公开(公告)号：US11127601B2

公开(公告)日：2021-09-21

申请号：US16417853

申请日：2019-05-21

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, Jr.

IPC: H01L21/322 ,  H01L21/263

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US20200373170A1

公开(公告)日：2020-11-26

申请号：US16417853

申请日：2019-05-21

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, Jr.

IPC: H01L21/322

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US11545368B2

公开(公告)日：2023-01-03

申请号：US17406183

申请日：2021-08-19

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, Jr.

IPC: H01L21/322 ,  H01L21/263

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US10988843B2

公开(公告)日：2021-04-27

申请号：US16526310

申请日：2019-07-30

Applicant: Applied Materials, Inc.

Inventor： Il-Woong Koo ,  Cuiyang Wang ,  Peter G. Ryan, Jr. ,  Jun Seok Lee

IPC: C23C16/44 ,  G06K9/62 ,  G05B23/02

Abstract: A system for determining when a cleaning process has completed is disclosed. This system relies on an increase in the amount of gas in the processing chamber that occurs when the cleaning is complete. This increase in the amount of gas may be detected in several ways. In one embodiment, a downstream pendulum valve is used to maintain the pressure within the processing chamber at a predetermined value. An increase in the size of the opening in the pendulum valve is indicative of the amount of gas in the system. In another embodiment, a sensor may be used to monitor the pressure within the processing chamber, while the incoming and outgoing flow rates are held constant. An increase in the pressure is indicative of an increase in the amount of gas in the processing chamber. This increase in the amount of gas is used to terminate the cleaning process.