公开(公告)号：US06812148B2

公开(公告)日：2004-11-02

申请号：US10219094

申请日：2002-08-13

Applicant: Chieh-Ju Chang ,  Tsai-Sen Lin ,  Chon-Shin Jou ,  Yifu Chung

Inventor： Chieh-Ju Chang ,  Tsai-Sen Lin ,  Chon-Shin Jou ,  Yifu Chung

IPC: H01L21311

CPC classification number: H01L21/28238 ,  C23C8/02 ,  C23C8/10 ,  C23C8/80 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/7621 ,  H01L29/518

Abstract: Embodiments of the present invention relate to a method for preventing gate oxide thinning in a recess LOCOS process. The plurality of trenches are separated by a patterned pad oxide and a patterned silicon nitride layer The patterned silicon nitride layer and the patterned pad oxide layer are removed to expose a surface of the substrate as an active area of the semiconductor device. An ion drive-in to the active area on the substrate is performed by directing a flow of oxygen and nitrogen toward the substrate at a predetermined temperature and with a sufficient amount of oxygen to at least substantially prevent silicon nitride from forming on the field oxide regions. The method further comprises forming a sacrificial oxide layer on the active area, removing the sacrificial oxide layer to expose the active area, and forming a gate oxide layer on the active area.

Abstract translation: 本发明的实施例涉及一种用于在凹槽LOCOS工艺中防止栅极氧化物稀化的方法。 多个沟槽由图案化的衬垫氧化物和图案化的氮化硅层分离。去除图案化的氮化硅层和图案化衬垫氧化物层，以暴露衬底的表面作为半导体器件的有效区域。 在衬底上的有源区域中的离子驱动通过在预定温度和足够量的氧气下引导氧和氮流向衬底来进行，以至少基本上防止在场氧化物区域上形成氮化硅 。 该方法还包括在有源区上形成牺牲氧化物层，去除牺牲氧化物层以暴露有源区，以及在有源区上形成栅极氧化物层。