Invention Grant
- Patent Title: Etching method and etching apparatus
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Application No.: US15219096Application Date: 2016-07-25
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Publication No.: US09991138B2Publication Date: 2018-06-05
- Inventor: Jun Lin , Koji Takeya , Mitsuhiro Tachibana , Akifumi Yao , Kunihiro Yamauchi , Tatsuo Miyazaki
- Applicant: Tokyo Electron Limited , CENTRAL GLASS CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2015-147846 20150727
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/3213 ; H01L21/311 ; H01L21/3065 ; H05K3/02 ; H01L23/532

Abstract:
An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing β-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.
Public/Granted literature
- US20170032990A1 ETCHING METHOD AND ETCHING APPARATUS Public/Granted day:2017-02-02
Information query
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