公开(公告)号：US20070080414A1

公开(公告)日：2007-04-12

申请号：US11522856

申请日：2006-09-18

Applicant: Claes Bjorkman ,  Lawrence West ,  Dan Maydan ,  Samuel Broydo

Inventor： Claes Bjorkman ,  Lawrence West ,  Dan Maydan ,  Samuel Broydo

IPC: H01L31/0232

CPC classification number: G02B6/43 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/4204 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283 ,  H01L21/84 ,  H01L27/1203

Abstract: An article of manufacture comprising an optical-ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.

Abstract translation: 一种制造方法，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面和 横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面具有足以允许在其中形成微电子电路的质量，并且第二区域包括其中形成的光信号分配电路， 所述光信号分配电路由互连的半导体光子元件组成并且被设计成向要在第二半导体层的第一区域中制造的微电子电路提供信号。

公开(公告)号：US20050072979A1

公开(公告)日：2005-04-07

申请号：US10623665

申请日：2003-07-21

Applicant: Lawrence West ,  Dan Maydan ,  Samuel Broydo ,  Claes Bjorkman

Inventor： Lawrence West ,  Dan Maydan ,  Samuel Broydo ,  Claes Bjorkman

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B6/43 ,  H01L27/15

CPC classification number: G02B6/12 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/4201 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283 ,  G02B6/43

Abstract: An optical-ready substrate made at least in part of a first semiconductor material and having a front side and a backside, the front side having a top surface that is of sufficient quality to permit microelectronic circuitry to be fabricated thereon using semiconductor fabrication processing techniques. The optical-ready substrate includes an optical signal distribution circuit fabricated on the front side of the substrate in a first layer region beneath the top surface of the substrate. The optical signal distribution circuit is made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuitry to be fabricated thereon.

Abstract translation: 至少部分由第一半导体材料制成且具有正面和背面的光学就绪衬底，其前侧具有足够质量的顶表面，以允许使用半导体制造处理技术在其上制造微电子电路。 光学就绪衬底包括在衬底的顶表面下方的第一层区域中制造在衬底的前侧上的光信号分配电路。 光信号分配电路由互连的半导体光子元件组成，并被设计成向要在其上制造的微电子电路提供信号。

公开(公告)号：US07110629B2

公开(公告)日：2006-09-19

申请号：US10623666

申请日：2003-07-21

Applicant: Claes Bjorkman ,  Lawrence C. West ,  Dan Maydan ,  Samuel Broydo

Inventor： Claes Bjorkman ,  Lawrence C. West ,  Dan Maydan ,  Samuel Broydo

IPC: G02B6/12

CPC classification number: G02B6/43 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/4204 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283 ,  H01L21/84 ,  H01L27/1203

Abstract: An article of manufacture comprising an optical-ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.

Abstract translation: 一种制造方法，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面和 横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面具有足以允许在其中形成微电子电路的质量，并且第二区域包括其中形成的光信号分配电路， 所述光信号分配电路由互连的半导体光子元件组成并且被设计成向要在第二半导体层的第一区域中制造的微电子电路提供信号。

公开(公告)号：US07043106B2

公开(公告)日：2006-05-09

申请号：US10280492

申请日：2002-10-25

Applicant: Lawrence C. West ,  Claes Björkman ,  Dan Maydan ,  Samuel Broydo

Inventor： Lawrence C. West ,  Claes Björkman ,  Dan Maydan ,  Samuel Broydo

IPC: G02B6/12

CPC classification number: G02B6/43 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/4201 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283

Abstract: An optical ready substrate made at least in part of a first semiconductor material and having a front side and a backside, the front side having a top surface that is of sufficient quality to permit microelectronic circuitry to be fabricated thereon using semiconductor fabrication processing techniques. The optical ready substrate includes an optical signal distribution circuit fabricated on the front side of the substrate in a first layer region beneath the top surface of the substrate. The optical signal distribution circuit is made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuitry to be fabricated thereon.

Abstract translation: 至少部分由第一半导体材料制成并且具有前侧和后侧的光学就绪衬底，所述前侧具有足够质量的顶表面，以允许使用半导体制造处理技术在其上制造微电子电路。 光学就绪衬底包括在衬底的顶表面下方的第一层区域中制造在衬底的前侧上的光信号分配电路。 光信号分配电路由互连的半导体光子元件组成，并被设计成向要在其上制造的微电子电路提供信号。

公开(公告)号：US07072534B2

公开(公告)日：2006-07-04

申请号：US10280505

申请日：2002-10-25

Applicant: Claes Björkman ,  Lawrence C. West ,  Dan Maydan ,  Samuel Broydo

Inventor： Claes Björkman ,  Lawrence C. West ,  Dan Maydan ,  Samuel Broydo

IPC: G02B6/12

CPC classification number: G02B6/12004 ,  G02B6/12 ,  G02B6/30 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283 ,  G02B6/43

Abstract: An article of manufacture comprising an optical ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.

