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    TRANSDUCER DEVICES HAVING DIFFERENT FREQUENCIES BASED ON LAYER THICKNESSES AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    TRANSDUCER DEVICES HAVING DIFFERENT FREQUENCIES BASED ON LAYER THICKNESSES AND METHOD OF FABRICATING THE SAME 有权
    具有基于层厚度的不同频率的传感器件及其制造方法

    公开(公告)号：US20110291207A1

    公开(公告)日：2011-12-01

    申请号：US12789685

    申请日：2010-05-28

    Applicant: David MARTIN ,  John CHOY

    Inventor： David MARTIN ,  John CHOY

    IPC: H01L29/84 ,  H01L21/66

    CPC classification number: H01L41/253 ,  G10K9/125 ,  H01L27/20 ,  Y10T29/42

    Abstract: A transducer array on a common substrate includes a membrane and first and second transducer devices. The membrane is formed on the common substrate, and includes a lower layer and an upper layer. The first transducer device includes a first resonator stack formed on at least the lower layer in a first portion of the membrane, the upper layer having a first thickness in the first portion of the membrane. The second transducer device includes a second resonator stack formed on at least the lower layer in a second portion of the membrane, the upper layer having a second thickness in the second portion of the membrane, where the second thickness is different from the first thickness, such that a first resonant frequency of the first transducer device is different from a second resonant frequency of the second transducer device.

    Abstract translation: 公共衬底上的换能器阵列包括膜和第一和第二换能器装置。 膜形成在公共基板上，并且包括下层和上层。 第一换能器装置包括形成在膜的第一部分中的至少下层上的第一谐振器叠层，上层在膜的第一部分具有第一厚度。 第二换能器装置包括形成在膜的第二部分中的至少下层上的第二谐振器叠层，上层在膜的第二部分具有第二厚度，其中第二厚度不同于第一厚度， 使得第一换能器装置的第一谐振频率与第二换能器装置的第二共振频率不同。

    MICROMACHINED HORN
    3.
    发明申请
    MICROMACHINED HORN 有权

    公开(公告)号：US20120269372A1

    公开(公告)日：2012-10-25

    申请号：US13536917

    申请日：2012-06-28

    Applicant: David MARTIN ,  Joel PHILLIBER ,  John CHOY

    Inventor： David MARTIN ,  Joel PHILLIBER ,  John CHOY

    IPC: H04R1/20 ,  H04R1/02

    CPC classification number: H04R1/30 ,  H01L27/20 ,  H04R17/005 ,  H04R2201/003 ,  Y10T29/42

    Abstract: An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile.

    Abstract translation: 声学装置包括通过基板的相对的第二表面的干蚀刻工艺形成在基板的第一表面上的换能器和形成在基板中的声喇叭。 声喇叭被定位成放大来自换能器的声波并且限定非线性横截面轮廓。

    MICROCAP ACOUSTIC TRANSDUCER DEVICE
    4.
    发明申请
    MICROCAP ACOUSTIC TRANSDUCER DEVICE 有权
    MICROCAP声学传感器设备

    公开(公告)号：US20100272310A1

    公开(公告)日：2010-10-28

    申请号：US12430966

    申请日：2009-04-28

    Applicant: Joel PHILLIBER ,  John CHOY ,  David MARTIN

    Inventor： Joel PHILLIBER ,  John CHOY ,  David MARTIN

    IPC: H04R1/02

    CPC classification number: H04R31/00

    Abstract: A device includes a first wafer, a second wafer, a gasket bonding the first wafer to the second wafer to define a cavity between the first wafer and the second wafer, and an acoustic transducer disposed on the first wafer and disposed within the cavity between the first wafer and the second wafer. One or more apertures are provided for communicating an acoustic signal between the acoustic transducer and an exterior of the device. An aperture may be formed in the cavity itself, or the cavity may be hermetically sealed. An aperture may be formed completely through the first wafer and located directly beneath at least a portion of the acoustic transducer.

    Abstract translation: 一种器件包括第一晶片，第二晶片，将第一晶片连接到第二晶片以在第一晶片和第二晶片之间限定空腔的垫圈，以及设置在第一晶片上并设置在第一晶片之间的空腔内的声换能器 第一晶片和第二晶片。 提供一个或多个孔，用于在声换能器和装置的外部之间传递声信号。 可以在空腔本身中形成孔，或者可以将空腔气密地密封。 孔可以完全穿过第一晶片形成，并且直接位于声换能器的至少一部分下方。

    MICROMACHINED HORN
    5.
    发明申请
    MICROMACHINED HORN 有权

    公开(公告)号：US20100278368A1

    公开(公告)日：2010-11-04

    申请号：US12434092

    申请日：2009-05-01

    Applicant: David MARTIN ,  Joel PHILLIBER ,  John CHOY

    Inventor： David MARTIN ,  Joel PHILLIBER ,  John CHOY

    IPC: H04R1/20 ,  H01L21/3065

    CPC classification number: H04R1/30 ,  H01L27/20 ,  H04R17/005 ,  H04R2201/003 ,  Y10T29/42

    Abstract: An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile.

    Abstract translation: 声学装置包括通过基板的相对的第二表面的干蚀刻工艺形成在基板的第一表面上的换能器和形成在基板中的声喇叭。 声喇叭被定位成放大来自换能器的声波并且限定非线性横截面轮廓。

    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE
    8.
    发明申请
    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE 审中-公开
    包含桥梁的声学谐振器结构

    公开(公告)号：US20120206015A1

    公开(公告)日：2012-08-16

    申请号：US13445268

    申请日：2012-04-12

    Applicant: John CHOY ,  Chris FENG ,  Phil NIKKEL

    Inventor： John CHOY ,  Chris FENG ,  Phil NIKKEL

    IPC: H01L41/08 ,  B05D5/12

    CPC classification number: H03H9/02149 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173

    Abstract: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

    Abstract translation: 声谐振器包括第一电极，第二电极和设置在第一和第二电极之间的压电层。 声谐振器还包括设置在第一电极，第二电极和压电层下方的反射元件。 反射元件，第一电极，第二电极和压电层的重叠包括声谐振器的有效区域。 声谐振器还包括与声谐振器的有源区域的终端相邻的桥。

    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE
    9.
    发明申请
    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE 审中-公开

    公开(公告)号：US20120194297A1

    公开(公告)日：2012-08-02

    申请号：US13443113

    申请日：2012-04-10

    Applicant: John CHOY ,  Chris FENG ,  Phil NIKKEL

    Inventor： John CHOY ,  Chris FENG ,  Phil NIKKEL

    IPC: H03H9/15 ,  H01L41/04

    CPC classification number: H03H9/02149 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173

    Abstract: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

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