公开(公告)号：US11501972B2

公开(公告)日：2022-11-15

申请号：US16935774

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Vikram M. Bhosle ,  Nicholas P. T. Bateman ,  Timothy J. Miller ,  Jun Seok Lee ,  Deven Raj Mittal

IPC: H01L21/311 ,  H01L21/265 ,  C23C14/02 ,  C23C14/48 ,  H01L21/02

Abstract: An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.

公开(公告)号：US20220028693A1

公开(公告)日：2022-01-27

申请号：US16935774

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Vikram M. Bhosle ,  Nicholas P.T. Bateman ,  Timothy J. Miller ,  Jun Seok Lee ,  Deven Raj Mittal

IPC: H01L21/265 ,  H01L21/311 ,  C23C14/48 ,  C23C14/02

Abstract: An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.

公开(公告)号：US11127601B2

公开(公告)日：2021-09-21

申请号：US16417853

申请日：2019-05-21

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, Jr.

IPC: H01L21/322 ,  H01L21/263

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US20200373170A1

公开(公告)日：2020-11-26

申请号：US16417853

申请日：2019-05-21

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, Jr.

IPC: H01L21/322

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US11545368B2

公开(公告)日：2023-01-03

申请号：US17406183

申请日：2021-08-19

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, Jr.

IPC: H01L21/322 ,  H01L21/263

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US20210384041A1

公开(公告)日：2021-12-09

申请号：US17406183

申请日：2021-08-19

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, JR.

IPC: H01L21/322 ,  H01L21/263

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US10988843B2

公开(公告)日：2021-04-27

申请号：US16526310

申请日：2019-07-30

Applicant: Applied Materials, Inc.

Inventor： Il-Woong Koo ,  Cuiyang Wang ,  Peter G. Ryan, Jr. ,  Jun Seok Lee

IPC: C23C16/44 ,  G06K9/62 ,  G05B23/02

Abstract: A system for determining when a cleaning process has completed is disclosed. This system relies on an increase in the amount of gas in the processing chamber that occurs when the cleaning is complete. This increase in the amount of gas may be detected in several ways. In one embodiment, a downstream pendulum valve is used to maintain the pressure within the processing chamber at a predetermined value. An increase in the size of the opening in the pendulum valve is indicative of the amount of gas in the system. In another embodiment, a sensor may be used to monitor the pressure within the processing chamber, while the incoming and outgoing flow rates are held constant. An increase in the pressure is indicative of an increase in the amount of gas in the processing chamber. This increase in the amount of gas is used to terminate the cleaning process.

公开(公告)号：US20210032746A1

公开(公告)日：2021-02-04

申请号：US16526310

申请日：2019-07-30

Applicant: Applied Materials, Inc.

Inventor： Il-Woong Koo ,  Cuiyang Wang ,  Peter G. Ryan, JR. ,  Jun Seok Lee

IPC: C23C16/44 ,  G05B23/02 ,  G06K9/62

Abstract: A system for determining when a cleaning process has completed is disclosed. This system relies on an increase in the amount of gas in the processing chamber that occurs when the cleaning is complete. This increase in the amount of gas may be detected in several ways. In one embodiment, a downstream pendulum valve is used to maintain the pressure within the processing chamber at a predetermined value. An increase in the size of the opening in the pendulum valve is indicative of the amount of gas in the system. In another embodiment, a sensor may be used to monitor the pressure within the processing chamber, while the incoming and outgoing flow rates are held constant. An increase in the pressure is indicative of an increase in the amount of gas in the processing chamber. This increase in the amount of gas is used to terminate the cleaning process.

公开(公告)号：US20240006158A1

公开(公告)日：2024-01-04

申请号：US17854456

申请日：2022-06-30

Applicant: Applied Materials, Inc.

Inventor： Vikram M. Bhosle ,  Timothy J. Miller ,  Jun Seok Lee ,  Deven Raj Mittal

IPC: H01J37/32 ,  H01L21/3115 ,  H01L21/66

CPC classification number: H01J37/32412 ,  H01J37/3244 ,  H01J37/32981 ,  H01J37/32697 ,  H01L21/31155 ,  H01L22/26 ,  H01J2237/24585 ,  H01J2237/3365 ,  H01L21/31111

Abstract: A method for reducing a wet etch rate of flowable chemical vapor deposition (FCVD) oxide layers in a semiconductor wafer, the method including performing a plasma doping operation on the semiconductor wafer using a primary dopant gas and a diluent gas adapted to reduce a wet etch rate of the FCVD oxide layer, wherein the dopant gas and the diluent gas are supplied by a gas source of a plasma doping system, wherein the diluent gas is provided in an amount of 0.01%-5% by volume of the total amount of gas supplied by the gas source 36 during the plasma doping operation, and wherein the primary dopant gas is He and the diluent gas is selected from a group including of CH4, CO, CO2, and CF2.