公开(公告)号：US06812148B2

公开(公告)日：2004-11-02

申请号：US10219094

申请日：2002-08-13

Applicant: Chieh-Ju Chang ,  Tsai-Sen Lin ,  Chon-Shin Jou ,  Yifu Chung

Inventor： Chieh-Ju Chang ,  Tsai-Sen Lin ,  Chon-Shin Jou ,  Yifu Chung

IPC: H01L21311

CPC classification number: H01L21/28238 ,  C23C8/02 ,  C23C8/10 ,  C23C8/80 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/7621 ,  H01L29/518

Abstract: Embodiments of the present invention relate to a method for preventing gate oxide thinning in a recess LOCOS process. The plurality of trenches are separated by a patterned pad oxide and a patterned silicon nitride layer The patterned silicon nitride layer and the patterned pad oxide layer are removed to expose a surface of the substrate as an active area of the semiconductor device. An ion drive-in to the active area on the substrate is performed by directing a flow of oxygen and nitrogen toward the substrate at a predetermined temperature and with a sufficient amount of oxygen to at least substantially prevent silicon nitride from forming on the field oxide regions. The method further comprises forming a sacrificial oxide layer on the active area, removing the sacrificial oxide layer to expose the active area, and forming a gate oxide layer on the active area.

Abstract translation: 本发明的实施例涉及一种用于在凹槽LOCOS工艺中防止栅极氧化物稀化的方法。 多个沟槽由图案化的衬垫氧化物和图案化的氮化硅层分离。去除图案化的氮化硅层和图案化衬垫氧化物层，以暴露衬底的表面作为半导体器件的有效区域。 在衬底上的有源区域中的离子驱动通过在预定温度和足够量的氧气下引导氧和氮流向衬底来进行，以至少基本上防止在场氧化物区域上形成氮化硅 。 该方法还包括在有源区上形成牺牲氧化物层，去除牺牲氧化物层以暴露有源区，以及在有源区上形成栅极氧化物层。

公开(公告)号：US06974749B2

公开(公告)日：2005-12-13

申请号：US10677568

申请日：2003-10-01

Applicant: Shih-Chi Lai ,  Yifu Chung ,  Yi-Chuan Yang ,  Jen-Chieh Chang ,  Jason Chien-Sung Chu ,  Chun-De Lin

Inventor： Shih-Chi Lai ,  Yifu Chung ,  Yi-Chuan Yang ,  Jen-Chieh Chang ,  Jason Chien-Sung Chu ,  Chun-De Lin

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/336

CPC classification number: H01L21/763 ,  H01L21/76224 ,  H01L29/42368 ,  H01L29/66734

Abstract: Embodiments of the present invention are directed to a method of forming a bottom oxide layer in the trench in semiconductor devices, such as Double-Diffused Metal-Oxide Semiconductor (DMOS) devices. In one embodiment, a method of forming a bottom oxide layer in a trench structure comprises providing a semiconductor substrate; forming a silicon nitride layer on the semiconductor substrate; forming a first oxide layer on the silicon nitride layer; forming a trench structure in the semiconductor substrate; forming a second oxide layer on a bottom and sidewalls of the trench and on a surface of the first oxide layer; removing the first oxide layer and the second oxide layer on the surface of the silicon nitride layer; and removing the second oxide layer on the sidewalls of the trench and a portion of the second oxide layer on the bottom of the trench.

Abstract translation: 本发明的实施例涉及在诸如双扩散金属氧化物半导体（DMOS）器件的半导体器件中的沟槽中形成底部氧化物层的方法。 在一个实施例中，在沟槽结构中形成底部氧化物层的方法包括提供半导体衬底; 在所述半导体衬底上形成氮化硅层; 在所述氮化硅层上形成第一氧化物层; 在所述半导体衬底中形成沟槽结构; 在所述沟槽的底部和侧壁上以及所述第一氧化物层的表面上形成第二氧化物层; 去除氮化硅层表面上的第一氧化物层和第二氧化物层; 并且去除沟槽的侧壁上的第二氧化物层和沟槽底部上的第二氧化物层的一部分。

公开(公告)号：US06551900B1

公开(公告)日：2003-04-22

申请号：US09547730

申请日：2000-04-12

Applicant: Yifu Chung ,  Leon Chang ,  Ping-Wei Lin

Inventor： Yifu Chung ,  Leon Chang ,  Ping-Wei Lin

IPC: H01L2176

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/42368 ,  H01L29/512 ,  H01L29/66734 ,  H01L29/7813

Abstract: A method for improving gate oxide thinning issue at trench corners is disclosed. The method comprises steps as follows. Firstly, a silicon substrate having a trench therein is provided. HDPCVD technology to form a first oxide layer on the sidewall and the bottom of the trench is carried out. After performing an etchback to leave the first oxide layer on the bottom of the trench, a second oxide layer is formed on the first oxide layer and on sidewalls of the trench by LPCVD technology. Thereafter, an isotropic etching is performed so as to remove a substantially portion of the second oxide layer and leave a remnant portion of second oxide layer on the trench corners. As a consequently, the trench corners are smooth. Finally, a thermal oxidation to form a third oxide layer on the sidewall of the trench is carried achieved to accomplish the gate oxide formation.

Abstract translation: 公开了一种在沟槽角改善栅极氧化物薄化问题的方法。 该方法包括以下步骤。 首先，提供其中具有沟槽的硅衬底。 HDPCVD技术在沟槽的侧壁和底部上形成第一氧化物层。 在进行回蚀以在沟槽的底部离开第一氧化物层之后，通过LPCVD技术在第一氧化物层和沟槽的侧壁上形成第二氧化物层。 此后，进行各向同性蚀刻以去除第二氧化物层的大致部分，并且在沟槽角上留下第二氧化物层的残余部分。 因此，沟渠的角落是光滑的。 最后，实现在沟槽的侧壁上形成第三氧化物层的热氧化以实现栅极氧化物的形成。