SURFACE CLEANING WITH DIRECTED HIGH PRESSURE CHEMISTRY

    公开(公告)号:US20230178388A1

    公开(公告)日:2023-06-08

    申请号:US17541540

    申请日:2021-12-03

    IPC分类号: H01L21/67 B08B3/02

    摘要: Cleaning chambers may include a substrate support having a substrate seating position. The cleaning chambers may include a plurality of fluid nozzles facing the substrate support. Each fluid nozzle of the plurality of fluid nozzles may define a fluid port characterized by a leading edge and a trailing edge. Each fluid nozzle of the plurality of fluid nozzles may be angled relative to the substrate seating position of the substrate support to produce an interior angle of greater than or about 90° at an intersection location across the substrate seating position for a fluid delivered from each fluid nozzle at the leading edge of the fluid port.

    TEMPERATURE CONTROL WITH INTRA-LAYER TRANSITION DURING CMP

    公开(公告)号:US20220281061A1

    公开(公告)日:2022-09-08

    申请号:US17677891

    申请日:2022-02-22

    IPC分类号: B24B37/015

    摘要: A method for removing material from a substrate includes dispensing an abrasive slurry on a polishing pad, storing an indication of a relative charge on the abrasive agent, contacting a surface of a substrate to the polishing pad in the presence of the slurry, generating relative motion between the substrate and the polishing pad, measuring a removal rate for the substrate, comparing a the measured removal rate to a target removal rate and determining whether to increase or decrease the removal rate based on the comparison, determining whether to increase or decrease a temperature of an interface between the polishing pad and the substrate based on the indication of the relative charge of the abrasive agent and on whether to increase or decrease the removal rate, and controlling a temperature of the interface as determined to modify the removal rate.

    CLEANING SYSTEM WITH IN-LINE SPM PROCESSING

    公开(公告)号:US20210407825A1

    公开(公告)日:2021-12-30

    申请号:US17346116

    申请日:2021-06-11

    摘要: A cleaning system for processing a substrate after polishing includes a sulfuric peroxide mix (SPM) module, at least two cleaning elements, and a plurality of robots. The SPM module includes a sulfuric peroxide mix (SPM) cleaner having a first container to hold a sulfuric peroxide mix liquid and five to twenty first supports to hold five to twenty substrates in the liquid in the first container, and a rinsing station having a second container to hold a rinsing liquid and five to twenty second supports to hold five to twenty substrates in the liquid in the second container. Each of the at least two cleaning elements are configured to process a single substrate at a time. Examples of a cleaning element include a megasonic cleaner, a rotating brush cleaner, a buff pad cleaner, a jet spray cleaner, a chemical spin cleaner, a spin drier, and a marangoni drier.