- 专利标题： CVD thin film stress control method for display application
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申请号： US15613667申请日： 2017-06-05
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公开(公告)号： US10312475B2公开(公告)日： 2019-06-04
- 发明人: Tae Kyung Won , Soo Young Choi , Sanjay D. Yadav , Carl A. Sorensen , Chien-Teh Kao , Suhail Anwar , Young Dong Lee
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson + Sheridan LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L51/56 ; H01L51/52 ; H01L51/00
摘要：
Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.
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