公开(公告)号：US3786323A

公开(公告)日：1974-01-15

申请号：US3786323D

申请日：1972-07-03

Applicant: BELL TELEPHONE LABOR INC

Inventor： PETERS F ,  SCHWARTZ N

IPC: C23C14/00 ,  H01B1/00 ,  H01C7/00 ,  H01C17/12 ,  H01G1/01

CPC classification number: H01C17/12 ,  C23C14/0057 ,  H01B1/00 ,  H01C7/006 ,  Y10T29/435

Abstract: A thin film material capable of functioning as the anode in electrochemically formed thin film capacitors and as the resistive track in anodized resistors in thin film integrated circuits comprising a film of sputtered tantalum and silicon.

Abstract translation: 一种能够在电化学形成的薄膜电容器中用作阳极的薄膜材料，以及薄膜集成电路中的阳极氧化电阻器中的电阻轨迹，其包括溅射的钽和硅的膜。

公开(公告)号：US3736242A

公开(公告)日：1973-05-29

申请号：US3736242D

申请日：1970-12-04

Applicant: BELL TELEPHONE LABOR INC

Inventor： SCHWARTZ N ,  TOWNSHIP M ,  COUNTY M ,  VRATNY F

IPC: C23C14/35 ,  H01J37/34 ,  C23C15/00

CPC classification number: H01J37/34 ,  C23C14/35

Abstract: THE ELECTWRICAL AND PHYSICAL PORPERTIES OF CATHODICALLY SPUTTERED FILMS MAY BE CONTROLLED BY UTILIZING ALTERNATIVELY, ELECTRON NEGATIVE ION, AND POSITIVE ION BOMBARDMENT OF SUBSTRATE SURFACES DURING THE COURSE OF THE SPUTTERING PROCESS.