公开(公告)号：US20220033956A1

公开(公告)日：2022-02-03

申请号：US16945491

申请日：2020-07-31

申请人： APPLIED MATERIALS, INC.

发明人： David GUNTHER ,  Jiao SONG ,  Kirankumar Neelasandra SAVANDAIAH ,  Irena H. WYSOK ,  Anthony Chih-Tung CHAN

IPC分类号： C23C14/16 ,  C23C14/56 ,  C23C14/35 ,  C23C14/50 ,  H01L21/768

摘要： An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

公开(公告)号：US20210407778A1

公开(公告)日：2021-12-30

申请号：US16916494

申请日：2020-06-30

申请人： APPLIED MATERIALS, INC.

发明人： Jiao SONG ,  Anthony Chih-Tung CHAN ,  David GUNTHER ,  Kirankumar Neelasandra SAVANDAIAH ,  Irena H. WYSOK

IPC分类号： H01J37/34 ,  C23C14/35

摘要： Methods and apparatus for processing a substrate are provided herein. In embodiments, a magnetron assembly for use in a PVD chamber includes: a base plate having a first side, a second side opposite the first side, and a central axis; a magnet plate rotatably coupled to the base plate, wherein the magnet plate rotates with respect to the base plate about an offset axis; a magnet assembly coupled to the magnet plate offset from the offset axis and configured to rotate about the central axis and the offset axis; a first motor coupled to the base plate to rotate the magnet assembly about the central axis; and a second motor coupled to the magnet plate to control an angular position thereof and to position the magnet assembly in each of a plurality of fixed angular positions defining a plurality of different fixed radii.

公开(公告)号：US20230141298A1

公开(公告)日：2023-05-11

申请号：US17865144

申请日：2022-07-14

申请人： Applied Materials, Inc.

发明人： Anthony Chih-Tung CHAN ,  Adolph Miller ALLEN ,  Mehul CHAUHAN

IPC分类号： H01J37/34 ,  C23C14/35

CPC分类号： H01J37/3452 ,  C23C14/35 ,  H01J37/3417 ,  H01J2237/3323

摘要： Methods and apparatus for generating a magnetic field external to a physical vapor deposition (PVD) chamber to improve etch or deposition uniformity on a substrate disposed inside of the PVD chamber are provided herein. In some embodiments, a process chamber, includes a chamber body defining an interior volume therein; a pedestal disposed in the interior volume for supporting a substrate; a coil disposed in the interior volume above the pedestal; and an external magnet assembly, comprising: a housing coupled to the chamber body; and a plurality of magnets disposed external to the chamber body coupled to the housing and arranged asymmetrically about the chamber body.

公开(公告)号：US20220364230A1

公开(公告)日：2022-11-17

申请号：US17733331

申请日：2022-04-29

申请人： Applied Materials, Inc.

发明人： Rui LI ,  Xiangjin XIE ,  Xianmin TANG ,  Anthony Chih-Tung CHAN

IPC分类号： C23C16/455 ,  H01J37/32

摘要： Methods and apparatus for forming a barrier layer are provided herein. In some embodiments, a method of forming a barrier layer on a substrate includes treating an exposed layer deposited on a substrate and within a feature of the substrate by pulsing a bias power applied to a substrate support supporting the substrate while exposing the layer to a plasma. The exposed layer can be deposited by an atomic layer deposition process, and can be, for example, a tantalum nitride layer. The bias power can be up to 500 watts of RF power at a pulse frequency of about 1 Hz to about 10 kHz. The bias power can be pulsed uniformly or at multiple different levels.

公开(公告)号：US20220037128A1

公开(公告)日：2022-02-03

申请号：US16945445

申请日：2020-07-31

申请人： APPLIED MATERIALS, INC.

发明人： Kirankumar Neelasandra SAVANDAIAH ,  Jiao SONG ,  David GUNTHER ,  Irena H. WYSOK ,  Anthony Chih-Tung CHAN

IPC分类号： H01J37/32 ,  H01L21/687 ,  C23C14/34 ,  H01J37/34

摘要： Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.