公开(公告)号：US07979606B2

公开(公告)日：2011-07-12

申请号：US12041671

申请日：2008-03-04

Applicant: Ming-Feng Liu ,  Chun-De Lin

Inventor： Ming-Feng Liu ,  Chun-De Lin

IPC: G06F3/00 ,  G06F5/00 ,  G06F13/00 ,  G06F13/28

CPC classification number: G06F12/0246 ,  G06F2212/7203

Abstract: A method for storing data is disclosed. The method is used for storing data into a program memory used for storing program codes. The program memory is divided into a first buffer storage area and a second buffer storage area. By alternate accessing of the first buffer storage area and the second buffer storage area, instantly accessible data can be stored in the program memory, such that the conventional data memory can be replaced by the program memory of the present invention and the cost of the product can be reduced.

Abstract translation: 公开了一种用于存储数据的方法。 该方法用于将数据存储到用于存储程序代码的程序存储器中。 程序存储器分为第一缓冲存储区和第二缓冲存储区。 通过交替访问第一缓冲存储区域和第二缓冲存储区域，即时可访问的数据可以被存储在程序存储器中，使得传统的数据存储器可以由本发明的程序存储器代替并且产品的成本 可以减少

公开(公告)号：US20060176026A1

公开(公告)日：2006-08-10

申请号：US11182007

申请日：2005-07-15

Applicant: Yi-Hung Shen ,  Chun-De Lin

Inventor： Yi-Hung Shen ,  Chun-De Lin

IPC: H02J7/00

CPC classification number: H02J7/0075

Abstract: A method for charging and maintaining a rechargeable battery is provided. A time basis and a charging level are predetermined in the method. When the unused period of the battery does not exceeds the time basis, if the electric potential of the battery is more than the charging level, the battery will not be charged; otherwise, the battery will be charged. When the unused period of the battery exceeds the time basis, if the electric potential of the battery is more than the charging level, the battery will be discharged at first and then charged; otherwise, the battery will be directly charged.

Abstract translation: 提供了一种用于对可再充电电池进行充电和维护的方法。 在该方法中预定时间基准和充电水平。 当电池的未使用时间不超过时间时，如果电池的电位大于充电水平，则电池不会被充电; 否则，电池将被充电。 当电池的未使用时间超过时间时，如果电池的电位大于充电水平，则电池首先放电然后充电; 否则，电池将被直接充电。

公开(公告)号：US06974749B2

公开(公告)日：2005-12-13

申请号：US10677568

申请日：2003-10-01

Applicant: Shih-Chi Lai ,  Yifu Chung ,  Yi-Chuan Yang ,  Jen-Chieh Chang ,  Jason Chien-Sung Chu ,  Chun-De Lin

Inventor： Shih-Chi Lai ,  Yifu Chung ,  Yi-Chuan Yang ,  Jen-Chieh Chang ,  Jason Chien-Sung Chu ,  Chun-De Lin

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/336

CPC classification number: H01L21/763 ,  H01L21/76224 ,  H01L29/42368 ,  H01L29/66734

Abstract: Embodiments of the present invention are directed to a method of forming a bottom oxide layer in the trench in semiconductor devices, such as Double-Diffused Metal-Oxide Semiconductor (DMOS) devices. In one embodiment, a method of forming a bottom oxide layer in a trench structure comprises providing a semiconductor substrate; forming a silicon nitride layer on the semiconductor substrate; forming a first oxide layer on the silicon nitride layer; forming a trench structure in the semiconductor substrate; forming a second oxide layer on a bottom and sidewalls of the trench and on a surface of the first oxide layer; removing the first oxide layer and the second oxide layer on the surface of the silicon nitride layer; and removing the second oxide layer on the sidewalls of the trench and a portion of the second oxide layer on the bottom of the trench.

Abstract translation: 本发明的实施例涉及在诸如双扩散金属氧化物半导体（DMOS）器件的半导体器件中的沟槽中形成底部氧化物层的方法。 在一个实施例中，在沟槽结构中形成底部氧化物层的方法包括提供半导体衬底; 在所述半导体衬底上形成氮化硅层; 在所述氮化硅层上形成第一氧化物层; 在所述半导体衬底中形成沟槽结构; 在所述沟槽的底部和侧壁上以及所述第一氧化物层的表面上形成第二氧化物层; 去除氮化硅层表面上的第一氧化物层和第二氧化物层; 并且去除沟槽的侧壁上的第二氧化物层和沟槽底部上的第二氧化物层的一部分。

公开(公告)号：US20090119424A1

公开(公告)日：2009-05-07

申请号：US12041671

申请日：2008-03-04

Applicant: Ming-Feng Liu ,  Chun-De Lin

Inventor： Ming-Feng Liu ,  Chun-De Lin

IPC: G06F3/00

CPC classification number: G06F12/0246 ,  G06F2212/7203

Abstract: A method for storing data is disclosed. The method is used for storing data into a program memory used for storing program codes. The program memory is divided into a first buffer storage area and a second buffer storage area. By alternate accessing of the first buffer storage area and the second buffer storage area, instantly accessible data can be stored in the program memory, such that the conventional data memory can be replaced by the program memory of the present invention and the cost of the product can be reduced.

Abstract translation: 公开了一种用于存储数据的方法。 该方法用于将数据存储到用于存储程序代码的程序存储器中。 程序存储器分为第一缓冲存储区和第二缓冲存储区。 通过交替访问第一缓冲存储区域和第二缓冲存储区域，即时可访问的数据可以被存储在程序存储器中，使得传统的数据存储器可以由本发明的程序存储器代替并且产品的成本 可以减少

公开(公告)号：US20060259557A1

公开(公告)日：2006-11-16

申请号：US11161306

申请日：2005-07-29

Applicant: Chun-De Lin ,  Yi-Hung Shen

Inventor： Chun-De Lin ,  Yi-Hung Shen

IPC: G06F15/16

CPC classification number: G06Q10/107

Abstract: A method for controlling outgoing electronic mails is disclosed. The method automatically checks whether the inputted mailing address is one among a list of predetermined mailing addresses obtained by means of providing users with a new field for entering mailing addresses or clicking a predetermined button after entering mailing addresses. This prevents the need to exclude external mailing addresses or to re-enter mailing addresses and the disadvantage of incomplete information security due to deletion mistakes or omission.

Abstract translation: 公开了一种用于控制传出电子邮件的方法。 该方法通过在输入邮寄地址之后通过向用户提供用于输入邮寄地址的新字段或点击预定按钮而获得的预定邮寄地址的列表中，输入的邮寄地址是否是一个。 这样就不需要排除外部邮寄地址或重新输入邮寄地址，而且由于删除错误或省略而导致不完整的信息安全的缺点。