公开(公告)号：US20220141008A1

公开(公告)日：2022-05-05

申请号：US17488955

申请日：2021-09-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Kyongchun LIM ,  Chun Ju YOUN ,  Byung-seok CHOI ,  Young-Ho KO ,  Kap-Joong KIM ,  Minchul KIM ,  Ju Hee BAEK ,  Joong-Seon CHOE

IPC: H04L9/08

Abstract: Disclosed is a quantum key distribution system using an RFI (reference frame independent) QKD (quantum key distribution) protocol, which includes a first signal processing circuit that generates transmission basis information and transmission bit information, a quantum channel transmitter that generates a single photon or coherent light, and modulates the single photon or the coherent light based on the transmission basis information and the transmission bit information to generate a quantum signal, a quantum channel receiver that receives the quantum signal through a quantum channel and detects reception bit information from the quantum signal based on reception basis information, and a second signal processing circuit that generates the reception basis information, transmits the reception basis information to the first signal processing circuit through a public channel, and receives the transmission basis information from the first signal processing circuit through the public channel.

公开(公告)号：US20150349208A1

公开(公告)日：2015-12-03

申请号：US14596253

申请日：2015-01-14

Applicant: Electronics and Telecommunications Research Institute

Inventor： Dong Churl KIM ,  Sung Bock KIM ,  Jong Bae KIM ,  Ju Hee BAEK

IPC: H01L33/40 ,  H01L33/20 ,  H01L33/46

CPC classification number: H01L33/46 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0025

Abstract: Provided herein is a semiconductor light emitting device capable of increasing the light extraction efficiency and a fabricating method thereof, the device including a buffer layer formed on a substrate; an n-type semiconductor layer formed on the buffer; an active layer formed on a partial area of the n-type semiconductor layer such that the n-type semiconductor layer is exposed; a p-type semiconductor layer formed on the active layer; a transparent conductive layer formed on the p-type semiconductor layer; a first mesa surface formed along a side wall of the active layer from a side wall of the transparent conductive layer; a passivation layer formed along the first mesa surface; and a metal reflectance film formed along the passivation layer such that it re-reflects escaping light, thereby re-reflecting escaping light to increase the light extraction efficiency.

Abstract translation: 本文提供能够提高光提取效率的半导体发光器件及其制造方法，该器件包括形成在衬底上的缓冲层; 在缓冲器上形成的n型半导体层; 形成在n型半导体层的局部区域上的有源层，以使n型半导体层露出; 形成在有源层上的p型半导体层; 形成在p型半导体层上的透明导电层; 从所述透明导电层的侧壁沿着所述有源层的侧壁形成的第一台面表面; 沿着所述第一台面表面形成的钝化层; 以及沿着钝化层形成的金属反射膜，使得其再次反射逸出的光，从而再次反射逸出的光以提高光提取效率。