公开(公告)号：US20230005783A1

公开(公告)日：2023-01-05

申请号：US17940369

申请日：2022-09-08

Applicant: Applied Materials, Inc.

Inventor： Jason M. Schaller ,  Luke Bonecutter ,  Charles T. Carlson ,  Rajkumar Thanu ,  Karuppasamy Muthukamatchi ,  Jeff Hudgens ,  Benjamin Riordon

IPC: H01L21/687 ,  B65G47/90 ,  H01L21/67

Abstract: Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft counter-rotatable with the first shaft. The transfer apparatus may include an eccentric hub extending at least partially through the central hub, and which is radially offset from a central axis of the central hub. The transfer apparatus may also include an end effector coupled with the eccentric hub. The end effector may include a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports.

公开(公告)号：US11326256B2

公开(公告)日：2022-05-10

申请号：US16691259

申请日：2019-11-21

Applicant: Applied Materials, Inc.

Inventor： Luke Bonecutter ,  Yunzhe Yang ,  Rupankar Choudhury ,  Abhijit Kangude

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44

Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

公开(公告)号：US11355367B2

公开(公告)日：2022-06-07

申请号：US16922536

申请日：2020-07-07

Applicant: Applied Materials, Inc.

Inventor： Jason M. Schaller ,  Charles T. Carlson ,  Luke Bonecutter ,  David Blahnik ,  Karuppasamy Muthukamatchi ,  Jeff Hudgens ,  Benjamin Riordon

IPC: H01L21/67 ,  B65G47/90 ,  H01L21/687 ,  H01L21/68

Abstract: Exemplary substrate processing systems may include a transfer region housing defining a transfer region, and including substrate supports and a transfer apparatus. The transfer apparatus may include a central hub having a housing, and including a first shaft and a second shaft. The housing may be coupled with the second shaft, and may define an internal housing volume. The transfer apparatus may include a plurality of arms equal to a number of substrate supports of the plurality of substrate supports. Each arm of the plurality of arms may be coupled about an exterior of the housing. The transfer apparatus may include a plurality of arm hubs disposed within the internal housing volume. Each arm hub of the plurality of arm hubs may be coupled with an arm of the plurality of arms through the housing. The arm hubs may be coupled with the first shaft of the central hub.

公开(公告)号：US10984990B2

公开(公告)日：2021-04-20

申请号：US15955290

申请日：2018-04-17

Applicant: Applied Materials, Inc.

Inventor： Ramesh Bokka ,  Jason M. Schaller ,  Jay D. Pinson, II ,  Luke Bonecutter

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  H01L21/67 ,  H01L21/683 ,  C23C16/503 ,  C23C16/517 ,  C23C16/509 ,  C23C16/46

Abstract: A plasma processing apparatus is provided including a radio frequency power source; a direct current power source; a chamber enclosing a process volume; and a substrate support assembly disposed in the process volume. The substrate support assembly includes a substrate support having a substrate supporting surface; an electrode disposed in the substrate support; and an interconnect assembly coupling the radio frequency power source and the direct current power source with the electrode.

公开(公告)号：US11443973B2

公开(公告)日：2022-09-13

申请号：US16922727

申请日：2020-07-07

Applicant: Applied Materials, Inc.

Inventor： Jason M. Schaller ,  Luke Bonecutter ,  Charles T. Carlson ,  Rajkumar Thanu ,  Karuppasamy Muthukamatchi ,  Jeff Hudgens ,  Benjamin Riordon

IPC: H01L21/68 ,  H01L21/687 ,  B65G47/90 ,  H01L21/67

Abstract: Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft counter-rotatable with the first shaft. The transfer apparatus may include an eccentric hub extending at least partially through the central hub, and which is radially offset from a central axis of the central hub. The transfer apparatus may also include an end effector coupled with the eccentric hub. The end effector may include a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports.

公开(公告)号：US11227746B2

公开(公告)日：2022-01-18

申请号：US16980931

申请日：2019-02-20

Applicant: Applied Materials, Inc.

Inventor： Luke Bonecutter ,  Abhijit Kangude

IPC: H01J37/32 ,  H01L21/67

Abstract: Embodiments described herein provide a backside gas delivery assembly that prevents inert gas from forming parasitic plasma. The backside gas delivery assembly includes a first gas channel disposed in a stem of a substrate support assembly. The substrate support assembly includes a substrate support having a second gas channel extending from the first gas channel. The backside gas delivery assembly further includes a porous plug disposed within the first gas channel positioned at an interface of the stem and the substrate support, a gas source connected to the first gas channel configured to deliver an inert gas to a backside surface of a substrate disposed on an upper surface of the substrate support, and a gas tube in the first gas channel extending to the porous plug positioned at the interface of the stem and the substrate support.

公开(公告)号：US20210013084A1

公开(公告)日：2021-01-14

申请号：US16922727

申请日：2020-07-07

Applicant: Applied Materials, Inc.

Inventor： Jason M. Schaller ,  Luke Bonecutter ,  Charles T. Carlson ,  Rajkumar Thanu ,  Karuppasamy Muthukamatchi ,  Jeff Hudgens ,  Benjamin Riordon

IPC: H01L21/687 ,  H01L21/67 ,  B65G47/90

Abstract: Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft counter-rotatable with the first shaft. The transfer apparatus may include an eccentric hub extending at least partially through the central hub, and which is radially offset from a central axis of the central hub. The transfer apparatus may also include an end effector coupled with the eccentric hub. The end effector may include a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports.

公开(公告)号：US20240170251A1

公开(公告)日：2024-05-23

申请号：US17993566

申请日：2022-11-23

Applicant: Applied Materials, Inc.

Inventor： William Herron Park, JR. ,  Charles T. Carlson ,  Luke Bonecutter

IPC: H01J37/317 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J2237/0473

Abstract: An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator including at least one acceleration stage including a resonator and a resonator coil disposed within a resonator chamber, wherein the resonator coil is a tubular body having a plurality of coaxial layers, including an inner layer, a middle layer, and an outer layer, wherein the outer layer is formed of a dielectric material.

公开(公告)号：US11948817B2

公开(公告)日：2024-04-02

申请号：US17965491

申请日：2022-10-13

Applicant: Applied Materials, Inc.

Inventor： Charles T. Carlson ,  Jason M. Schaller ,  Luke Bonecutter ,  David Blahnik

IPC: H01L21/67 ,  B65G47/90 ,  H01L21/68 ,  H01L21/687

CPC classification number: H01L21/67196 ,  B65G47/907 ,  H01L21/68 ,  H01L21/68707 ,  H01L21/67167

Abstract: Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.

公开(公告)号：US20220093426A1

公开(公告)日：2022-03-24

申请号：US17026862

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Samuel W. Shannon ,  Luke Bonecutter ,  Viren Kalsekar ,  Chahal Neema

IPC: H01L21/67 ,  H01J37/32

Abstract: Exemplary substrate processing systems may include a base. The systems may include a chamber body having a transfer region housing that defines a transfer region. The transfer region housing may include a first portion and a second portion. The systems may include a lid assembly positioned atop the chamber body. The lid assembly may include a lid and a lid stack. The systems may include one or more lift mechanisms that elevate the first portion of the transfer region housing and at least a portion of the lid assembly relative to the base. The first portion and the second portion may mate with one another when the transfer region housing is in an operational configuration. The first portion and the second portion may be separated when the first portion of the transfer region housing is elevated.