公开(公告)号：US20170145582A1

公开(公告)日：2017-05-25

申请号：US15423298

申请日：2017-02-02

Applicant: APPLIED Materials, Inc.

Inventor： Nolan L. Zimmerman ,  George Mattinger ,  Gregory J. Wilson ,  Eric A. Englhardt ,  Balamurugan Ramasamy

IPC: C25D17/00

CPC classification number: C25D17/004 ,  C25D17/001 ,  C25D17/002 ,  F16J15/00 ,  F16J15/025 ,  F16J15/16 ,  F16J15/3204 ,  F16J15/3236

Abstract: A seal ring for an electrochemical processor does not slip or deflect laterally when pressed against a wafer surface. The seal ring may be on a rotor of the processor, with the seal ring having an outer wall joined to a tip arc through an end. The outer wall may be a straight wall. A relatively rigid support ring may be attached to the seal ring, to provide a more precise sealing dimension. Knife edge seal rings that slip or deflect laterally on the wafer surface may also be used. In these designs, the slipping is substantially uniform and consistent, resulting in improved performance.

公开(公告)号：US10087543B2

公开(公告)日：2018-10-02

申请号：US15423298

申请日：2017-02-02

Applicant: APPLIED Materials, Inc.

Inventor： Nolan L. Zimmerman ,  George Mattinger ,  Gregory J. Wilson ,  Eric A. Englhardt ,  Balamurugan Ramasamy

IPC: F16J9/00 ,  C25D17/00 ,  F16J15/3236 ,  F16J15/3204 ,  F16J15/16 ,  F16J15/00 ,  F16J15/02

Abstract: A seal ring for an electrochemical processor does not slip or deflect laterally when pressed against a wafer surface. The seal ring may be on a rotor of the processor, with the seal ring having an outer wall joined to a tip arc through an end. The outer wall may be a straight wall. A relatively rigid support ring may be attached to the seal ring, to provide a more precise sealing dimension. Knife edge seal rings that slip or deflect laterally on the wafer surface may also be used. In these designs, the slipping is substantially uniform and consistent, resulting in improved performance.

公开(公告)号：US11239058B2

公开(公告)日：2022-02-01

申请号：US16412109

申请日：2019-05-14

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan Balaraman ,  Balamurugan Ramasamy ,  Kartik Shah ,  Mats Larsson ,  Kevin A. Papke ,  Rajasekhar Patibandla ,  Sathyanarayana Bindiganavale ,  Umesh M. Kelkar

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C28/04

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

公开(公告)号：US11810766B2

公开(公告)日：2023-11-07

申请号：US16401871

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan Balaraman ,  Sathyanarayana Bindiganavale ,  Rajasekhar Patibandla ,  Balamurugan Ramasamy ,  Kartik Shah ,  Umesh M. Kelkar ,  Mats Larsson ,  Kevin A. Papke ,  William M. Lu

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/34 ,  C23C14/06 ,  C23C16/06 ,  C23C14/16

CPC classification number: H01J37/32477 ,  C23C14/0641 ,  C23C14/16 ,  C23C16/06 ,  C23C16/34 ,  H01L21/68757

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

公开(公告)号：US20190311886A1

公开(公告)日：2019-10-10

申请号：US16380294

申请日：2019-04-10

Applicant: Applied Materials, Inc.

Inventor： Siva Chandrasekar ,  Quoc Truong ,  Dmitry A. Dzilno ,  Avinash Shervegar ,  Jozef Kudela ,  Tsutomu Tanaka ,  Alexander V. Garachtchenko ,  Yanjun Xia ,  Balamurugan Ramasamy ,  Kartik Shah

IPC: H01J37/32 ,  C23C16/511

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side, a first dielectric adjacent a second side of the powered electrode and at least one second dielectric adjacent the first dielectric on a side opposite the first dielectric. The sum of the thicknesses of the first dielectric and each of the second dielectrics is in the range of about 10 mm to about 17 mm.

公开(公告)号：US11591689B2

公开(公告)日：2023-02-28

申请号：US16791264

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： Mats Larsson ,  Kevin A. Papke ,  Chirag Shaileshbhai Khairnar ,  Rajasekhar Patibandla ,  Karthikeyan Balaraman ,  Balamurugan Ramasamy ,  Kartik Shah ,  Umesh M. Kelkar

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/513 ,  C23C16/44 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.