Abstract:
In a semiconductor device, each of a first connection metal member, a second connection metal member, a third connection metal member, and a fourth connection metal member electrically connects a corresponding line to a corresponding one of main electrodes formed on lower surfaces and upper surfaces of first and second semiconductor elements. A cross-sectional area of each of the first connection metal member, the second connection metal member, the third connection metal member, and the fourth connection metal member is larger than a cross-sectional area of a fifth connection metal member that is disposed at a region located outside regions of the first and second semiconductor elements in a plan view.
Abstract:
A heating part of this radiant heater has a plurality of heating wires. The plurality of heating wires are connected in parallel such that a plurality of parallel groups may be formed by electrodes. Further, the plurality of parallel groups are connected in series by the electrodes. The heating parts are set to reach a radiation temperature for emitting the heat radiation which makes a human to feel warmth. The heating parts have a thermal resistance in a longitudinal direction which is set, when an object contacts on the surface, a temperature of the part where the object touches falls to a suppressed temperature lower than the radiation temperature. The temperature of the heating part increases rapidly in response to electric supply. When there is a contact with an object, the temperature of the heating part decreases rapidly.
Abstract:
An electrically conductive material used in the formation of heat-releasing filled via holes in an electronic component-incorporated multilayer circuit board with a heat radiation member, in which the electrically conductive material comprises metal particles as a conductive metal which is a mixture of a first conductive metal consisting of silver (Ag) or copper (Cu) and a second conductive metal consisting of tin (Sn), and a ratio of the atomicity of tin to the atomicity of silver or copper and tin is 27 to 40%, and an electronic device using the same.