devices 失效
Title translation: 枪击效应装置的制作方法

公开(公告)号：US3537919A

公开(公告)日：1970-11-03

申请号：US3537919D

申请日：1968-05-22

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： BITTMANN CHARLES A

IPC: H01L21/306 , H01L47/00 , H01L7/36 , H01L3/00 , H01L7/00

CPC classification number: H01L21/30621 , H01L47/00 , Y10S148/05 , Y10S148/051 , Y10S148/135 , Y10S438/90

Patent Agency Ranking