摘要:
Provided is a biochip including a high-sensitivity image sensor. The biochip includes: a biochip layer including a plurality of reaction zones in which biochemical reactions occur formed as concaves, the reaction zone including a reference material at a lower portion and a target material at an upper portion; and an image sensor layer which is formed below the biochip layer and includes a plurality of photo detectors. Since the biochip is implemented as a single chip including the biochip layer and the image sensor layer, light loss in the luminescence or fluorescence operation can be reduced. In addition, additional devices such as a scanner which are needed for a general biochip are not needed, so that sensitivity is improved, and low-cost biochips can be implemented.
摘要:
A phototransistor used for an image sensor is provided. The phototransistor can reduce a dark current that occurs in the phototransistor and improve sensitivity at low luminance without crosstalk with a neighboring pixel or an image lag by including a buried collector. In the phototransistor including the buried collector, since the collector is not directly connected to outside, the phototransistor has a low dark current and a high photosensitive characteristic at low luminance. Since each image sensor is isolated, crosstalk between pixels or an image lag does not occur.
摘要:
There is provided an image sensor with a spectrum sensor including an image sensor region having a plurality of light-detection parts and a spectrum sensor region located in the image sensor region. The present invention provides an advantage of manufacturing a low-cost image sensor with a spectrum sensor. Thus, the image sensor with a spectrum sensor is commercially available to measure the structure and quantity of an organic material in an object in a simple manner.
摘要:
A phototransistor used for an image sensor is provided. The phototransistor can reduce a dark current that occurs in the phototransistor and improve sensitivity at low luminance without crosstalk with a neighboring pixel or an image lag by including a buried collector. In the phototransistor including the buried collector, since the collector is not directly connected to outside, the phototransistor has a low dark current and a high photosensitive characteristic at low luminance. Since each image sensor is isolated, crosstalk between pixels or an image lag does not occur.
摘要:
A system for recognizing a text image in an image photographed by an image sensor as characters, searching the characters in an electronic dictionary, and displaying a search result on a window. The image sensor includes a photographing section configured to photograph an image; a determination section configured to determine the photographed image as at least one of a text image region and a non-text image region; and a conversion section configured to convert information of the determined text image region into binary information.
摘要:
Provided is a one-chip vitality measuring image sensor. The image sensor includes one chip where a plurality of IR pixels and a plurality of visible pixels are alternately disposed, IR pass filters which are disposed on the IR pixels, and color pass filters which are disposed on the visible pixels. In the image sensor, IR strength and color strengths are obtained from light which is incident to the IR pixels and the visible pixels, and a vitality of a subject is measured by comparing the IR strength with the color strengths.
摘要:
A diagnosis device using an image sensor and a method of manufacturing the same are provided. The diagnosis device using the image sensor includes: a substrate in which an image sensor including a plurality of optical sensors is formed; an insulation layer formed on the substrate; and a plurality of wells formed in the insulation layer in correspondence with the plurality of optical sensors, the plurality of wells into which reference samples for biochemical reactions with a target sample are inserted.
摘要:
Provided is a stacked image sensor. Particularly, provided are a stacked image sensor including a photosensitive element portion having a photo-conductive thin film on an upper portion of a wafer where a peripheral circuit is formed and a method of manufacturing the stacked image sensor. In the stacked image sensor according to the present invention, since a wafer where a circuit is formed and a photosensitive element portion are formed in a stacked structure, a whole size of the image sensor can be reduced, and there is no optical crosstalk due to absorption of incident light to adjacent pixels. In addition, since a photo-conductive element having a high light absorbance is used, a high photo-electric conversion efficiency can be obtained. In addition, in the method of manufacturing a stacked image sensor according to the present invention, since the upper photosensitive element can be formed by using a simple low-temperature process, a production cost can be reduced.
摘要:
Provided are a crystalline solar cell having a stacked structure capable of increasing light absorption efficiency and preventing deterioration in a semiconductor and a method of manufacturing the crystalline solar cell. The crystalline solar cell having a stacked structure includes a non-conductive lattice buffer layer which is made of a non-conductive material and formed between crystalline solar cell layers, wherein the non-conductive lattice buffer layer electrically connects the solar cell layers to each other by a tunneling effect. The method of manufacturing the crystalline solar cell includes steps of forming a crystalline first solar cell layer, forming a non-conductive lattice buffer layer using a non-conductive material on the first solar cell layer, and forming a crystalline second solar cell layer on the non-conductive lattice buffer layer.
摘要:
Provided is an apparatus for continuously fabricating superconducting tapes. An evaporation using drum in dual chamber (EDDC) method is suitable for mass production of high-temperature superconducting tapes. However, the EDDC method is limited to fabrication of high-temperature superconducting tapes having a limited length. In an attempt, high-temperature super-conducting tapes having a sufficiently large length can be fabricated using the EDDC method by releasing a long high-temperature superconducting tape from one reel and winding the long high-temperature superconducting tape around the other reel. In this case, it is important to stably move a high-temperature superconducting tape spirally wound around a drum from one reel to the other reel. Therefore, the provided apparatus uses endless tract belts separately disposed around a drum to stably and continuously move a high-temperature superconducting tape spirally wound around the drum along the centerline of the drum from one reel to the other reel.