公开(公告)号：US20070145500A1

公开(公告)日：2007-06-28

申请号：US11612647

申请日：2006-12-19

申请人： Chang Han

发明人： Chang Han

IPC分类号： H01L29/82

CPC分类号： H01L27/14603 ,  H01L27/1463

摘要： A CMOS image sensor capable of improving characteristics of the image sensor by preventing damage to a photodiode region and a method for manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate on which a device isolation region and an active region are defined; a photodiode region formed at the active region; a conductive plug formed on the photodiode region for connecting the photodiode region to a metal wiring; and a transistor formed enclosing the conductive plug.

摘要翻译： 提供了能够通过防止光电二极管区域的损坏来提高图像传感器的特性的CMOS图像传感器及其制造方法。 CMOS图像传感器包括：半导体衬底，其上限定了器件隔离区域和有源区域; 形成在有源区的光电二极管区; 形成在所述光电二极管区域上用于将所述光电二极管区域连接到金属布线的导电插塞; 以及形成围绕导电插塞的晶体管。

公开(公告)号：US20070145423A1

公开(公告)日：2007-06-28

申请号：US11612661

申请日：2006-12-19

申请人： Chang Han

发明人： Chang Han

IPC分类号： H01L27/148

CPC分类号： H01L27/14603 ,  H01L27/14689

摘要： A CMOS (complementary metal oxide semiconductor) image sensor and method of fabricating the same is provided. The CMOS image sensor can include: a semiconductor substrate in which an active region and a device isolation region are defined; a photodiode region including a first region and a second region extending from the first region formed on the active region, wherein impurity ions of a first conductivity type and impurity ions of a second conductivity type are implanted in the first region, and impurity ions of the first conductivity type are implanted in the second region; and a transistor and an impurity diffusion region of a first conductivity type formed on a transistor region of the active region.

摘要翻译： 提供CMOS（互补金属氧化物半导体）图像传感器及其制造方法。 CMOS图像传感器可以包括：半导体衬底，其中限定有源区和器件隔离区; 包括第一区域和从形成在有源区域上的第一区域延伸的第二区域的光电二极管区域，其中在第一区域中注入第一导电类型的杂质离子和第二导电类型的杂质离子， 第一导电类型被植入第二区域; 以及形成在有源区的晶体管区域上的第一导电类型的晶体管和杂质扩散区。

公开(公告)号：US20070012963A1

公开(公告)日：2007-01-18

申请号：US11486456

申请日：2006-07-13

申请人： Chang Han

发明人： Chang Han

IPC分类号： H01L31/113 ,  H01L21/00

CPC分类号： H01L27/14683 ,  H01L27/14603

摘要： Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.

摘要翻译： 公开了CMOS图像传感器及其制造方法。 该方法包括以下步骤：在半导体衬底上形成隔离层，限定包括光电二极管区域和晶体管区域的有源区域; 在所述晶体管区域中形成栅极，所述栅极包括栅极电极和栅极绝缘层; 在所述光电二极管区域中形成第一低浓度扩散区域; 在所述晶体管区域中形成第二低浓度扩散区域; 在所述衬底上形成缓冲层，所述缓冲层覆盖所述光电二极管区域; 在衬底的整个表面上形成第一和第二绝缘层，第一和第二绝缘层彼此具有不同的蚀刻选择性; 通过选择性地去除所述第二绝缘层在所述栅电极的侧面上形成绝缘侧壁; 从晶体管区域去除第一绝缘层; 在所述暴露的晶体管区域中形成高浓度扩散区域，部分地与所述第二低浓度扩散区域重叠; 在高浓度扩散区上形成金属硅化物层。

公开(公告)号：US20060258070A1

公开(公告)日：2006-11-16

申请号：US11432554

申请日：2006-05-12

申请人： Chang Han

发明人： Chang Han

IPC分类号： H01L29/08 ,  H01L21/338

CPC分类号： H01L51/055 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0545

摘要： An organic thin film transistor includes a dual gate electrode on a substrate, a gate insulating layer on the dual gate electrode, source and drain electrodes on the gate insulating layer, and an organic semiconductor layer on the source and drain electrodes.

公开(公告)号：US20060145209A1

公开(公告)日：2006-07-06

申请号：US11319591

申请日：2005-12-29

申请人： Chang Han

发明人： Chang Han

IPC分类号： H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： A photodiode of a CMOS image sensor and a method for manufacturing the same are provided, in which ions implanted in the vicinity of a device isolation film are prevented from being diffused into a photodiode region to reduce a dark current. The photodiode of a CMOS image sensor includes a heavily doped P-type semiconductor substrate, a lightly doped P-type epitaxial layer formed on the semiconductor substrate, a gate electrode formed on the epitaxial layer, a device isolation film and an N-type photodiode region formed in the epitaxial layer, an insulating film formed on the epitaxial layer to open a portion between the device isolation film and the photodiode region, and a heavily doped P-type diffusion region formed in the epitaxial layer between the device isolation film and the photodiode region.

