公开(公告)号：US20140091417A1

公开(公告)日：2014-04-03

申请号：US14040624

申请日：2013-09-28

Applicant: Applied Materials, Inc.

Inventor： Sum-Yee Betty TANG ,  Martin SEAMONS ,  Kiran V. THADANI ,  Abhijit MALLICK

IPC: C09D5/00 ,  H01L31/18 ,  H01L31/0232

CPC classification number: C09D5/006 ,  C23C16/30 ,  C23C16/452 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02325 ,  H01L31/105 ,  H01L31/18

Abstract: A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a fluorocarbon gas and an additive gas. The remotely energized deposition gas is flowed into the process zone to deposit a low refractive index coating on the substrate.

Abstract translation: 在衬底上的光活性特征上沉积低折射率涂层的方法包括在其上形成具有一个或多个光活性特征的衬底并将衬底放置在工艺区中。 沉积气体在远程气体激发器中通电，沉积气体包括碳氟化合物气体和添加气体。 远程激活的沉积气体流入工艺区域以在衬底上沉积低折射率涂层。

公开(公告)号：US20200161178A1

公开(公告)日：2020-05-21

申请号：US16675385

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Shishi JIANG ,  Kurtis LESCHKIES ,  Pramit MANNA ,  Abhijit MALLICK

IPC: H01L21/768 ,  H01L21/02

Abstract: Embodiments described herein relate to methods of seam-free gapfilling and seam healing that can be carried out using a chamber operable to maintain a supra-atmospheric pressure (e.g., a pressure greater than atmospheric pressure). One embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber and exposing the one or more features of the substrate to at least one precursor at a pressure of about 1 bar or greater. Another embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber. Each of the one or more features has seams of a material. The seams of the material are exposed to at least one precursor at a pressure of about 1 bar or greater.

公开(公告)号：US20200051994A1

公开(公告)日：2020-02-13

申请号：US16150652

申请日：2018-10-03

Applicant: Applied Materials, Inc.

Inventor： Vinod Robert PURAYATH ,  Priyadarshi PANDA ,  Abhijit MALLICK ,  Srinivas GANDIKOTA

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11556

Abstract: A method of forming a memory device including a plurality of nonvolatile memory cells is provided. The method includes forming a hole in a stack of alternating insulator layers and memory cell layers. The stack extends from a bottom to a top, and the stack includes a plurality of insulator layers and plurality of memory cell layers. The method further includes depositing a first portion of a silicon channel layer. The first portion of the silicon channel layer extends from the bottom of the stack to the top of the stack. The method further includes adding a dopant layer over the first portion of the silicon channel layer. The dopant layer includes a first dopant. The method further includes depositing a second portion of the silicon channel layer. The second portion of the silicon channel layer extends from the bottom of the stack to the top of the stack.