公开(公告)号：US11335573B2

公开(公告)日：2022-05-17

申请号：US16461448

申请日：2017-12-20

Applicant: Central Glass Company, Limited

Inventor： Kunihiro Yamauchi ,  Takashi Masuda ,  Akifumi Yao

IPC: H01L21/67 ,  C23F1/12 ,  C23F4/02 ,  H01L21/302 ,  H01L21/3213

Abstract: Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a β-diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the β-diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the β-diketone. It is preferable that the β-diketone used for the dry etching method is supplied from a β-diketone filled container, wherein the β-diketone filled container has a sealed container body filled with a β-diketone whose water content is 15 mass ppm or less relative to the β-diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

公开(公告)号：US09409843B2

公开(公告)日：2016-08-09

申请号：US14783706

申请日：2014-04-02

Applicant: Central Glass Company, Limited

Inventor： Takashi Ootsuka ,  Takashi Masuda ,  Akihiro Ishii ,  Mari Imamura ,  Shunsuke Mimura ,  Masato Kimura ,  Hiroshi Minesaki

IPC: C07C45/26 ,  C07C33/00 ,  C07C43/00 ,  C07C49/167 ,  C07C49/227 ,  C07C45/45 ,  C07C33/42 ,  C07C43/178

CPC classification number: C07C45/26 ,  C07C33/426 ,  C07C43/1786 ,  C07C45/45 ,  C07C49/167 ,  C07C49/227

Abstract: A production method of a 1,1,1,5,5,5-hexafluoroacetylacetone hydrate according to the present invention includes: step 1: step 1: obtaining a reaction mixture that contains at least 1,1,1,5,5,5-hexafluoro-3-pentyn-2-one or an equivalent thereof by reaction of a 3,3,3-trifluoropropynyl metal with a trifluoroacetate; and step 2: forming the 1,1,1,5,5,5-hexafluoroacetylacetone hydrate by contact of the reaction mixture obtained in the step 1 with water in the presence of an acid. It is possible to produce 1,1,1,5,5,5-hexafluoroacetylacetone by dehydration of the thus-formed hydrate. Thus, the production method according to the present invention is industrially applicable.

Abstract translation: 根据本发明的1,1,1,5,5,5-六氟乙酰丙酮水合物的制备方法包括：步骤1：步骤1：获得含有至少1,1,1,5,5， 通过3,3,3-三氟丙炔基金属与三氟乙酸盐的反应可以得到5-六氟-3-戊炔-2-酮或其等同物; 和步骤2：通过在步骤1中获得的反应混合物与水在酸的存在下接触形成1,1,1,5,5,5-六氟乙酰丙酮水合物。 可以通过如此形成的水合物的脱水制备1,1,1,5,5,5-六氟乙酰丙酮。 因此，本发明的制造方法在工业上是适用的。

公开(公告)号：US12006096B2

公开(公告)日：2024-06-11

申请号：US17595627

申请日：2020-04-22

Applicant: Central Glass Company, Limited

Inventor： Kenta Watanabe ,  Takashi Masuda ,  Kazuki Tanaka

IPC: B65D85/84 ,  B65D23/02

CPC classification number: B65D23/02 ,  B65D85/84

Abstract: The present disclosure provides a β-diketone storage container including: a metal storage container to which a liquid β-diketone is charged, the metal being an aluminum material; and an inorganic film on an inner surface of the storage container, the inorganic film containing at least one material selected from the group consisting of silicon dioxide, silicon carbonitride, silicon carbide, silicon nitride, diamond, and diamond-like carbon.

公开(公告)号：US10957554B2

公开(公告)日：2021-03-23

申请号：US16461600

申请日：2017-12-20

Applicant: Central Glass Company, Limited

Inventor： Kunihiro Yamauchi ,  Takashi Masuda ,  Akifumi Yao

IPC: H01L21/311 ,  C23F1/12 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/02

Abstract: Disclosed is a dry etching method for etching a metal film on a substrate with the use of an etching gas, wherein the etching gas contains a β-diketone and first and second additive gases; wherein the metal film contains a metal element capable of forming a complex with the β-diketone; wherein the first additive gas is at least one kind of gas selected from the group consisting of NO, NO2, O2 and O3; wherein the second additive gas is at least one kind of gas selected from the group consisting of H2O and H2O2; wherein the amount of the β-diketone contained is 10 vol % to 90 vol % relative to the etching gas; and wherein the amount of the second additive gas contained is 0.1 vol % to 15 vol % relative to the etching gas. The etching rate of the metal film is increased by this etching method.