公开(公告)号：US20170110358A1

公开(公告)日：2017-04-20

申请号：US15395938

申请日：2016-12-30

Applicant: Applied Materials, Inc.

Inventor： S. M. Reza SADJADI ,  Wendell Glen BOYD, JR. ,  Vijay D. PARKHE ,  Maxim Mikhailovich NOGINOV

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L27/12

CPC classification number: H01L21/28556 ,  C23C16/00 ,  G06K2009/00738 ,  H01J37/32697 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67063 ,  H01L21/67103 ,  H01L21/6833 ,  H01L27/1255 ,  H01L29/93 ,  H04N7/181 ,  H04N7/188

Abstract: Implementations described herein provide a chucking circuit for a pixilated electrostatic chuck which enables both lateral and azimuthal tuning of the RF coupling between an electrostatic chuck and a substrate placed thereon. In one embodiment, a chucking circuit for an electrostatic chuck (ESC) has one or more chucking electrodes disposed in a dielectric body of the ESC, a plurality of pixel electrodes disposed in the dielectric body, and a chucking circuit having the one or more chucking electrodes and the plurality of pixel electrodes, the chucking circuit operable to electrostatically chuck a substrate to a workpiece support surface of the ESC, the chucking circuit having a plurality of secondary circuits, wherein each secondary circuit includes at least one capacitor of a plurality of capacitors, each secondary circuit is configured to independently control an impedance between one of the pixel electrodes and a ground.

公开(公告)号：US20160329256A1

公开(公告)日：2016-11-10

申请号：US15212938

申请日：2016-07-18

Applicant: Applied Materials, Inc.

Inventor： S. M. Reza SADJADI ,  Dmitry LUBOMIRSKY ,  Hamid NOORBAKHSH ,  John Zheng YE ,  David H. QUACH ,  Sean S. KANG

IPC: H01L21/66 ,  H01L21/3065 ,  C23C14/22 ,  H01L21/683 ,  H01J37/32 ,  C23C16/44 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L22/20 ,  C23C14/22 ,  C23C16/44 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32605 ,  H01J37/32642 ,  H01J37/32697 ,  H01J2237/334 ,  H01L21/02104 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6833 ,  H01L21/68735

Abstract: A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the phyisical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.