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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220415960A1

    公开(公告)日：2022-12-29

    申请号：US17840926

    申请日：2022-06-15

    申请人： CANON KABUSHIKI KAISHA

    发明人： Ayako Furesawa ,  Yoshinori Tateishi ,  Toshio Tomiyoshi ,  Takahiro Hachisu

    IPC分类号： H01L27/146

    摘要： A disclosed method of manufacturing a semiconductor device includes singulating a bonded substrate including a first substrate provided with an interconnection structure layer and a first bonding layer and a second substrate provided with a second bonding layer opposed to the first bonding layer into a plurality of semiconductor devices. The bonded substrate includes functional element regions and a scribe region in a plan view. The singulating includes forming a groove in the scribe region, and cutting the bonded substrate in a region outside an inner side surface of the groove. The groove is formed penetrating one of the first substrate and the second substrate, the interconnection structure layer, and the first and second bonding layers. The groove extends from the one of the first substrate and the second substrate to a position deeper than all interconnection layers provided between the first and second substrates.

    Method of manufacturing semiconductor device
    2.
    发明授权
    Method of manufacturing semiconductor device 有权

    公开(公告)号：US10424548B2

    公开(公告)日：2019-09-24

    申请号：US15711589

    申请日：2017-09-21

    申请人： CANON KABUSHIKI KAISHA

    发明人： Yuichi Kazue ,  Takahiro Hachisu ,  Hidemasa Oshige

    IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L21/683 ,  H01L21/768 ,  H01L21/78 ,  H01L23/48 ,  H01L23/544

    摘要： According to one aspect of the present invention, a method of manufacturing a semiconductor device is provided, which includes a bonding step bonding a semiconductor substrate having a semiconductor element disposed on a first surface, to a support substrate, at least through an adhesive layer between the semiconductor substrate and the support substrate, and a groove forming step forming a groove in a scribe area of the semiconductor substrate, from a side of a second surface of the semiconductor substrate, the second surface being opposite to the first surface, and in the groove forming step, a conductive layer between the semiconductor substrate and the support substrate is exposed at a bottom of the groove, without the adhesive layer being exposed in the groove.

    Semiconductor apparatus and camera
    4.
    发明授权
    Semiconductor apparatus and camera 有权

    公开(公告)号：US10916578B2

    公开(公告)日：2021-02-09

    申请号：US16265044

    申请日：2019-02-01

    申请人： CANON KABUSHIKI KAISHA

    发明人： Takahiro Hachisu

    IPC分类号： H01L31/0203 ,  H01L27/146 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48

    摘要： A semiconductor apparatus in which are bonded a semiconductor substrate, in which a semiconductor element is arranged, and a supporting substrate is provided. A bonding layer for bonding the semiconductor substrate and the supporting substrate is arranged between the supporting substrate and a front side of the semiconductor substrate on the side of the supporting substrate. The bonding layer includes a first resin member arranged in a first region inside of an outer edge of the semiconductor substrate in an orthographic projection to the front side, and a second resin member arranged in a second region between the outer edge of the semiconductor substrate and the first region, in the orthographic projection to the front side. A linear expansion coefficient of the first resin member is less than a linear expansion coefficient of the second resin member.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180090453A1

    公开(公告)日：2018-03-29

    申请号：US15711589

    申请日：2017-09-21

    申请人： CANON KABUSHIKI KAISHA

    发明人： Yuichi Kazue ,  Takahiro Hachisu ,  Hidemasa Oshige

    IPC分类号： H01L23/00 ,  H01L21/683 ,  H01L21/768 ,  H01L21/78 ,  H01L21/02 ,  H01L23/48 ,  H01L23/544

    摘要： According to one aspect of the present invention, a method of manufacturing a semiconductor device is provided, which includes a bonding step bonding a semiconductor substrate having a semiconductor element disposed on a first surface, to a support substrate, at least through an adhesive layer between the semiconductor substrate and the support substrate, and a groove forming step forming a groove in a scribe area of the semiconductor substrate, from a side of a second surface of the semiconductor substrate, the second surface being opposite to the first surface, and in the groove forming step, a conductive layer between the semiconductor substrate and the support substrate is exposed at a bottom of the groove, without the adhesive layer being exposed in the groove.

    SEMICONDUCTOR APPARATUS, CAMERA, AND METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS
    8.
    发明申请
    SEMICONDUCTOR APPARATUS, CAMERA, AND METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS 审中-公开

    公开(公告)号：US20190252327A1

    公开(公告)日：2019-08-15

    申请号：US16265044

    申请日：2019-02-01

    申请人： CANON KABUSHIKI KAISHA

    发明人： Takahiro Hachisu

    IPC分类号： H01L23/00 ,  H01L27/146

    CPC分类号： H01L23/562 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14687

    摘要： A semiconductor apparatus in which are bonded a semiconductor substrate, in which a semiconductor element is arranged, and a supporting substrate is provided. A bonding layer for bonding the semiconductor substrate and the supporting substrate is arranged between the supporting substrate and a front side of the semiconductor substrate on the side of the supporting substrate. The bonding layer includes a first resin member arranged in a first region inside of an outer edge of the semiconductor substrate in an orthographic projection to the front side, and a second resin member arranged in a second region between the outer edge of the semiconductor substrate and the first region, in the orthographic projection to the front side. A linear expansion coefficient of the first resin member is less than a linear expansion coefficient of the second resin member.