LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY
    1.
    发明申请
    LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY 审中-公开
    LED结构与增强反射率

    公开(公告)号:US20140167065A1

    公开(公告)日:2014-06-19

    申请号:US14185589

    申请日:2014-02-20

    申请人: CREE, INC.

    IPC分类号: H01L33/60 H01L33/32 H01L33/08

    摘要: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror, such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip.

    摘要翻译: 本发明的实施例通常涉及通过减少与镜接触相邻的阻挡层的光吸收效果来改进总发射的LED芯片。 在一个实施例中,LED芯片包括一个或多个LED,其中每个LED具有有源区,在有源区下方的第一接触具有高反射镜,以及邻近反射镜的阻挡层。 阻挡层比镜子小,使得其不延伸超出反射镜的周边。 在另一个可能的实施例中,进一步提供绝缘体,其中绝缘体邻近阻挡层并且反射镜的相邻部分未被有源区域或阻挡层接触。 在另一个实施例中,在有源区上提供第二接触。 在另一个实施例中,阻挡层小于反射镜,使得反射镜的周边至少不含阻挡层40%,并且第二触点位于第一触点下方并且可从芯片的底部接近。

    Chip with integrated phosphor
    2.
    发明授权

    公开(公告)号:US10439107B2

    公开(公告)日:2019-10-08

    申请号:US14053404

    申请日:2013-10-14

    申请人: CREE, INC.

    摘要: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

    METHODS OF PERFORMING SEMICONDUCTOR GROWTH USING REUSABLE CARRIER SUBSTRATES AND RELATED CARRIER SUBSTRATES
    3.
    发明申请
    METHODS OF PERFORMING SEMICONDUCTOR GROWTH USING REUSABLE CARRIER SUBSTRATES AND RELATED CARRIER SUBSTRATES 审中-公开
    使用可重复载体基板和相关载体基板执行半导体生长的方法

    公开(公告)号:US20160189954A1

    公开(公告)日:2016-06-30

    申请号:US14587024

    申请日:2014-12-31

    申请人: Cree, Inc.

    摘要: Semiconductor devices are fabricated by providing a growth substrate having a thickness within a preselected range and then bonding a lower surface of the growth substrate to an upper surface of the carrier substrate to form a composite substrate. One or more semiconductor growth processes are performed at one or more growth temperatures of at least 500° C. to form one or more semiconductor layers on an upper surface of the composite substrate. The growth substrate is separated from the carrier substrate after the one or more semiconductor growth processes are completed so that the carrier substrate may be reused with a second growth substrate.

    摘要翻译: 通过提供具有预定范围内的厚度的生长衬底然后将生长衬底的下表面粘合到载体衬底的上表面以形成复合衬底来制造半导体器件。 在至少500℃的一个或多个生长温度下进行一个或多个半导体生长工艺,以在复合衬底的上表面上形成一个或多个半导体层。 在一个或多个半导体生长过程完成之后,将生长衬底与载体衬底分离,使得载体衬底可以与第二生长衬底重复使用。

    CHIP WITH INTEGRATED PHOSPHOR
    4.
    发明申请
    CHIP WITH INTEGRATED PHOSPHOR 审中-公开
    芯片与一体化磷

    公开(公告)号:US20140217443A1

    公开(公告)日:2014-08-07

    申请号:US14053404

    申请日:2013-10-14

    申请人: CREE, INC.

    IPC分类号: H01L33/50 H01L33/60

    摘要: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

    摘要翻译: 本公开涉及发光器件及其制造方法,包括侧面和/或多面发光器件。 根据本公开的实施例包括使用功能层,其可以包括与发光器的一个或多个部分的间隔距离,以在进一步的器件处理期间提高功能层的稳定性。 功能层可以进一步包括翼状部分,允许光发射器的下侧部分的涂覆进一步与发射的光和功能层上的反射层涂层相互作用,以进一步改善光提取和发光均匀性。 还公开了包括使用虚拟晶片结构的方法的制造方法。

    Light emitting diodes including current spreading layer and barrier sublayers
    6.
    发明授权
    Light emitting diodes including current spreading layer and barrier sublayers 有权
    包括电流扩散层和阻挡层的发光二极管

    公开(公告)号:US08907366B2

    公开(公告)日:2014-12-09

    申请号:US14067395

    申请日:2013-10-30

    申请人: Cree, Inc.

