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公开(公告)号：US20180033879A1
公开(公告)日：2018-02-01
申请号：US15591643
申请日：2017-05-10
Inventor： Sung-Bum BAE , Sung Bock KIM
IPC: H01L29/778 , H01L29/66 , H01L29/20
CPC classification number: H01L29/7787 , H01L21/762 , H01L29/0657 , H01L29/2003 , H01L29/66462 , H01L29/7786
Abstract: A method for manufacturing a semiconductor device includes sequentially stacking a first epitaxial layer, a sacrificial layer, a second epitaxial layer, and a third epitaxial layer on a first substrate, forming a trench which penetrates the third epitaxial layer, the second epitaxial layer, and the sacrificial layer, forming a structure layer on an upper surface of the third epitaxial layer, forming a metal film which covers an inner surface of the trench and the structure layer, forming a second substrate which fills the trench and covers the metal film, and separating the second epitaxial layer, the third epitaxial layer, and the structure layer from the first epitaxial layer.
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公开(公告)号：US20190278151A1
公开(公告)日：2019-09-12
申请号：US16295786
申请日：2019-03-07
Inventor： Oh Kee KWON , Kisoo KIM , Sung Bock KIM , Young Ahn LEEM
Abstract: A light comb generating device according to a disclosed embodiment includes a light source for generating light in a reference wavelength band and outputting the generated light, and an optical comb generator for generating a light comb having a reference comb interval from the output light, wherein the light source changes a wavelength of the output light as much as a reference frequency interval for every reference time interval, the light comb is generated within a wavelength range of the reference frequency interval, and the reference wavelength band may be at least about 3 μm and no greater than about 30 μm.
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Patent Agency Ranking
3.发明申请公开(公告)号：US20140225121A1
公开(公告)日：2014-08-14
申请号：US14143716
申请日：2013-12-30
Inventor： Sung-Bum BAE , Sung Bock KIM , Eun Soo NAM
CPC classification number: H01L21/0254 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02505 , H01L21/0262 , H01L29/2003
Abstract: Provided are an aluminum gallium nitride template and a fabrication method thereof. The fabrication method includes forming an aluminum nitride (AlN) layer on a substrate, forming a first aluminum gallium nitride (AlxGa1-xN) layer on the aluminum nitride (AlN) layer, forming a second aluminum gallium nitride (AlyGa1-yN) layer on the first aluminum gallium nitride (AlxGa1-xN) layer, forming a third aluminum gallium nitride (AlzGa1-zN) layer on the second aluminum gallium nitride (AlyGal-yN) layer, wherein the first aluminum gallium nitride (AlxGa1-xN) layer, the second aluminum gallium nitride (AlyGa1-yN) layer, and the third aluminum gallium nitride (AlzGa1-zN) layer are formed to have crystal defects and a composition ratio of aluminum (where 1>x>y>z>0) that are gradually decreased as heights of the layers are increased.
