Invention Grant
- Patent Title: Phototransistor having a buried collector
- Patent Title (中): 具有埋地收集器的光电晶体管
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Application No.: US12599309Application Date: 2008-05-07
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Publication No.: US08368164B2Publication Date: 2013-02-05
- Inventor: Byoung-Su Lee
- Applicant: Byoung-Su Lee
- Applicant Address: KR Seoul
- Assignee: Siliconfile Technologies Inc.
- Current Assignee: Siliconfile Technologies Inc.
- Current Assignee Address: KR Seoul
- Agency: Kile Park Goekjian Reed & McManus PLLC
- Priority: KR10-2007-0049701 20070522
- International Application: PCT/KR2008/002548 WO 20080507
- International Announcement: WO2008/143413 WO 20081127
- Main IPC: H01L31/10
- IPC: H01L31/10

Abstract:
A phototransistor used for an image sensor is provided. The phototransistor can reduce a dark current that occurs in the phototransistor and improve sensitivity at low luminance without crosstalk with a neighboring pixel or an image lag by including a buried collector. In the phototransistor including the buried collector, since the collector is not directly connected to outside, the phototransistor has a low dark current and a high photosensitive characteristic at low luminance. Since each image sensor is isolated, crosstalk between pixels or an image lag does not occur.
Public/Granted literature
- US20100237455A1 PHOTOTRANSISTOR HAVING A BURIED COLLECTOR Public/Granted day:2010-09-23
Information query
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