公开(公告)号：US20070045570A1

公开(公告)日：2007-03-01

申请号：US11394825

申请日：2006-03-31

Applicant: Craig Chaney ,  Russell Low ,  Jonathan England

Inventor： Craig Chaney ,  Russell Low ,  Jonathan England

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/022 ,  H01J2237/082 ,  H01J2237/0822 ,  H01J2237/0827 ,  H01J2237/31705

Abstract: A technique for improving ion implanter productivity is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving productivity of an ion implanter having an ion source chamber. The method may comprise supplying a gaseous substance to the ion source chamber, the gaseous substance comprising one or more reactive species for generating ions for the ion implanter. The method may also comprise stopping the supply of the gaseous substance to the ion source chamber. The method may further comprise supplying a hydrogen containing gas to the ion source chamber for a period of time after stopping the supply of the gaseous substance.

Abstract translation: 公开了一种改善离子注入机生产率的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于提高具有离子源室的离子注入机的生产率的方法。 该方法可以包括向离子源室供应气态物质，该气态物质包含用于产生用于离子注入机的离子的一种或多种反应性物质。 该方法还可以包括停止向离子源室供应气态物质。 该方法还可以包括在停止供应气态物质后的一段时间内向离子源室供应含氢气体。

公开(公告)号：US20070085021A1

公开(公告)日：2007-04-19

申请号：US11505168

申请日：2006-08-16

Applicant: Eric Cobb ,  Russell Low ,  Craig Chaney ,  Leo Klos

Inventor： Eric Cobb ,  Russell Low ,  Craig Chaney ,  Leo Klos

IPC: H01J27/00

CPC classification number: H01J37/08 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022

Abstract: A technique improving performance and lifetime of inductively heated cathode ion sources is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and lifetime of an inductively heated cathode (IHC) ion source in an ion implanter. The method may comprise maintaining an arc chamber of the IHC ion source under vacuum during a maintenance of the ion implanter, wherein no gas is supplied to the arc chamber. The method may also comprise heating a cathode of the IHC ion source by supplying a filament with a current. The method may further comprise biasing the cathode with respect to the filament at a current level of 0.5-5 A without biasing the arc chamber with respect to the cathode. The method additionally comprise keeping a source magnet from producing a magnetic field inside the arc chamber.

Abstract translation: 公开了一种提高感应加热的阴极离子源的性能和寿命的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于改善离子注入机中的感应加热的阴极（IHC）离子源的性能和寿命的方法。 该方法可以包括在维护离子注入机期间将IHC离子源的电弧室保持在真空下，其中没有气体被供应到电弧室。 该方法还可以包括通过向灯丝提供电流来加热IHC离子源的阴极。 该方法还可以包括以0.5-5A的电流水平相对于灯丝偏置阴极而不使电弧室相对于阴极偏置。 该方法还包括保持源磁体在电弧室内产生磁场。

公开(公告)号：US20070178678A1

公开(公告)日：2007-08-02

申请号：US11342183

申请日：2006-01-28

Applicant: Christopher Hatem ,  Jonathan England ,  Larry Sneddon ,  Russell Low ,  Anthony Renau ,  Alexander Perel ,  Kourosh Saadatmand

Inventor： Christopher Hatem ,  Jonathan England ,  Larry Sneddon ,  Russell Low ,  Anthony Renau ,  Alexander Perel ,  Kourosh Saadatmand

IPC: H01L21/26

CPC classification number: H01J37/08 ,  C23C14/48 ,  H01J27/02 ,  H01J37/3171

Abstract: Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.

Abstract translation: 提供了用于其的离子注入和离子源的方法。 该方法涉及从包含多个元素的源馈送气体产生离子。 例如，源原料气体可以包含硼和至少两个其它元素（例如，X a，B B，B和C）。 使用这种源进料气体可以产生比某些常规方法多的优点，包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。 此外，在某些实施方案中，源进料气体的组成可以选择为在相对较高的温度（例如，大于350℃）下是热稳定的，其允许在许多常规离子源中使用这种气体（例如，间接加热 阴极（IHC），伯纳斯）在使用过程中产生这种温度。

公开(公告)号：US20060219954A1

公开(公告)日：2006-10-05

申请号：US11241894

申请日：2005-09-30

Applicant: Russell Low ,  Joseph Olson ,  David Timberlake ,  James McLane ,  Mark Saunders ,  James Cummings ,  Thomas Callahan ,  Jonathan England

Inventor： Russell Low ,  Joseph Olson ,  David Timberlake ,  James McLane ,  Mark Saunders ,  James Cummings ,  Thomas Callahan ,  Jonathan England

IPC: H01J37/08 ,  G21K5/10

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/31761 ,  Y10S438/961

Abstract: An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.

Abstract translation: 离子注入机包括静止的平面离子束的源，一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端，其通过正常光束路径机械扫描晶片 以及在注入期间响应于离子束中的毛刺的控制电路通过（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束引导离开正常光束路径，从而 在晶片上的植入转变位置处停止植入，（2）随后将晶片移动到植入恢复位置，其中晶片上的注入转变位置直接位于离子束的正常路径上，并且（3） 操作参数到其第一值以引导离子束沿着正常光束路径并在晶片上的注入转变位置处恢复离子注入。 操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。

公开(公告)号：US20070125957A1

公开(公告)日：2007-06-07

申请号：US11567522

申请日：2006-12-06

Applicant: Russell Low ,  Jonathan England ,  Stephen Krause ,  Eric Hermanson

Inventor： Russell Low ,  Jonathan England ,  Stephen Krause ,  Eric Hermanson

IPC: G01K1/08 ,  H01J3/14

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J37/15 ,  H01J37/18 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/30488 ,  H01J2237/31705 ,  H01L21/266

Abstract: Techniques for reducing effects of photoresist outgassing are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for reducing effects of photoresist outgassing in an ion implanter. The apparatus may comprise a drift tube located between an end-station and an upstream beamline component. The apparatus may also comprise a first variable aperture between the drift tube and the end-station. The apparatus may further comprise a second variable aperture between the drift tube and the upstream beamline component. The first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.