Abstract translation: 提供了一种氮化镓铝模板及其制造方法。 制造方法包括在基板上形成氮化铝（AlN）层，在氮化铝（AlN）层上形成第一氮化镓铝（Al x Ga 1-x N）层，在第一铝氮化镓（AlAlGa1-xN）层上形成第二氮化镓铝 所述第一氮化镓铝（Al x Ga 1-x N）层，在所述第二氮化铝镓（AlyGal-yN）层上形成第三氮化镓铝（AlzGa1-zN）层，其中所述第一氮化镓铝（Al x Ga 1-x N） 第二氮化镓铝（Al y Ga 1-y N）层和第三氮化镓铝（AlzGa1-zN）层形成为具有晶体缺陷和铝（其中1> x> y> z> 0）的组成比为 随着层数的增加而逐渐减小。
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公开(公告)号：US20140213045A1
公开(公告)日：2014-07-31
申请号：US14230031
申请日：2014-03-31
Inventor： Sung Bum BAE , Eun Soo NAM , Jae Kyoung MUN , Sung Bock KIM , Hae Cheon KIM , Chull Won JU , Sang Choon KO , Jong-Won LIM , Ho Kyun AHN , Woo Jin CHANG , Young Rak PARK
IPC: H01L29/66
CPC classification number: H01L29/66446 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02647 , H01L21/8252 , H01L27/0605 , H01L27/0883
Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
Abstract translation: 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。
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公开(公告)号：US20150349208A1
公开(公告)日：2015-12-03
申请号：US14596253
申请日：2015-01-14
Inventor： Dong Churl KIM , Sung Bock KIM , Jong Bae KIM , Ju Hee BAEK
CPC classification number: H01L33/46 , H01L33/0095 , H01L33/20 , H01L33/42 , H01L33/44 , H01L2933/0025
Abstract: Provided herein is a semiconductor light emitting device capable of increasing the light extraction efficiency and a fabricating method thereof, the device including a buffer layer formed on a substrate; an n-type semiconductor layer formed on the buffer; an active layer formed on a partial area of the n-type semiconductor layer such that the n-type semiconductor layer is exposed; a p-type semiconductor layer formed on the active layer; a transparent conductive layer formed on the p-type semiconductor layer; a first mesa surface formed along a side wall of the active layer from a side wall of the transparent conductive layer; a passivation layer formed along the first mesa surface; and a metal reflectance film formed along the passivation layer such that it re-reflects escaping light, thereby re-reflecting escaping light to increase the light extraction efficiency.
Abstract translation: 本文提供能够提高光提取效率的半导体发光器件及其制造方法，该器件包括形成在衬底上的缓冲层; 在缓冲器上形成的n型半导体层; 形成在n型半导体层的局部区域上的有源层，以使n型半导体层露出; 形成在有源层上的p型半导体层; 形成在p型半导体层上的透明导电层; 从所述透明导电层的侧壁沿着所述有源层的侧壁形成的第一台面表面; 沿着所述第一台面表面形成的钝化层; 以及沿着钝化层形成的金属反射膜，使得其再次反射逸出的光，从而再次反射逸出的光以提高光提取效率。
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公开(公告)号：US20180254337A1
公开(公告)日：2018-09-06
申请号：US15966879
申请日：2018-04-30
Inventor： Sung-Bum BAE , Sung Bock KIM
IPC: H01L29/778 , H01L29/20 , H01L29/66
CPC classification number: H01L29/7787 , H01L21/762 , H01L29/0657 , H01L29/2003 , H01L29/66462 , H01L29/7786
Abstract: A semiconductor device includes a first semiconductor layer. A second semiconductor layer is disposed on the first semiconductor layer. A structure layer is disposed on the second semiconductor layer. A metal film covers a side surface of the first semiconductor layer, a side surface of the second semiconductor layer, and an upper surface of the structure layer. A flexible substrate covers the metal film.
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公开(公告)号：US20150155434A1
公开(公告)日：2015-06-04
申请号：US14192299
申请日：2014-02-27
Inventor： Sung Bock KIM , Sung Bum BAE
CPC classification number: H01L33/10 , H01L33/005
Abstract: Disclosed are a light emitting diode including: a buffer layer formed on a substrate; a Distributed Bragg Reflector (DBR) formed in a multilayer structure, in which mask patterns including opening regions and semiconductor layers formed on the mask patterns while being filled in the opening regions of the mask patterns are alternately formed, and formed on the buffer layer; and a light emitting structure formed on the DBR, and a manufacturing method thereof.
Abstract translation: 公开了一种发光二极管，包括：形成在基板上的缓冲层; 形成在多层结构中的分布布拉格反射器（DBR），其中在掩模图案的开口区域中填充掩模图案的掩模图案包括开口区域和形成在掩模图案上的半导体层，并形成在缓冲层上; 以及形成在DBR上的发光结构及其制造方法。
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