摘要翻译： 提供CMOS图像传感器的光电二极管及其制造方法，其中防止注入到器件隔离膜附近的离子扩散到光电二极管区域以减少暗电流。 CMOS图像传感器的光电二极管包括重掺杂P型半导体衬底，形成在半导体衬底上的轻掺杂P型外延层，形成在外延层上的栅电极，器件隔离膜和N型光电二极管 形成在所述外延层中的绝缘膜，形成在所述外延层上以打开所述器件隔离膜和所述光电二极管区域之间的部分的绝缘膜，以及形成在所述器件隔离膜和所述光电二极管区域之间的外延层中的重掺杂P型扩散区域 光电二极管区域。

公开(公告)号：US20050064665A1

公开(公告)日：2005-03-24

申请号：US10746702

申请日：2003-12-24

申请人： Chang Han

发明人： Chang Han

IPC分类号： H01L27/146 ,  H01L21/336

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14643 ,  H01L31/035272

摘要： A method for manufacturing structures of a CMOS image sensor. The method comprises the steps of depositing a gate insulating layer and a conductive layer on a semiconductor substrate; depositing an ion implantation barrier layer on the conductive layer; patterning the deposited gate insulating layer, conductive layer and ion implantation barrier layer to form a patterned, composite gate insulating layer, gate electrode and ion implantation barrier structure; forming a second photosensitive layer pattern to define a photodiode region; and implanting low-concentration dopant ions into the substrate using the second photosensitive layer pattern as an ion implantation mask to form a low-concentration dopant region within the photodiode region.

摘要翻译： 一种用于制造CMOS图像传感器的结构的方法。 该方法包括以下步骤：在半导体衬底上沉积栅绝缘层和导电层; 在导电层上沉积离子注入阻挡层; 图案化沉积的栅极绝缘层，导电层和离子注入阻挡层，以形成图案化的复合栅极绝缘层，栅电极和离子注入阻挡结构; 形成第二感光层图案以限定光电二极管区域; 以及使用所述第二感光层图案作为离子注入掩模将低浓度掺杂剂离子注入到所述衬底中，以在所述光电二极管区域内形成低浓度掺杂剂区域。

公开(公告)号：US08735189B2

公开(公告)日：2014-05-27

申请号：US13474656

申请日：2012-05-17

申请人： Chang Han

发明人： Chang Han

IPC分类号： H01L21/00 ,  H01L21/50 ,  H01L21/48 ,  H01L29/267 ,  H01L31/12 ,  H01L29/22 ,  H01L31/0203 ,  H01L25/16 ,  H01L33/08 ,  H01L51/52

CPC分类号： H01L25/167 ,  H01L33/08 ,  H01L33/382 ,  H01L33/405 ,  H01L51/5237 ,  H01L51/5253 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A method of fabricating a light emitting diode device comprises providing a substrate, growing an epitaxial structure on the substrate. The epitaxial structure includes a first layer on the substrate, an active layer on the first layer and a second layer on the active layer. The method further comprises depositing a conductive and reflective layer on the epitaxial structure, forming a group of first trenches and a second trench. Each of the first and second trenches extends from surface of the conductive and reflective layer to the first layer to expose part of the first layer. The method further comprises depositing conductive material to cover a portion of the conductive and reflective layer to form a first contact pad, and cover surfaces between adjacent first trenches to form a second contact pad. The second contact pad electrically connects the first layer by filling the conductive material in the first trenches.

摘要翻译： 制造发光二极管器件的方法包括提供衬底，在衬底上生长外延结构。 外延结构包括在衬底上的第一层，第一层上的有源层和有源层上的第二层。 该方法还包括在外延结构上沉积导电和反射层，形成一组第一沟槽和第二沟槽。 第一和第二沟槽中的每一个从导电和反射层的表面延伸到第一层以暴露第一层的一部分。 该方法还包括沉积导电材料以覆盖导电层和反射层的一部分以形成第一接触焊盘，并覆盖相邻第一沟槽之间的表面以形成第二接触焊盘。 第二接触垫通过在第一沟槽中填充导电材料来电连接第一层。

公开(公告)号：US08698186B2

公开(公告)日：2014-04-15

申请号：US13186461

申请日：2011-07-19

申请人： Lac Nguyen ,  Chang Han

发明人： Lac Nguyen ,  Chang Han

IPC分类号： H01L33/62

CPC分类号： H05K1/0203 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/48091 ,  H05K1/0204 ,  H05K1/0306 ,  H05K1/05 ,  H05K2201/0385 ,  H05K2201/09045 ,  H05K2201/09054 ,  H05K2201/10106 ,  H05K2201/10416 ,  H05K2201/10969 ,  H01L2924/00014

摘要： An LED device with improved circuit board LED support structure is presented. A top surface of a thermally-conductive substrate of this LED device comprises a thermally-conductive pillar. The pillar is not covered with a dielectric layer and an LED package is arranged directly on the pillar with the LED packages bottom thermally-conductive plate in direct contact with the pillar top surface.

