公开(公告)号：US20240301552A1

公开(公告)日：2024-09-12

申请号：US18119432

申请日：2023-03-09

Applicant: APPLIED MATERIALS, INC. ,  The Regents of the University of California

Inventor： Harshil Kashyap ,  Andrew C. Kummel ,  Ajay Kumar Yadav ,  Keith T. Wong ,  Srinivas Nemani ,  Ellie Yieh

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/40

CPC classification number: C23C16/45529 ,  C23C16/24 ,  C23C16/40 ,  C23C16/45546 ,  C23C16/45553

Abstract: Described herein is a method for performing an atomic layer deposition process to form a silicon doped oxide film on a surface of the substrate. The oxide film may be a hafnium-zirconium oxide film, or a zirconium oxide film. The atomic layer deposition process may include forming the oxide layers and a silicon layer using a hydrogen peroxide as at least one of the precursors used in formation of the oxide layers.

公开(公告)号：US11387071B2

公开(公告)日：2022-07-12

申请号：US16733299

申请日：2020-01-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Qiwei Liang ,  Srinivas D Nemani ,  Ellie Yieh ,  Douglas Buchberger ,  Chentsau Chris Ying

IPC: H01J37/09 ,  H01J37/305 ,  H01J37/20 ,  H01J37/30

Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

公开(公告)号：US20210134618A1

公开(公告)日：2021-05-06

申请号：US17145194

申请日：2021-01-08

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh ,  Sergey G. Belostotskiy

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/683

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US10943779B2

公开(公告)日：2021-03-09

申请号：US15356475

申请日：2016-11-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ellie Yieh ,  Ludovic Godet ,  Srinivas Nemani ,  Er-Xuan Ping ,  Gary Dickerson

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/67 ,  C23C14/02 ,  C23C14/04 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213

Abstract: Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.

公开(公告)号：US10692734B2

公开(公告)日：2020-06-23

申请号：US16171053

申请日：2018-10-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Jong Mun Kim ,  Chentsau Chris Ying ,  He Ren ,  Srinivas D. Nemani ,  Ellie Yieh

IPC: H01L23/52 ,  H01L21/3213 ,  H01L23/532

Abstract: Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.

公开(公告)号：US10475655B2

公开(公告)日：2019-11-12

申请号：US15988820

申请日：2018-05-24

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond Hung ,  Namsung Kim ,  Srinivas Nemani ,  Ellie Yieh ,  Jong Choi ,  Christopher Ahles ,  Andrew Kummel

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/324

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.

公开(公告)号：US10096496B2

公开(公告)日：2018-10-09

申请号：US15495832

申请日：2017-04-24

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh ,  Sergey G. Belostotskiy

IPC: H01L21/76 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US09666414B2

公开(公告)日：2017-05-30

申请号：US13651074

申请日：2012-10-12

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh ,  Sergey G. Belostotskiy

IPC: C23C14/24 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/02

CPC classification number: H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US11955333B2

公开(公告)日：2024-04-09

申请号：US17208719

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Jethro Tannos ,  Bhargav Sridhar Citla ,  Srinivas D. Nemani ,  Ellie Yieh ,  Joshua Alan Rubnitz ,  Erica Chen ,  Soham Sunjay Asrani ,  Nikolaos Bekiaris ,  Douglas Arthur Buchberger, Jr.

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02

CPC classification number: H01L21/02326 ,  C23C16/401 ,  C23C16/4584 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02274 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：US11410860B2

公开(公告)日：2022-08-09

申请号：US17145194

申请日：2021-01-08

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh ,  Sergey G. Belostotskiy

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.