Abstract translation: 一种制品，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面，并且是 横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面的质量足以允许在其中形成微电子电路，并且第二区域包括其中形成的光信号分配电路， 光信号分配电路由互连的半导体光子元件组成，并被设计为向要在第二半导体层的第一区域中制造的微电子电路提供信号。

公开(公告)号：US07871469B2

公开(公告)日：2011-01-18

申请号：US10867591

申请日：2004-06-14

Applicant: Dan Maydan ,  Arkadii V. Samoilov

Inventor： Dan Maydan ,  Arkadii V. Samoilov

IPC: C30B21/02

CPC classification number: G02B6/132 ,  G02B2006/12095 ,  G02B2006/121 ,  Y10T117/10

Abstract: A method of forming a planar waveguide structure, comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, wherein the concentration of the first optical material increases with the height of the first graded layer; forming a second graded layer on the first graded layer, the second graded layer comprising the first and second optical materials wherein the concentration of the first optical material decreases with the height of the second graded layer. The method further including forming a uniform layer on the first graded layer, the uniform layer containing first and second optical materials wherein the first optical material concentration is constant.

Abstract translation: 一种形成平面波导结构的方法，包括在衬底上形成第一渐变层，其中所述第一渐变层包括第一和第二光学材料，其中所述第一光学材料的浓度随着所述第一渐变层的高度而增加 ; 在所述第一渐变层上形成第二渐变层，所述第二渐变层包括所述第一和第二光学材料，其中所述第一光学材料的浓度随着所述第二渐变层的高度而降低。 该方法还包括在第一梯度层上形成均匀的层，所述均匀层包含第一和第二光学材料，其中第一光学材料浓度恒定。

公开(公告)号：US06610354B2

公开(公告)日：2003-08-26

申请号：US09886174

申请日：2001-06-18

Applicant: Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

Inventor： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

IPC: C23C1640

CPC classification number: H01J11/38 ,  H01J11/12

Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

公开(公告)号：US06514850B2

公开(公告)日：2003-02-04

申请号：US09775010

申请日：2001-01-31

Applicant: Li-Qun Xia ,  Huong Thanh Nguyen ,  Ellie Yieh ,  Dan Maydan

Inventor： Li-Qun Xia ,  Huong Thanh Nguyen ,  Ellie Yieh ,  Dan Maydan

IPC: H01L214763

CPC classification number: H01L21/76829 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3144 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826

Abstract: Methods of forming an interface in a dielectric material to act as an indicator for terminating an etching process, and products produced thereby.

公开(公告)号：US6055927A

公开(公告)日：2000-05-02

申请号：US782169

申请日：1997-01-14

Applicant: Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

Inventor： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

IPC: B08B7/00 ,  C23C16/42 ,  C23C16/44 ,  C23C16/52 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC classification number: C23C16/4405

Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.

公开(公告)号：US6040022A

公开(公告)日：2000-03-21

申请号：US59734

申请日：1998-04-14

Applicant: Mei Chang ,  David N. K. Wang ,  John M. White ,  Dan Maydan

Inventor： Mei Chang ,  David N. K. Wang ,  John M. White ,  Dan Maydan

IPC: C23C16/50 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  B05D3/06 ,  C23C16/30

CPC classification number: C23C16/45565 ,  C23C16/345 ,  C23C16/455 ,  C23C16/5096

Abstract: An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

Abstract translation: 用于真空沉积室的入口气体歧管包括入口孔，其直径或横截面横向于气体流动方向增加。 孔径构造增加了解离气体如氮气，从而增加了由氮气化学提供的氮化硅沉积速率，而不需要使用诸如氨的反应物。 虽然如果需要，可以在沉积气体化学中使用氨，该方法提供完全消除氨的选择。 包含增加直径的气体入口孔的入口歧管提供对工艺和沉积膜的增强的控制，并且还可用于形成其它电介质，例如氧化硅和氮氧化硅。 特别地，氧氮化硅膜的特征在于低氢含量和组成均匀性。