公开(公告)号：US20130252386A1

公开(公告)日：2013-09-26

申请号：US13892530

申请日：2013-05-13

申请人： Cree, Inc.

发明人： Scott T. Sheppard ,  Andrew K. Mackenzie ,  Scott T. Allen ,  Richard P. Smith

IPC分类号： H01L29/66

CPC分类号： H01L29/66431 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/802 ,  H01L2924/13064

摘要： A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.

摘要翻译： III型氮化物场效应晶体管，特别是HEMT，包括沟道层，沟道层上的势垒层，覆盖层上的蚀刻停止层，蚀刻停止层上的介电层，延伸到 阻挡层和栅极接触。 蚀刻停止层可以通过不将阻挡层暴露于干蚀刻来减少与形成凹陷栅的相关的损伤。 去除凹槽中的蚀刻停止层，剩余的蚀刻停止层用作钝化层。

公开(公告)号：US09142636B2

公开(公告)日：2015-09-22

申请号：US13892530

申请日：2013-05-13

申请人： Cree, Inc.

发明人： Scott T. Sheppard ,  Andrew K. Mackenzie ,  Scott T. Allen ,  Richard P. Smith

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/80 ,  H01L29/43 ,  H01L29/423 ,  H01L29/20

CPC分类号： H01L29/66431 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/802 ,  H01L2924/13064

摘要： A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.

摘要翻译： III型氮化物场效应晶体管，特别是HEMT，包括沟道层，沟道层上的势垒层，覆盖层上的蚀刻停止层，蚀刻停止层上的介电层，延伸到 阻挡层和栅极接触。 蚀刻停止层可以通过不将阻挡层暴露于干蚀刻来减少与形成凹陷栅的相关的损伤。 去除凹槽中的蚀刻停止层，剩余的蚀刻停止层用作钝化层。

公开(公告)号：US08907366B2

公开(公告)日：2014-12-09

申请号：US14067395

申请日：2013-10-30

申请人： Cree, Inc.

发明人： David B. Slater, Jr. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

IPC分类号： H01L33/00 ,  H01L33/60 ,  H01L33/32 ,  H01L33/44 ,  H01L33/40 ,  H01L33/62 ,  H01L33/20

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/01057 ,  H01L2924/12041 ,  H01L2924/00

摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和包括电流扩展层的多层导电叠层，在外延区域上 。 阻挡层设置在电流扩散层上并在电流扩展层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。

公开(公告)号：US20140048822A1

公开(公告)日：2014-02-20

申请号：US14067395

申请日：2013-10-30

申请人： Cree, Inc.

发明人： David B. Slater, JR. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

IPC分类号： H01L33/60 ,  H01L33/32

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/01057 ,  H01L2924/12041 ,  H01L2924/00

摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和包括电流扩展层的多层导电叠层，在外延区域上 。 阻挡层设置在电流扩散层上并在电流扩展层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。