-
公开(公告)号：US07504198B2
公开(公告)日：2009-03-17
申请号：US11439847
申请日：2006-05-24
CPC分类号： G03F7/0382 , G03F7/0392 , G03F7/2022 , Y10S430/145 , Y10S430/146
摘要： Methods are provided for enhancing resolution of a chemically amplified photoresist. A film comprising a photoacid generator and a polymer comprising functional groups bonded to protecting moieties is deposited on a substrate. The film is exposed to patterned radiation. The patterned radiation results in protonation of a portion of the functional groups and the formation of a latent image within the film. The bonds between the protonated functional groups and the protecting moieties are selectively excited with non-thermal energy having a wavelength spectrum that resonantly cleaves the bonds.
摘要翻译： 为提高化学放大光致抗蚀剂的分辨率提供了方法。 包含光酸产生剂和包含与保护部分键合的官能团的聚合物的膜沉积在基材上。 该膜暴露于图案化的辐射。 图案化的辐射导致一部分官能团的质子化和膜内的潜像的形成。 质子化官能团与保护部分之间的键被选择性地用具有共振地切断键的波长谱的非热能激发。
-
公开(公告)号：US20070275321A1
公开(公告)日：2007-11-29
申请号：US11439847
申请日：2006-05-24
IPC分类号： G03C1/00
CPC分类号： G03F7/0382 , G03F7/0392 , G03F7/2022 , Y10S430/145 , Y10S430/146
摘要： Methods are provided for enhancing resolution of a chemically amplified photoresist. A film comprising a photoacid generator and a polymer comprising functional groups bonded to protecting moieties is deposited on a substrate. The film is exposed to patterned radiation. The patterned radiation results in protonation of a portion of the functional groups and the formation of a latent image within the film. The bonds between the protonated functional groups and the protecting moieties are selectively excited with non-thermal energy having a wavelength spectrum that resonantly cleaves the bonds.
摘要翻译： 为提高化学放大光致抗蚀剂的分辨率提供了方法。 包含光酸产生剂和包含与保护部分键合的官能团的聚合物的膜沉积在基材上。 该膜暴露于图案化的辐射。 图案化的辐射导致一部分官能团的质子化和膜内的潜像的形成。 质子化官能团与保护部分之间的键被选择性地用具有共振地切断键的波长谱的非热能激发。
-
3.发明申请Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems 有权浸没式光刻系统中浸没介质中气泡消除的方法和装置公开(公告)号：US20050048223A1
公开(公告)日：2005-03-03
申请号：US10653844
申请日：2003-09-02
申请人： Adam Pawloski , Amr Abdo , Gilles Amblard , Bruno LaFontaine , Ivan Lalovic , Harry Levinson , Jeffrey Schefske , Cyrus Tabery , Frank Tsai
发明人： Adam Pawloski , Amr Abdo , Gilles Amblard , Bruno LaFontaine , Ivan Lalovic , Harry Levinson , Jeffrey Schefske , Cyrus Tabery , Frank Tsai
CPC分类号： G03F7/70341
摘要： A method of operating an immersion lithography system, including steps of immersing at least a portion of a wafer to be exposed in an immersion medium, wherein the immersion medium comprises at least one bubble; directing an ultrasonic wave through at least a portion of the immersion medium to disrupt and/or dissipate the at least one bubble; and exposing the wafer with an exposure pattern by passing electromagnetic radiation through the immersion medium subsequent to the directing. Also disclosed is a monitoring and control system for an immersion lithography system.
摘要翻译： 一种操作浸没式光刻系统的方法，包括将要曝光的晶片的至少一部分浸入浸没介质中的步骤，其中浸没介质包括至少一个气泡; 引导超声波穿过所述浸没介质的至少一部分以破坏和/或消散所述至少一个气泡; 以及在引导之后通过使电磁辐射穿过浸渍介质，以曝光图案曝光晶片。 还公开了一种用于浸没式光刻系统的监视和控制系统。
-
公开(公告)号：US06664030B1
公开(公告)日：2003-12-16
申请号：US09779981
申请日：2001-02-09
IPC分类号： C23C804
摘要： An exemplary method of constructing an alternating phase-shifting mask is described. This method can include providing a vapor in a vapor chamber containing a mask blank, and applying a laser to selected areas of the mask blank to deposit material on the integrated circuit substrate. The material is configured to cause a 180° phase shift at the wavelengths the mask is designed for such as 248 nm, 193 nm or 157 nm.