    摘要: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

    摘要翻译: 诸如发光二极管的半导体发光器件包括衬底,在衬底上的包括诸如发光二极管区域的发光区域的外延区域和包括电流扩展层的多层导电叠层,在外延区域上 。 阻挡层设置在电流扩散层上并在电流扩展层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。

    LIGHT EMITTING DIODES INCLUDING CURRENT SPREADING LAYER AND BARRIER SUBLAYERS
    7.
    发明申请
    LIGHT EMITTING DIODES INCLUDING CURRENT SPREADING LAYER AND BARRIER SUBLAYERS 有权
    发光二极体,包括电流传播层和障碍层

    公开(公告)号:US20140048822A1

    公开(公告)日:2014-02-20

    申请号:US14067395

    申请日:2013-10-30

    申请人: Cree, Inc.

    IPC分类号: H01L33/60 H01L33/32

    摘要: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

    摘要翻译: 诸如发光二极管的半导体发光器件包括衬底,在衬底上的包括诸如发光二极管区域的发光区域的外延区域和包括电流扩展层的多层导电叠层,在外延区域上 。 阻挡层设置在电流扩散层上并在电流扩展层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。

    SOLID STATE LAMP WITH LIGHT DIRECTING OPTICS AND DIFFUSER
    8.
    发明申请
    SOLID STATE LAMP WITH LIGHT DIRECTING OPTICS AND DIFFUSER 审中-公开
    具有光导向和透光的固态灯

    公开(公告)号:US20130214666A1

    公开(公告)日:2013-08-22

    申请号:US13758763

    申请日:2013-02-04

    申请人: CREE, INC.

    IPC分类号: F21V13/04 F21V29/00 F21V7/00

    摘要: Lamps and bulbs are disclosed generally comprising different combinations and arrangements of a light source, a reflective optical element, and a separate diffusing layer. This arrangement allows for the fabrication of lamps and bulbs that are efficient, reliable and cost effective and can provide an essentially omni-directional emission pattern, even with a light source comprised of an arrangement of LEDs. The lamps according to the present invention can also comprise thermal management features that provide for efficient dissipation of heat from the LEDs, which in turn allows the LEDs to operate at lower temperatures. The lamps can also comprise optical elements to help change the emission pattern from the generally directional pattern of the LEDs to a more omni-directional pattern.

    摘要翻译: 公开通常包括光源,反射光学元件和单独漫射层的不同组合和布置的灯和灯泡。 这种布置允许制造高效,可靠和成本有效的灯和灯泡,并且可以提供基本上全方位的发射图案,即使是由LED的布置组成的光源。 根据本发明的灯还可以包括热管理特征,其提供来自LED的热量的有效耗散,这又允许LED在较低温度下操作。 灯还可以包括光学元件,以帮助将发射图案从LED的大致定向图案改变为更全面的图案。

    LIGHT EMITTER COMPONENTS, SYSTEMS, AND RELATED METHODS
    10.
    发明申请
    LIGHT EMITTER COMPONENTS, SYSTEMS, AND RELATED METHODS 有权
    发光元件,系统和相关方法

    公开(公告)号:US20140268728A1

    公开(公告)日:2014-09-18

    申请号:US13838654

    申请日:2013-03-15

    申请人: CREE, INC.

    IPC分类号: F21K99/00

    摘要: Light emitter components, systems, and related methods having improved optical efficiency and a lower manufacturing cost are disclosed. In one aspect, a light emitter component can include a substrate having an elongated body and first and second ends. At least a first trace and a second trace can be provided on the substrate. In some aspects, the first trace can be disposed proximate the first end of the substrate and the second trace can be disposed proximate the second end of the substrate, with no other portion of the first trace or second trace being disposed between the first and second ends of the substrate. In some aspects, a string of LED chips can be provided on the substrate. The string of LED chips can be disposed between the first and second ends of the substrate. Angled traces, gaps and light emitter components can also be provided in some aspects.

    摘要翻译: 公开了具有改善的光学效率和较低制造成本的光发射器部件,系统和相关方法。 在一个方面,光发射器部件可以包括具有细长主体和第一和第二端的基板。 可以在衬底上提供至少第一迹线和第二迹线。 在一些方面,第一迹线可以设置在基板的第一端附近,并且第二迹线可以设置在基板的第二端附近,而第一迹线或第二迹线的其它部分没有设置在第一和第二迹线之间 基片的端部。 在一些方面,可以在衬底上提供一串LED芯片。 LED芯片串可以设置在基板的第一和第二端之间。 在某些方面也可以提供角度曲线,间隙和光发射器部件。