公开(公告)号：US20220037128A1

公开(公告)日：2022-02-03

申请号：US16945445

申请日：2020-07-31

申请人： APPLIED MATERIALS, INC.

发明人： Kirankumar Neelasandra SAVANDAIAH ,  Jiao SONG ,  David GUNTHER ,  Irena H. WYSOK ,  Anthony Chih-Tung CHAN

IPC分类号： H01J37/32 ,  H01L21/687 ,  C23C14/34 ,  H01J37/34

摘要： Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

公开(公告)号：US20210407778A1

公开(公告)日：2021-12-30

申请号：US16916494

申请日：2020-06-30

申请人： APPLIED MATERIALS, INC.

发明人： Jiao SONG ,  Anthony Chih-Tung CHAN ,  David GUNTHER ,  Kirankumar Neelasandra SAVANDAIAH ,  Irena H. WYSOK

IPC分类号： H01J37/34 ,  C23C14/35

摘要： Methods and apparatus for processing a substrate are provided herein. In embodiments, a magnetron assembly for use in a PVD chamber includes: a base plate having a first side, a second side opposite the first side, and a central axis; a magnet plate rotatably coupled to the base plate, wherein the magnet plate rotates with respect to the base plate about an offset axis; a magnet assembly coupled to the magnet plate offset from the offset axis and configured to rotate about the central axis and the offset axis; a first motor coupled to the base plate to rotate the magnet assembly about the central axis; and a second motor coupled to the magnet plate to control an angular position thereof and to position the magnet assembly in each of a plurality of fixed angular positions defining a plurality of different fixed radii.

公开(公告)号：US20220406573A1

公开(公告)日：2022-12-22

申请号：US17351535

申请日：2021-06-18

申请人： Applied Materials, Inc.

发明人： David GUNTHER ,  Siew Kit HOI ,  Kirankumar Neelasandra SAVANDAIAH

IPC分类号： H01J37/32 ,  C23C14/35 ,  C23C14/50

摘要： Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

公开(公告)号：US20220033956A1

公开(公告)日：2022-02-03

申请号：US16945491

申请日：2020-07-31

申请人： APPLIED MATERIALS, INC.

发明人： David GUNTHER ,  Jiao SONG ,  Kirankumar Neelasandra SAVANDAIAH ,  Irena H. WYSOK ,  Anthony Chih-Tung CHAN

IPC分类号： C23C14/16 ,  C23C14/56 ,  C23C14/35 ,  C23C14/50 ,  H01L21/768

摘要： An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

公开(公告)号：US20240242947A1

公开(公告)日：2024-07-18

申请号：US18620405

申请日：2024-03-28

申请人： Applied Materials, Inc.

发明人： David GUNTHER ,  Cheng-Hsiung TSAI ,  Kirankumar Neelasandra SAVANDAIAH

IPC分类号： H01J37/34 ,  C23C14/50 ,  C23C14/56 ,  C23C16/458 ,  H01J37/32

CPC分类号： H01J37/3441 ,  C23C14/50 ,  C23C14/564 ,  C23C16/4585 ,  H01J37/32477 ,  H01J37/32651 ,  H01J37/32724 ,  H01J37/3411

摘要： Embodiments of a process kit are provided herein. In some embodiments, a deposition ring includes: an annular band having an upper surface and a lower surface, wherein the annular band includes a radially inner portion and a radially outer portion, wherein the lower surface includes a step that extends downward from the radially inner portion to the radially outer portion, wherein the step is disposed closer to a radially outermost surface of the annular band than a radially innermost surface of the annular band; an inner lip extending upwards from the upper surface of the annular band, and wherein the upper surface of the inner lip is an uppermost surface of the deposition ring; a channel disposed radially outward of and beneath a lowermost surface of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.