LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY
    1.
    发明申请
    LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY 审中-公开
    LED结构与增强反射率

    公开(公告)号:US20140167065A1

    公开(公告)日:2014-06-19

    申请号:US14185589

    申请日:2014-02-20

    申请人: CREE, INC.

    IPC分类号: H01L33/60 H01L33/32 H01L33/08

    摘要: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror, such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip.

    摘要翻译: 本发明的实施例通常涉及通过减少与镜接触相邻的阻挡层的光吸收效果来改进总发射的LED芯片。 在一个实施例中,LED芯片包括一个或多个LED,其中每个LED具有有源区,在有源区下方的第一接触具有高反射镜,以及邻近反射镜的阻挡层。 阻挡层比镜子小,使得其不延伸超出反射镜的周边。 在另一个可能的实施例中,进一步提供绝缘体,其中绝缘体邻近阻挡层并且反射镜的相邻部分未被有源区域或阻挡层接触。 在另一个实施例中,在有源区上提供第二接触。 在另一个实施例中,阻挡层小于反射镜,使得反射镜的周边至少不含阻挡层40%,并且第二触点位于第一触点下方并且可从芯片的底部接近。