公开(公告)号：US20170194430A1

公开(公告)日：2017-07-06

申请号：US15395928

申请日：2016-12-30

Applicant: Applied Materials, Inc.

Inventor： Bingxi Sun WOOD ,  Michael G. WARD ,  Shiyu SUN ,  Michael CHUDZIK ,  Nam Sung KIM ,  Hua CHUNG ,  Yi-Chiau HUANG ,  Chentsau YING ,  Ying ZHANG ,  Chi-Nung NI ,  Lin DONG ,  Dongqing YANG

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L21/764 ,  H01L21/306 ,  H01L29/423

CPC classification number: H01L29/0673 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0669 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/78696

Abstract: The present disclosure provides methods for forming nanowire spacers for nanowire structures with desired materials in horizontal gate-all-around (hGAA) structures for semiconductor chips. In one example, a method of forming nanowire spaces for nanowire structures on a substrate includes performing a lateral etching process on a substrate having a multi-material layer disposed thereon, wherein the multi-material layer including repeating pairs of a first layer and a second layer, the first and second layers each having a first sidewall and a second sidewall respectively exposed in the multi-material layer, wherein the lateral etching process predominately etches the second layer through the second layer forming a recess in the second layer, filling the recess with a dielectric material, and removing the dielectric layer over filled from the recess.

公开(公告)号：US20170069463A1

公开(公告)日：2017-03-09

申请号：US15259401

申请日：2016-09-08

Applicant: Applied Materials, Inc.

Inventor： Sang Won KANG ,  Nicholas CELESTE ,  Dmitry LUBOMIRSKY ,  Peter HILLMAN ,  Douglas Brenton HAYDEN ,  Dongqing YANG

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3244 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32862

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

Abstract translation: 本公开的实施例通常提供用于处理具有改进的工艺稳定性的衬底的改进方法，在清洁之间增加平均晶片和/或在晶片均匀性内改善。 一个实施例提供了一种调节处理室中的一个或多个室部件的方法。 该方法包括在处理室中放置虚拟衬底，将处理气体混合物流动到处理室以与虚拟衬底反应并在虚设衬底上产生副产物，并对虚拟衬底退火以使副产物升华，同时至少一次吹扫 处理室的管道关闭。