Abstract translation: 公开了减少光阻剂除气效果的技术。 在一个特定的示例性实施例中，技术可以被实现为用于减少离子注入机中的光致抗蚀剂除气的影响的装置。 该装置可以包括位于终端站和上游束线组件之间的漂移管。 该装置还可以包括漂移管和终端站之间的第一可变孔径。 该装置还可以包括漂移管和上游束线部件之间的第二可变孔径。 可以调节第一可变孔径和第二可变孔径以促进差动泵送。

公开(公告)号：US07576337B2

公开(公告)日：2009-08-18

申请号：US11620595

申请日：2007-01-05

Applicant: Piotr Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

Inventor： Piotr Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

IPC: H01J37/08

CPC classification number: H02M7/103

Abstract: A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.

Abstract translation: 一种用于离子注入系统的电源系统。 在一个具体示例性实施例中，系统可以被实现为包括低功率逆变器，堆栈驱动器和从电力逆变器接收电力源的高压发电单元的电源系统。 高电压发生单元可以包括高压变压器，用于提供乘以期望输出电平并被输送到离子束加速器的输入端的输出功率。 供电系统还可以包括封装高压发电单元的至少一部分的电介质外壳，从而防止内部元件的分解强度的变化。

公开(公告)号：US20080072413A1

公开(公告)日：2008-03-27

申请号：US11194260

申请日：2005-08-01

Applicant: Stephen Krause ,  Eric R. Cobb ,  Russell Low

Inventor： Stephen Krause ,  Eric R. Cobb ,  Russell Low

IPC: B23Q3/18 ,  H01J9/18 ,  H05H1/24

CPC classification number: H01J9/18 ,  Y10T29/49895 ,  Y10T29/49899 ,  Y10T29/53909

Abstract: A method and clamp system for use on an ion implanter system for aligning a cathode and filament relative to one another in-situ are disclosed. The invention includes a clamp system having a clamp including a first clamp member separably coupled to a second clamp member, and an opening to a mount portion of one of the cathode and the filament in at least one of the clamp members. Each clamp member includes a surface to engage a mount portion of one of the cathode and the filament. The opening is adapted to receive a positioning tool to position the cathode and the filament relative to one another by moving the mount portion when the clamp is released. The mount portion may include a tool receiving member to facilitate accurate positioning.

Abstract translation: 公开了一种用于离子注入机系统的方法和夹紧系统，用于将阴极和细丝相对于彼此原位排列。 本发明包括具有夹具的夹具系统，该夹具包括可分离地联接到第二夹紧构件的第一夹紧构件以及至少一个夹紧构件中的阴极和细丝之一的安装部分的开口。 每个夹持构件包括与阴极和细丝之一的安装部分接合的表面。 开口适于接收定位工具以通过在夹具被释放时移动安装部分来相对于彼此定位阴极和灯丝。 安装部分可以包括工具接收构件以便于精确定位。

公开(公告)号：US20060163489A1

公开(公告)日：2006-07-27

申请号：US11044659

申请日：2005-01-27

Applicant: Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

Inventor： Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

IPC: H01J27/00

CPC classification number: H01J27/08

Abstract: An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.

Abstract translation: 离子注入机具有源电弧室，该电弧室包括在电弧室的排斥端处的导电端壁，端壁具有围绕开口的中心部分。 陶瓷绝缘体固定在端壁的外表面上，例如通过外周螺纹与端壁的凹陷区域的周边处的配合螺纹啮合。 导电排斥器具有固定到绝缘体并延伸通过端壁开口的窄轴，以及设置在源弧室内与主体壁相邻的主体。 端壁，绝缘体和推斥器构造成在端壁的中心部分与（i）推斥体之间形成连续的真空间隙，（ii）推斥轴，和（iii）绝缘体。 绝缘体内表面可以具有脊状横截面。

公开(公告)号：US07402820B2

公开(公告)日：2008-07-22

申请号：US11289885

申请日：2005-11-30

Applicant: Russell Low ,  Joseph C. Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

Inventor： Russell Low ,  Joseph C. Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

IPC: H01L21/425 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/31705 ,  H01L22/12

Abstract: A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

Abstract translation: 公开了一种用于确定离子束污染的系统，方法和程序产品。 在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下，可以测量离子束中的第三离子并基于量 测量的第三离子，与预期离子相比的污染物离子的相对量。 污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

公开(公告)号：US20080164408A1

公开(公告)日：2008-07-10

申请号：US11620595

申请日：2007-01-05

Applicant: Piotr R. Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

Inventor： Piotr R. Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

IPC: H01J37/248 ,  H01F38/00

CPC classification number: H02M7/103

Abstract: A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.

Abstract translation: 一种用于离子注入系统的电源系统。 在一个具体示例性实施例中，系统可以被实现为包括低功率逆变器，堆栈驱动器和从电力逆变器接收电力源的高压发电单元的电源系统。 高电压发生单元可以包括高压变压器，用于提供乘以期望输出电平并被输送到离子束加速器的输入端的输出功率。 供电系统还可以包括封装高压发电单元的至少一部分的电介质外壳，从而防止内部元件的分解强度的变化。