VACUUM PROCESSING SYSTEM, APPARATUS AND METHOD FOR TRANSPORTING A THIN FILM SUBSTRATE

    公开(公告)号:US20240409350A1

    公开(公告)日:2024-12-12

    申请号:US18697050

    申请日:2021-10-26

    Abstract: An apparatus for transportation of a thin film substrate under vacuum conditions is described. The apparatus for transportation includes a rotatable roller with a substrate facing surface including a first substrate facing surface portion, wherein the substrate facing surface includes one or more gas outlets, wherein the one or more gas outlets are configured for releasing a gas flow and the roller includes a deposition region and at least one non-deposition region. The apparatus further includes a gas distribution for providing the gas flow through the one or more gas outlets into an interspace between the thin film substrate and the first substrate facing surface portion, and a sealing belt conveyor system including one or more sealing belts provided at the at least one non-deposition region.

    ROLL EXCHANGE CHAMBER, ROLL-TO-ROLL PROCESSING SYSTEM AND METHOD OF CONTINUOUSLY PROVIDING A FLEXIBLE SUBSTRATE

    公开(公告)号:US20230406663A1

    公开(公告)日:2023-12-21

    申请号:US18029860

    申请日:2020-11-05

    CPC classification number: B65H19/1873 B65H2301/4631

    Abstract: A roll exchange chamber for exchanging a substrate roll is described. The roll exchange chamber includes a rotatable base construction being rotatable around a central axis. The base construction comprises a first roll holder for holding a first substrate roll, a second roll holder for holding a second substrate roll, and a wall for providing a first compartment and a second compartment in the roll exchange chamber. The wall is arranged between the first roll holder and the second roll holder. Further, a roll-to-roll processing system with a roll exchange chamber as well as a method of continuously providing a flexible substrate in a roll-to-roll processing system are described.

    METHOD OF COOLING A DEPOSITION SOURCE, CHAMBER FOR COOLING A DEPOSITION SOURCE AND DEPOSITION SYSTEM

    公开(公告)号:US20200332413A1

    公开(公告)日:2020-10-22

    申请号:US16759696

    申请日:2017-11-16

    Abstract: A method (100) of cooling a deposition source (200) is described. The method includes stopping (110) depositing material from the deposition source, the deposition source being arranged in a deposition chamber (250), and introducing (120) a cooling gas into the deposition chamber (250), the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)]. Further, a chamber for cooling a deposition source is described. The chamber includes a deposition source being arranged in the chamber. Further, the chamber includes a cooling gas supply system configured for providing a cooling gas into the chamber, the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)].

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