公开(公告)号：US20130186859A1

公开(公告)日：2013-07-25

申请号：US13732203

申请日：2012-12-31

申请人： Applied Materials, Inc. a corporation of the State of Delaware, U.S.A

发明人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/02 ,  C23C16/513 ,  B44C1/22

CPC分类号： H01L21/02 ,  B44C1/227 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02104

摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

公开(公告)号：US10304607B2

公开(公告)日：2019-05-28

申请号：US15668064

申请日：2017-08-03

申请人： Applied Materials, Inc.

发明人： Jozef Kudela ,  Carl A. Sorensen ,  John M. White

IPC分类号： H05H1/46 ,  H01F17/06 ,  C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  H01F27/08

摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US09818580B2

公开(公告)日：2017-11-14

申请号：US14727857

申请日：2015-06-01

申请人： Applied Materials, Inc.

发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White ,  Ranjit Indrajit Shinde ,  Seon-Mee Cho ,  Douglas D. Truong

IPC分类号： H05H1/24 ,  H01J37/32 ,  H01P3/00 ,  H01P11/00 ,  H05H1/46 ,  H01P3/06 ,  H01P3/08 ,  H01Q13/22

CPC分类号： H01J37/32082 ,  H01J37/3222 ,  H01J37/32577 ,  H01P3/00 ,  H01P3/06 ,  H01P3/085 ,  H01P11/003 ,  H01Q13/22 ,  H05H1/24 ,  H05H1/46 ,  H05H2001/463 ,  Y10T29/49169

摘要： A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises two conductors, one of which has a plurality of apertures. In one aspect, apertures in different portions of the conductor have different sizes, spacing or orientations. In another aspect, adjacent apertures at successive longitudinal positions are offset along the transverse dimension. In another aspect, the apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

公开(公告)号：US10886053B2

公开(公告)日：2021-01-05

申请号：US16282085

申请日：2019-02-21

申请人： Applied Materials, Inc.

发明人： Jozef Kudela ,  Carl A. Sorensen ,  John M. White

IPC分类号： H05H1/46 ,  H01F17/06 ,  H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H01F27/08

摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US10312475B2

公开(公告)日：2019-06-04

申请号：US15613667

申请日：2017-06-05

申请人： Applied Materials, Inc.

发明人： Tae Kyung Won ,  Soo Young Choi ,  Sanjay D. Yadav ,  Carl A. Sorensen ,  Chien-Teh Kao ,  Suhail Anwar ,  Young Dong Lee

IPC分类号： H01L21/00 ,  H01L51/56 ,  H01L51/52 ,  H01L51/00

摘要： Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.

公开(公告)号：US20180277351A1

公开(公告)日：2018-09-27

申请号：US15924213

申请日：2018-03-17

申请人： Applied Materials, Inc.

发明人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/02 ,  H01J37/32 ,  B44C1/22 ,  C23C16/513

CPC分类号： H01L21/02 ,  B44C1/227 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02104

摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52,55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

公开(公告)号：US11532418B2

公开(公告)日：2022-12-20

申请号：US17113769

申请日：2020-12-07

申请人： Applied Materials, Inc.

发明人： Jozef Kudela ,  Carl A. Sorensen ,  John M. White

IPC分类号： H01F17/06 ,  H01J37/32 ,  H01F27/08 ,  C23C16/455 ,  C23C16/505

摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US11094508B2

公开(公告)日：2021-08-17

申请号：US16221322

申请日：2018-12-14

申请人： Applied Materials, Inc.

发明人： Chien-Teh Kao ,  Tae Kyung Won ,  Carl A. Sorensen ,  Sanjay D. Yadav ,  Young Dong Lee ,  Shinichi Kurita ,  Soo Young Choi

IPC分类号： H01J37/32 ,  H01L21/683 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

摘要： Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

公开(公告)号：US11854771B2

公开(公告)日：2023-12-26

申请号：US17328509

申请日：2021-05-24

申请人： Applied Materials, Inc.

发明人： Chien-Teh Kao ,  Tae Kyung Won ,  Carl A. Sorensen ,  Sanjay D. Yadav ,  Young Dong Lee ,  Shinichi Kurita ,  Soo Young Choi

IPC分类号： H01J37/32 ,  H01L21/683 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

CPC分类号： H01J37/32449 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32458 ,  H01J37/32715 ,  H01L21/02274 ,  H01L21/6833 ,  H01J2237/3321

摘要： Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

公开(公告)号：US10903048B2

公开(公告)日：2021-01-26

申请号：US16031701

申请日：2018-07-10

申请人： Applied Materials, Inc.

发明人： Yui Lun Wu ,  Jozef Kudela ,  Carl A. Sorensen ,  Suhail Anwar

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  H03H7/38 ,  H03H7/40

摘要： A method of processing a material layer on a substrate is provided. The method includes delivering RF power from an RF power source through a match network to a showerhead of a capacitively coupled plasma chamber; igniting a plasma within the capacitively coupled plasma chamber; measuring one or more phase angles of one or more harmonic signals of the RF power relative to a phase of a fundamental frequency of the RF power; and adjusting at least one phase angle of at least one harmonic signal of the RF power relative to the phase of the fundamental frequency of the RF power based on the one or more phase angle measurements.