公开(公告)号：US20150064921A1

公开(公告)日：2015-03-05

申请号：US14015557

申请日：2013-08-30

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. NEMANI ,  Sean S. KANG ,  Jeremiah T. P. PENDER ,  Chia-Ling KAO ,  Sergey G. BELOSTOTSKIY ,  Lina ZHU

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3081 ,  H01L21/68742

Abstract: Methods for etching a material layer disposed on the substrate using a low temperature etching process along with a subsequent low temperature plasma annealing process are provided. In one embodiment, a method for etching a material layer disposed on a substrate includes transferring a substrate having a material layer disposed thereon into an etching processing chamber, supplying an etching gas mixture into the processing chamber, remotely generating a plasma in the etching gas mixture to etch the material layer disposed on the substrate, and plasma annealing the material layer at a substrate temperature less than 100 degrees Celsius.

Abstract translation: 提供了使用低温蚀刻工艺以及随后的低温等离子体退火工艺来蚀刻设置在基板上的材料层的方法。 在一个实施例中，用于蚀刻设置在基板上的材料层的方法包括将其上设置有材料层的基板转印到蚀刻处理室中，将蚀刻气体混合物供应到处理室中，在蚀刻气体混合物中远程产生等离子体 蚀刻设置在基板上的材料层，以及在低于100摄氏度的衬底温度下对材料层进行等离子体退火。

公开(公告)号：US20140357083A1

公开(公告)日：2014-12-04

申请号：US14283694

申请日：2014-05-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Mang-Mang LING ,  Lina ZHU ,  Nancy FUNG ,  Kwang-Soo KIM ,  Sean S. KANG ,  Srinivas D. NEMANI

IPC: H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/31138 ,  B81C1/00031 ,  B81C2201/0149 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/32139

Abstract: Embodiments of methods and an apparatus for utilizing a directed self-assembly (DSA) process on block copolymers (BCPs) to form a defect-free photoresist layer for feature transfer onto a substrate are provided. In one embodiment, a method for performing a dry development process includes transferring a substrate having a layer of block copolymers disposed thereon into an etching processing chamber, wherein at least a first type and a second type of polymers comprising the block copolymers are aggregated into a first group of regions and a second group of regions on the substrate, supplying an etching gas mixture including at least a carbon containing gas into the etching processing chamber, and predominately etching the second type of the polymers disposed on the second groups of regions on the substrate in the presence of the etching gas mixture.

Abstract translation: 提供了用于利用嵌段共聚物（BCP）上的定向自组装（DSA）工艺以形成用于将特征转移到衬底上的无缺陷光致抗蚀剂层的方法和装置的实施方案。 在一个实施方案中，用于进行干显影处理的方法包括将其上设置有嵌段共聚物层的基材转移到蚀刻处理室中，其中至少第一类型和第二类型的包含嵌段共聚物的聚合物聚集成 第一组区域和第二组区域，将至少包含含碳气体的蚀刻气体混合物供应到蚀刻处理室中，并且主要蚀刻位于第二组区域上的第二类聚合物 衬底在蚀刻气体混合物的存在下。