公开(公告)号：US07432188B2

公开(公告)日：2008-10-07

申请号：US11601684

申请日：2006-11-20

申请人： Chi-Long Tsai ,  Wan-Huei Lu

发明人： Chi-Long Tsai ,  Wan-Huei Lu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/02126 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014

摘要： A structure of bumps formed on an under bump metallurgy layer (UBM layer) and a method for making the same, wherein the structure includes a wafer, a UBM layer, a second photo resist and a bump. The wafer has a plurality of solder pads and a protection layer, and the protection layer covers the surface of the wafer and exposes parts of the solder pads. The UBM layer is disposed on the solder pads and the protection layers, and has an undercut structure. The second photo resist is disposed in the undercut structure. The bump is disposed on the UMB layer, so that the UMB layer will not react with the bump during a reflow process and the problem of stress concentration will be avoided so as to make the bump more stable.

摘要翻译： 在凸块状金属层（UBM层）上形成的凸块的结构及其制造方法，其中，所述结构包括晶片，UBM层，第二光刻胶和凸块。 晶片具有多个焊盘和保护层，并且保护层覆盖晶片的表面并暴露部分焊盘。 UBM层设置在焊盘和保护层上，并具有底切结构。 第二光刻胶设置在底切结构中。 凸块设置在UMB层上，使得UMB层在回流工艺期间不会与凸块反应，并且将避免应力集中的问题，以使凸块更稳定。

公开(公告)号：US20070134905A1

公开(公告)日：2007-06-14

申请号：US11637794

申请日：2006-12-13

申请人： Chi-Long Tsai ,  Wan-Huei Lu

发明人： Chi-Long Tsai ,  Wan-Huei Lu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/051 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/00014

摘要： The present invention relates to a method for mounting bumps on an under bump metallurgy layer (UBM layer). The method comprises (a) providing a wafer, having a plurality of solder pads and a protection layer, and the protection layer covering a surface of the wafer and exposing parts of the solder pads; (b) forming a first UBM layer on the solder pads and the protection layer; (c) forming a first photo resist on the first UBM layer, the first photo resist having a plurality of first openings corresponding to the exposing parts of the solder pads; (d) forming a second under bump metallurgy layer in the opening of the first photo resist; (e) forming a second photo resist on the first photo resist, the second photo resist having a plurality of second openings corresponding to the first openings of the first photo resist; (f)plating a solder layer in the first openings of the first photo resist and in the second openings of the second photo resist; (g) removing the second photo resist; (h) heating the solder layer to be a ball-shaped bump; (i) removing the first photo resist; and (j) removing part of the first UMB layer. Therefore, the UMB layer will not be reacted with bump in a reflow process and the problem of stress concentration will be avoided so as to make the bump more stable.

摘要翻译： 本发明涉及一种用于在凸块下的冶金层（UBM层）上安装凸块的方法。 该方法包括（a）提供具有多个焊盘和保护层的晶片，以及覆盖晶片表面并暴露焊盘部分的保护层; （b）在焊盘和保护层上形成第一UBM层; （c）在所述第一UBM层上形成第一光致抗蚀剂，所述第一光刻胶具有对应于所述焊盘的所述曝光部分的多个第一开口; （d）在第一光致抗蚀剂的开口中形成第二凸块下金属层; （e）在第一光致抗蚀剂上形成第二光致抗蚀剂，第二光致抗蚀剂具有对应于第一光致抗蚀剂的第一开口的多个第二开口; （f）在第一光致抗蚀剂的第一开口和第二光致抗蚀剂的第二开口中镀覆焊料层; （g）除去第二光致抗蚀剂; （h）将焊料层加热成球形凸块; （i）除去第一光致抗蚀剂; 和（j）去除第一UMB层的一部分。 因此，在回流工艺中，UMB层不会与凸起反应，并且将避免应力集中的问题，以使凸块更稳定。

公开(公告)号：US20070117368A1

公开(公告)日：2007-05-24

申请号：US11601684

申请日：2006-11-20

申请人： Chi-Long Tsai ,  Wan-Huei Lu

发明人： Chi-Long Tsai ,  Wan-Huei Lu

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/02126 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014

摘要： The present invention relates to a structure of bumps forming on an under bump metallurgy layer (UBM layer) and a method for making the same. The structure comprises a wafer, a UBM layer, a second photo resist and a bump. The wafer has a plurality of solder pads and a protection layer, and the protection layer covers the surface of the wafer and exposes parts of the solder pads. The UBM layer is disposed on the solder pads and the protection layer and has an undercut structure. The second photo resist is disposed in the undercut structure. The bump is disposed on the UMB layer. Whereby, the UMB layer will not be reacted with bump in a reflow process and the problem of stress concentration will be avoided so as to make the bump more stable.

摘要翻译： 本发明涉及在凸块下冶金层（UBM层）上形成的凸块的结构及其制造方法。 该结构包括晶片，UBM层，第二光致抗蚀剂和凸块。 晶片具有多个焊盘和保护层，并且保护层覆盖晶片的表面并暴露部分焊盘。 UBM层设置在焊盘和保护层上并具有底切结构。 第二光刻胶设置在底切结构中。 凸块设置在UMB层上。 因此，在回流工艺中，UMB层不会与凸起反应，并且将避免应力集中的问题，以使凸块更稳定。