公开(公告)号：US20240274724A1

公开(公告)日：2024-08-15

申请号：US18414844

申请日：2024-01-17

Applicant: Applied Materials, Inc.

Inventor： Jody A. Fronheiser ,  Sai Hooi Yeong ,  Andre P. Labonte ,  Joseph Francis Shepard, JR. ,  David Collins ,  Ning Li

IPC: H01L29/786 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/78696 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: Horizontal gate-all-around devices and methods of manufacture are described. The hGAA devices comprise a semiconductor material between source regions and drain regions of the device. The method includes formation of a cladding material on a first material followed by forming a tensile film on the cladding layer. The strained tensile film results in a uniform SiGe channel.

公开(公告)号：US20250112054A1

公开(公告)日：2025-04-03

申请号：US18894665

申请日：2024-09-24

Applicant: Applied Materials, Inc.

Inventor： Yuriy Shusterman ,  Sean Reidy ,  Sai Hooi Yeong ,  Lisa Megan McGill ,  Benjamin Colombeau ,  Andre P. Labonte ,  Veeraraghavan S. Basker ,  Balasubramanian Pranatharthiharan

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/26 ,  H01L21/311

Abstract: Exemplary methods of semiconductor processing may include providing an etchant precursor to a processing region of a semiconductor processing chamber. A structure may be disposed within the processing region. The structure may include a first silicon-containing material. The structure may include a second silicon-containing material, an oxygen-containing material, or both. The methods may include contacting the structure with the etchant precursor. The contacting with the etchant precursor may etch at least a portion of the second silicon-containing material or the oxygen-containing material from the structure. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the structure with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the first silicon-containing material.

公开(公告)号：US12158605B2

公开(公告)日：2024-12-03

申请号：US18662859

申请日：2024-05-13

Applicant: Applied Materials, Inc.

Inventor： Levent Colak ,  Ludovic Godet ,  Andre P. Labonte

IPC: F21V8/00

Abstract: Embodiments described herein provide for methods of forming optical device structures. The methods utilize rotation of a substrate, to have the optical device structures formed thereon, and tunability of etch rates of a patterned resist disposed over the substrate and one of a device layer or the substrate to form the optical device structures without multiple lithographic patterning steps and angled etch steps.

公开(公告)号：US12013566B2

公开(公告)日：2024-06-18

申请号：US17958504

申请日：2022-10-03

Applicant: Applied Materials, Inc.

Inventor： Levent Colak ,  Ludovic Godet ,  Andre P. Labonte

IPC: F21V8/00

CPC classification number: G02B6/0065 ,  G02B6/0016 ,  G02B6/0038

Abstract: Embodiments described herein provide for methods of forming optical device structures. The methods utilize rotation of a substrate, to have the optical device structures formed thereon, and tunability of etch rates of a patterned resist disposed over the substrate and one of a device layer or the substrate to form the optical device structures without multiple lithographic patterning steps and angled etch steps.

公开(公告)号：US11487058B2

公开(公告)日：2022-11-01

申请号：US16993067

申请日：2020-08-13

Applicant: Applied Materials, Inc.

Inventor： Levent Colak ,  Ludovic Godet ,  Andre P. Labonte

IPC: F21V8/00

Abstract: Embodiments described herein provide for methods of forming optical device structures. The methods utilize rotation of a substrate, to have the optical device structures formed thereon, and tunability of etch rates of a patterned resist disposed over the substrate and one of a device layer or the substrate to form the optical device structures without multiple lithographic patterning steps and angled etch steps.