Monolithic semiconductor apparatus adapted for sequential charge transfer
    1.
    发明授权
    Monolithic semiconductor apparatus adapted for sequential charge transfer 失效
    适用于顺序充电转移的单片半导体器件

    公开(公告)号:US3660697A

    公开(公告)日:1972-05-02

    申请号:US3660697D

    申请日:1970-02-16

    CPC classification number: H01L27/1055 G11C19/282 H01L29/76808 H01L29/76841

    Abstract: The invention is a form of monolithic semiconductor apparatus adapted for the storage and manipulation of electronic signals representing information. Basically, the apparatus includes a plurality of spaced localized zones of one type semiconductivity adjacent the surface of a semiconductive bulk portion of the other type conductivity. A plurality of localized electrodes, registered in one-to-one correspondence with the localized zones, are disposed over a dielectric layer covering the semiconductive portions. Each of the electrodes is delimited in lateral extent so as to extend over substantially all of the space between a pair of closest zones and over a substantial portion of only one of that pair of zones so that the capacitance between the electrode and the zone over which it extends is substantially greater than the capacitance between that electrode and the other zone of that pair of zones. Signals in the form of varying deficiencies of majority carriers are stored temporarily in the localized zones and are gated sequentially from one zone to the zone next adjacent upon application of two-phase clock pulses to alternate electrodes. Constant background pulses upon which signals are superimposed are circulated to reduce distortion.

    Abstract translation: 本发明是适于存储和操纵表示信息的电子信号的单片半导体装置的形式。 基本上,该装置包括与另一种类型导电性的半导体本体部分的表面相邻的一个类型半导体性的多个间隔开的局部区域。 在覆盖半导体部分的电介质层上设置多个与局部区域一一对应配置的局部电极。 每个电极以横向范围限定,以便在一对最近区域之间的基本上所有的空间上延伸,并且在该对区域中的仅一个区域的大部分上延伸,使得电极和区域之间的电容 其延伸实质上大于该电极与该对区域的另一区域之间的电容。 多数载波变化不足的信号暂时存储在局部区域中,并且在将两相时钟脉冲应用于交替电极时,从一个区域到下一个相邻的区域依次选通。 叠加信号的恒定背景脉冲被循环以减少失真。

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