Vibration insulating device with flexible diaphragm between radially
outer gas chamber and radially inner liquid chamber
    1.
    发明授权
    Vibration insulating device with flexible diaphragm between radially outer gas chamber and radially inner liquid chamber 失效
    具有柔性隔膜的隔振装置,位于径向外部气室和径向内部液体室之间

    公开(公告)号:US4790520A

    公开(公告)日:1988-12-13

    申请号:US933898

    申请日:1986-11-24

    摘要: A vibration insulating device to be installed between two members of a vibration system of an automotive vehicle. The device consists of an annular elastic member disposed between coaxial inner and outer cylindrical members and located coaxial with the outer cylindrical member. The elastic member is formed at its outer peripheral surface with a deep annular groove coaxial with the outer cylindrical member which groove is covered with the outer cylindrical member to define an annular hollow chamber. A generally cylindrical flexible diaphragm member is secured between the outer cylindrical member and the elastic member in such a manner that its central annular section divides the hollow chamber into a radially outward gas chamber and a radially inward liquid chamber, thereby effectively absorbing even high frequency small amplitude vibration transmitted to the device under deformation of the flexible diaphragm member.

    摘要翻译: 一种安装在机动车辆的振动系统的两个构件之间的隔振装置。 该装置由环形弹性构件组成,该弹性构件设置在同心的内圆筒构件和外圆筒构件之间,并与外筒构件同轴设置。 弹性构件在其外周面上形成有与外圆柱形构件同轴的深的环形槽,该槽与外圆筒构件覆盖以限定环形中空室。 大致圆柱形的柔性隔膜件固定在外圆柱件和弹性件之间,使其中央环形部分将中空室分成径向向外的气室和径向向内的液体室,从而有效地吸收高频小 振动振动在柔性隔膜构件的变形下传递到装置。

    Semiconductor memory, memory device, and memory card
    2.
    发明授权
    Semiconductor memory, memory device, and memory card 失效
    半导体存储器,存储器件和存储卡

    公开(公告)号:US06477671B2

    公开(公告)日:2002-11-05

    申请号:US09845350

    申请日:2001-05-01

    IPC分类号: G11C2900

    CPC分类号: G11C29/70 G11C29/88

    摘要: A semiconductor memory (1) comprising a plurality of memory blocks (2 and 3) provided with a lot of memory cells, a data input/output buffer (7), and first control means (11) for controlling the rewriting and reading of data for the memory cells is provided with first storage means (30) for designating part of the defective memory blocks and detection means (32) for detecting the access to a defective memory block designated by the first storage means in accordance with an address signal. In this case, when the detection means detects the access to a defective memory, the first control means inhibits the data rewrite operation for the instruction of the data rewrite operation and inhibits the data output operation of the data input/output buffer for the instruction of the data read operation. The inhibiting function makes it possible to provide a memory device having the compatibility with a non-defective semiconductor memory only by combining semiconductor memories having irremediable defects without fixing the levels of specific address input terminals so as to keep the defective memory blocks non-selective.

    摘要翻译: 一种半导体存储器(1),包括设置有大量存储单元的多个存储块(2和3),数据输入/输出缓冲器(7)和用于控制数据的重写和读取的第一控制装置(11) 为存储单元设置有用于指定部分缺陷存储块的第一存储装置(30)和用于根据地址信号检测由第一存储装置指定的缺陷存储块的存取的检测装置(32)。 在这种情况下,当检测装置检测到对缺陷存储器的访问时,第一控制装置禁止用于数据重写操作的指令的数据重写操作,并且禁止数据输入/输出缓冲器的数据输出操作用于指令 数据读取操作。 禁止功能使得可以仅通过组合具有不可弥补缺陷的半导体存储器来提供具有与无缺陷半导体存储器的兼容性的存储器件,而不固定特定地址输入端子的电平,以便保持有缺陷的存储块非选择性。

    Model-based job supporting system and method thereof
    5.
    发明授权
    Model-based job supporting system and method thereof 失效
    基于模型的工作支持系统及其方法

    公开(公告)号:US6141665A

    公开(公告)日:2000-10-31

    申请号:US800380

    申请日:1997-02-14

    IPC分类号: G06Q10/10 G06F15/00 G06F17/60

    CPC分类号: G06Q10/10

    摘要: A job model with which an organization model representing an organization structure, a document model representing a document structure, and a work model representing a work procedure are correlated, is stored independent from a service model defining each service. When a service is performed, with reference to the job model corresponding to the service model, a service executing module causes a tool control module to control a tool. Thus, the required service is accomplished.

    摘要翻译: 与代表每个服务的服务模型独立地存储表示组织结构的组织模型,表示文档结构的文档模型和表示工作过程的工作模型相关联的作业模型。 当执行服务时,参考与服务模型对应的作业模型,服务执行模块使得工具控制模块控制工具。 因此,完成所需的服务。

    Semiconductor memory, memory device, and memory card
    9.
    发明授权
    Semiconductor memory, memory device, and memory card 有权
    半导体存储器,存储器件和存储卡

    公开(公告)号:US06266792B1

    公开(公告)日:2001-07-24

    申请号:US09427068

    申请日:1999-10-26

    IPC分类号: G11C2900

    CPC分类号: G11C29/70 G11C29/88

    摘要: A semiconductor memory (1) comprising a plurality of memory blocks (2 and 3) provided with a lot of memory cells, a data-input/output buffer (7), and first control means (11) for controlling the rewriting and reading of data for the memory cells is provided with first storage means (30) for designating part of the defective memory blocks and detection means (32) for detecting the access to a defective memory block designated by the first storage means in accordance with an address signal. In this case, when the detection means detects the access to a defective memory, the first control means inhibits the data rewrite operation for the instruction of the data rewrite operation and inhibits the data output operation of the data input/output buffer for the instruction of the data read operation. The inhibiting function makes it possible to provide a memory device having the compatibility with a non-defective semiconductor memory only by combining semiconductor memories having irremediable defects without fixing the levels of specific address input terminals so as to keep the defective memory blocks non-selective.

    摘要翻译: 一种半导体存储器(1),包括设置有大量存储单元的多个存储块(2和3),数据输入/输出缓冲器(7)和用于控制重写和读取的第一控制装置 存储单元的数据设置有用于指定部分缺陷存储块的第一存储装置(30)和用于根据地址信号检测由第一存储装置指定的缺陷存储块的访问的检测装置(32)。 在这种情况下,当检测装置检测到对缺陷存储器的访问时,第一控制装置禁止用于数据重写操作的指令的数据重写操作,并且禁止数据输入/输出缓冲器的数据输出操作用于指令 数据读取操作。 禁止功能使得可以仅通过组合具有不可弥补缺陷的半导体存储器来提供具有与无缺陷半导体存储器的兼容性的存储器件,而不固定特定地址输入端子的电平,以便保持有缺陷的存储块非选择性。