公开(公告)号：US20150355257A1

公开(公告)日：2015-12-10

申请号：US14416530

申请日：2014-07-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunwei WU ,  Woobong LEE

IPC: G01R31/02 ,  G06F3/044 ,  G09G3/00

CPC classification number: G01R31/025 ,  G01R27/26 ,  G01R31/2812 ,  G01R31/2829 ,  G06F3/0418 ,  G06F3/044 ,  G09G3/006

Abstract: The present disclosure provides a circuit testing method and a circuit testing system for testing the circuit of a transmissive capacitive touch panel, wherein, the method comprises: when testing a certain induction line in a first electrode matrix or a second electrode matrix, configuring all induction lines in the first electrode matrix and the second electrode matrix except for the induction line to be tested as ground wires, applying a first voltage to the induction line to be tested, and detecting current on the induction line to be tested, and determining that the induction line to be tested is in a short-circuit state when the current is generated on the induction line to be tested; repeating the above step, and testing other induction lines in turn.

Abstract translation: 本公开内容提供了一种用于测试透射电容式触摸屏的电路的电路测试方法和电路测试系统，其中，该方法包括：当在第一电极矩阵或第二电极矩阵中测试某一感应线时，配置所有感应 第一电极矩阵和第二电极矩阵之间的线，除了待测试的感应线作为接地线，对待测试的感应线施加第一电压，以及检测待测试的感应线上的电流，并且确定 当要在被测试的感应线上产生电流时，要测试的感应线处于短路状态; 重复上述步骤，并依次测试其他感应线。

公开(公告)号：US20160293716A1

公开(公告)日：2016-10-06

申请号：US14436373

申请日：2014-08-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO.,LTD.

Inventor： Chunwei WU ,  Woobong LEE

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present disclosure provides a thin film transistor and its manufacturing method, an array substrate, a display device. The thin film transistor includes a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode. The source electrode and the drain electrode are formed above the active layer and located at a first end and a second end of the active layer which are opposite to each other, respectively. The drain electrode completely covers the second end of the active layer.

Abstract translation: 本公开提供一种薄膜晶体管及其制造方法，阵列基板，显示装置。 薄膜晶体管包括栅电极，栅极绝缘层，有源层，源电极和漏电极。 源电极和漏电极形成在有源层的上方，分别位于有源层的彼此相对的第一端和第二端。 漏电极完全覆盖有源层的第二端。

公开(公告)号：US20160013318A1

公开(公告)日：2016-01-14

申请号：US14436309

申请日：2014-07-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiang LIU ,  Woobong LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02658 ,  H01L29/66969

Abstract: Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device comprises an insulating layer and a metal oxide semiconductor layer which are adjacent to each other, and the insulating layer is formed by steps of: forming a first silicon oxide film; and stabilizing the first silicon oxide film by filling a silicon dangling bond therein with a filling atom capable of being bonded to the silicon dangling bond.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括彼此相邻的绝缘层和金属氧化物半导体层，并且绝缘层通过以下步骤形成：形成第一氧化硅膜; 以及通过用能够与硅悬挂键结合的填充原子填充硅悬挂键来稳定第一氧化硅膜。

公开(公告)号：US20160204216A1

公开(公告)日：2016-07-14

申请号：US15075579

申请日：2016-03-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai YUAN ,  Woobong LEE

IPC: H01L29/423 ,  H01L29/40 ,  H01L29/786

CPC classification number: H01L29/42384 ,  H01L29/401 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2029/42388

Abstract: A method for manufacturing the thin film transistor, including: forming a gate, an active layer and a gate insulating layer disposed between the gate and the active layer; wherein the gate insulating layer is in a double-layer structure comprising a first gate insulating layer next to the gate and a second gate insulating layer next to the active layer, and one of the first gate insulating layer and the second gate insulating layer is annealed.

Abstract translation: 一种制造薄膜晶体管的方法，包括：形成栅极，有源层和设置在栅极和有源层之间的栅极绝缘层; 其中所述栅极绝缘层是双层结构，其包括邻近所述栅极的第一栅极绝缘层和邻近所述有源层的第二栅极绝缘层，并且所述第一栅极绝缘层和所述第二栅极绝缘层中的一个被退火 。

公开(公告)号：US20140117359A1

公开(公告)日：2014-05-01

申请号：US13755100

申请日：2013-01-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai YUAN ,  Woobong LEE

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1244 ,  H01L29/4908 ,  H01L29/78606

Abstract: The present invention relate to a display device, an array substrate and a method for manufacturing the same. The array substrate includes a substrate and a thin film transistor and a pixel electrode which are formed on the substrate, the thin film transistor includes a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes and is overlaid with a passivation layer, the active layer of the thin film transistor is of an oxide semiconductor, and the passivation layer comprises at least one layer of inorganic insulating thin film or organic insulating thin film. With this array substrate, the oxide semiconductor can be effectively avoided from being affected by hydrogen-containing groups, so that stability of the whole TFT device is enhanced to a great extent, and yield of final products is increased.

Abstract translation: 显示装置，阵列基板及其制造方法技术领域本发明涉及显示装置，阵列基板及其制造方法。 阵列基板包括基板和形成在基板上的薄膜晶体管和像素电极，薄膜晶体管包括栅电极，栅极绝缘层，有源层以及源极和漏极，并且覆盖有 钝化层，薄膜晶体管的有源层是氧化物半导体，并且钝化层包括至少一层无机绝缘薄膜或有机绝缘薄膜。 利用该阵列基板，可以有效地避免氧化物半导体受含氢基团的影响，从而在很大程度上提高了整个TFT器件的稳定性，并且提高了最终产品的产率。

公开(公告)号：US20130285044A1

公开(公告)日：2013-10-31

申请号：US13630104

申请日：2012-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai YUAN ,  Woobong LEE

IPC: H01L29/786 ,  H01L27/15 ,  H01L27/12

CPC classification number: H01L29/42384 ,  H01L29/401 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2029/42388

Abstract: Embodiments of the present invention relate to a display device, an array substrate, and a thin film transistor. The thin film transistor comprises a gate, an active layer and a gate insulating layer disposed between the gate and the active layer, the active layer is an oxide semiconductor, and the gate insulating layer comprises at least one layer of inorganic insulating thin film. With the gate insulating layer of the thin film transistor, it is possible that an adverse effect on the oxide semiconductor given by hydrogen-containing groups is effectively avoided, stability of the whole TFT device is enhanced to the most extent, and yield of final products is increased.

Abstract translation: 本发明的实施例涉及显示装置，阵列基板和薄膜晶体管。 薄膜晶体管包括栅极，有源层和设置在栅极和有源层之间的栅极绝缘层，有源层是氧化物半导体，栅极绝缘层包括至少一层无机绝缘薄膜。 利用薄膜晶体管的栅极绝缘层，可以有效地避免由含氢基团给出的对氧化物半导体的不利影响，整个TFT器件的稳定性在最大程度上得到提高，并且最终产品的产率 增加了。