摘要翻译： 提出了一种具有改进的电路板LED支撑结构的LED器件。 该LED装置的导热基板的顶面包括导热柱。 柱子不被电介质层覆盖，并且LED封装直接布置在柱上，LED封装底部导热板与柱顶表面直接接触。

公开(公告)号：US20070148847A1

公开(公告)日：2007-06-28

申请号：US11613218

申请日：2006-12-20

申请人： Chang Han

发明人： Chang Han

IPC分类号： H01L21/8238

CPC分类号： H01L27/14603 ,  H01L27/14643 ,  H01L27/14689

摘要： A method of fabricating a CMOS image sensor is provided. According to an embodiment, a device isolation layer is formed in a semiconductor substrate to define a device isolation region and an active region. A gate insulating layer and a polysilicon layer are formed on the semiconductor substrate. Impurity ions are implanted at high concentration into the polysilicon layer. Then, the polysilicon layer and the gate insulating layer are selectively removed to form a gate electrode. Impurity ions are implanted into the active region to form a photodiode region. Impurity ions are implanted into the active region to form source/drain

摘要翻译： 提供一种制造CMOS图像传感器的方法。 根据实施例，在半导体衬底中形成器件隔离层以限定器件隔离区域和有源区域。 在半导体衬底上形成栅极绝缘层和多晶硅层。 杂质离子以高浓度注入到多晶硅层中。 然后，选择性地去除多晶硅层和栅极绝缘层以形成栅电极。 将杂质离子注入到有源区中以形成光电二极管区域。 将杂质离子注入有源区以形成源极/漏极

公开(公告)号：US20060275661A1

公开(公告)日：2006-12-07

申请号：US11435538

申请日：2006-05-17

申请人： Byoung Kim ,  Dong Ryu ,  Ju Kim ,  Chang Han ,  Eun Goh ,  Hyang Lee

发明人： Byoung Kim ,  Dong Ryu ,  Ju Kim ,  Chang Han ,  Eun Goh ,  Hyang Lee

IPC分类号： H01M4/62 ,  C08F220/06

CPC分类号： C08F220/18 ,  C08F212/08 ,  C08F222/04 ,  H01M2/1673 ,  H01M4/13 ,  H01M4/621 ,  H01M4/622 ,  H01M10/0413 ,  H01M10/0525 ,  H01M2300/0085

摘要： Disclosed is an electrochemical device, which comprises: (A) a binder comprising polymer particles obtained from the polymerization of: (a) 20-70 parts by weight of a (meth)acrylic acid ester monomer; (b) 20-60 parts by weight of a vinyl monomer; and (c) 0.01-30 parts by weight of an unsaturated carboxylic acid monomer, based on 100 parts by weight of a binder polymer; and (B) electrochemical cells stacked multiply by using the binder, wherein the binder allows electrode active material particles in an electrode to be fixed and interconnected among themselves and between the electrode active material and a collector, and the electrode and a separator that is in contact with the electrode are bonded to each other by way of hot fusion. The binder is also disclosed. The binder has excellent adhesion and thermal bonding characteristics, and thus is useful for an electrochemical device comprising multiply stacked electrochemical cells, and can improve the overall quality of a battery.

摘要翻译： 公开了一种电化学装置，其包括：（A）包含由以下聚合获得的聚合物颗粒的粘合剂：（a）20-70重量份的（甲基）丙烯酸酯单体; （b）20-60重量份的乙烯基单体; 和（c）基于100重量份的粘合剂聚合物，0.01-30重量份的不饱和羧酸单体; 和（B）通过使用粘合剂堆叠的电化学电池，其中粘合剂允许电极中的电极活性材料颗粒在它们之间以及电极活性材料和集电体之间固定和互连，并且电极和分离器 与电极的接触通过热熔接而彼此接合。 还公开了粘合剂。 粘合剂具有优异的粘合性和热粘合特性，因此可用于包括多层叠电化学电池的电化学装置，并且可以提高电池的整体质量。