公开(公告)号：US11282714B2

公开(公告)日：2022-03-22

申请号：US16316128

申请日：2017-05-31

申请人： CENTRAL GLASS COMPANY, LIMITED ,  TOKYO ELECTRON LIMITED

发明人： Akifumi Yao ,  Kunihiro Yamauchi ,  Tatsuo Miyazaki ,  Jun Lin ,  Susumu Yamauchi ,  Kazuaki Nishimura

IPC分类号： H01L21/321 ,  H01L21/3213 ,  H01L21/67

摘要： The etching method of the present invention includes the step of supplying a first mixed gas containing a β-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a β-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

公开(公告)号：US11335573B2

公开(公告)日：2022-05-17

申请号：US16461448

申请日：2017-12-20

申请人： Central Glass Company, Limited

发明人： Kunihiro Yamauchi ,  Takashi Masuda ,  Akifumi Yao

IPC分类号： H01L21/67 ,  C23F1/12 ,  C23F4/02 ,  H01L21/302 ,  H01L21/3213

摘要： Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a β-diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the β-diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the β-diketone. It is preferable that the β-diketone used for the dry etching method is supplied from a β-diketone filled container, wherein the β-diketone filled container has a sealed container body filled with a β-diketone whose water content is 15 mass ppm or less relative to the β-diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

公开(公告)号：US10957554B2

公开(公告)日：2021-03-23

申请号：US16461600

申请日：2017-12-20

申请人： Central Glass Company, Limited

发明人： Kunihiro Yamauchi ,  Takashi Masuda ,  Akifumi Yao

IPC分类号： H01L21/311 ,  C23F1/12 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/02

摘要： Disclosed is a dry etching method for etching a metal film on a substrate with the use of an etching gas, wherein the etching gas contains a β-diketone and first and second additive gases; wherein the metal film contains a metal element capable of forming a complex with the β-diketone; wherein the first additive gas is at least one kind of gas selected from the group consisting of NO, NO2, O2 and O3; wherein the second additive gas is at least one kind of gas selected from the group consisting of H2O and H2O2; wherein the amount of the β-diketone contained is 10 vol % to 90 vol % relative to the etching gas; and wherein the amount of the second additive gas contained is 0.1 vol % to 15 vol % relative to the etching gas. The etching rate of the metal film is increased by this etching method.

公开(公告)号：US11618954B2

公开(公告)日：2023-04-04

申请号：US17434898

申请日：2020-02-19

申请人： CENTRAL GLASS COMPANY, LIMITED

发明人： Yuuta Takeda ,  Kunihiro Yamauchi ,  Akifumi Yao

IPC分类号： C23F4/00 ,  C23F1/12 ,  H01L21/302 ,  H01L21/3213 ,  H01L21/311 ,  C23F1/00 ,  H01L21/02

摘要： The dry etching method of the present invention etches a metal film formed on a surface of a workpiece by bringing etching gases each containing a β-diketone into contact with the metal film. The method includes: a first etching step of bringing a first etching gas containing a first β-diketone into contact with the metal film; and a second etching step of bringing a second etching gas containing a second β-diketone into contact with the metal film after the first etching step. The first β-diketone is a compound capable of forming a first complex through a reaction with the metal film. The second β-diketone is a compound capable of forming a second complex having a lower sublimation point than the first complex through a reaction with the metal film.

公开(公告)号：US10460946B2

公开(公告)日：2019-10-29

申请号：US15744401

申请日：2016-06-07

申请人： TOKYO ELECTRON LIMITED ,  CENTRAL GLASS CO., LTD.

发明人： Jun Lin ,  Koji Takeya ,  Shinichi Kawaguchi ,  Mitsuhiro Tachibana ,  Akifumi Yao ,  Kunihiro Yamauchi

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

摘要： A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is β-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

公开(公告)号：US09991138B2

公开(公告)日：2018-06-05

申请号：US15219096

申请日：2016-07-25

申请人： Tokyo Electron Limited ,  CENTRAL GLASS CO., LTD.

发明人： Jun Lin ,  Koji Takeya ,  Mitsuhiro Tachibana ,  Akifumi Yao ,  Kunihiro Yamauchi ,  Tatsuo Miyazaki

IPC分类号： H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3065 ,  H05K3/02 ,  H01L23/532

CPC分类号： H01L21/67069 ,  C23F1/12 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136 ,  H01L23/53209 ,  H01L2924/01027 ,  H05K3/02 ,  H05K2203/0315

摘要： An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing β-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.