摘要翻译： 描述构成交替移相掩模的示例性方法。 该方法可以包括在包含掩模坯料的蒸气室中提供蒸气，以及将激光施加到掩模坯料的选定区域以将材料沉积在集成电路基板上。 该材料被配置为在掩模设计为例如248nm，193nm或157nm的波长处引起180°相移。
-
5.发明授权公开(公告)号：US06589717B1
公开(公告)日：2003-07-08
申请号：US09715951
申请日：2000-11-17
IPC分类号： C23C804
摘要： An exemplary method of selectively patterning a hard mask or reticle using a laser to cause deposition of hard mask material in locations forming the hard mask pattern. This method can include providing a vapor in a vapor chamber containing an integrated circuit substrate, and applying a laser to selected areas of the integrated circuit substrate to cause a reaction with the vapor and create a structure on the integrated circuit substrate.
摘要翻译： 使用激光对硬掩模或掩模版进行选择性图案化以使硬掩模材料沉积在形成硬掩模图案的位置中的示例性方法。 该方法可以包括在包含集成电路基板的蒸气室中提供蒸气，以及将激光施加到集成电路基板的选定区域以引起与蒸汽的反应并在集成电路基板上产生结构。
-
公开(公告)号：US06806007B1
公开(公告)日：2004-10-19
申请号：US10428270
申请日：2003-05-02
申请人： Amr Yehia Abdo , Bruno LaFontaine
发明人： Amr Yehia Abdo , Bruno LaFontaine
IPC分类号： G03F900
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/24 , G03F1/38 , G03F1/50 , G03F1/60 , G03F7/70783 , G03F7/70875
摘要： A lithography mask or reticle and method of making the same is disclosed wherein the fidelity of pattern transfers is enhanced by way of a reduction in the opportunity for contaminating particles to become wedged between the mask and a chuck upon which the mask may rest during semiconductor processing via electrostatic chucking, and also by facilitating heat dissipation within the mask via thermal conductance to mitigate warping of the mask. One or more thermally conductive pads formed within one or more layers applied to the mask facilitate the thermal conductance, and spaces or apertures formed within the layers reduce the potential for particle contamination.
摘要翻译： 公开了一种光刻掩模或掩模版及其制造方法，其中通过减少在半导体处理期间掩模和掩模在其上搁置的卡盘之间的污染颗粒被楔入的机会而增加图案转印的保真度 通过静电吸附，并且还通过热传导促进掩模内的散热以减轻掩模的翘曲。 在一个或多个施加到掩模上的层中形成的一个或多个导热焊盘有助于导热，并且在层内形成的空间或孔减少了颗粒污染的可能性。
-
7.发明授权公开(公告)号：US06673524B2
公开(公告)日：2004-01-06
申请号：US09780275
申请日：2001-02-09
IPC分类号： C08J718
摘要： An exemplary method of forming an attenuating extreme ultraviolet (EUV) phase-shifting mask is described. This method can include providing a multi-layer mirror over an integrated circuit substrate or a mask blank, providing a buffer layer over the multi-layer mirror, providing a dual element material layer over the buffer layer, and selectively growing features on the integrated circuit substrate or mask blank using a photon assisted chemical vapor deposition (CVD) process when depositing the dual element layer.
摘要翻译： 描述形成衰减极紫外（EUV）移相掩模的示例性方法。 该方法可以包括在集成电路衬底或掩模板上提供多层反射镜，在多层反射镜上提供缓冲层，在缓冲层上提供双重元件材料层，以及在集成电路上选择性地增长特征 衬底或掩模坯料，当沉积双重元件层时，使用光子辅助化学气相沉积（CVD）工艺。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.02 秒)
