摘要:
A device for the regeneration of a clock signal from an external serial bus includes a ring oscillator and counter. The ring oscillator provides n phases of a clock signal. Of these n phases, one phase is used as a reference and is applied to the counter. It is thus possible to count the number of entire reference clock signal periods between a first pulse and a second pulse received from the bus. In reading the state of the phases in the oscillator upon reception of the second pulse, a determination is made for a current phase corresponding to the phase delay between the reference clock signal and the second pulse of the bus. By using a regeneration device that also includes a ring oscillator and a counter, it is possible to regenerate the clock signal of the bus with high precision.
摘要:
A random signal generator uses a folded MOS transistor, whose drain-source current includes a random component, as an electronic noise source. The random signal generator generates a random binary signal from the random component. The invention may be applied, in particular, to smart cards.
摘要:
A random signal generator uses a folded MOS transistor, whose drain-source current includes a random component, as an electronic noise source. The random signal generator generates a random binary signal from the random component. The invention may be applied, in particular, to smart cards.
摘要:
A random signal generator uses a folded MOS transistor, whose drain-source current includes a random component, as an electronic noise source. The random signal generator generates a random binary signal from the random component. The invention may be applied, in particular, to smart cards.
摘要:
A reference level generator in integrated circuit form comprises at least one first current circulation arm in which there are, in series, an N channel transistor and a P channel transistor, one of which is referred to as a reference transistor. The reference transistor has a drain connected to a gate in normal mode, the gate being connected to an output of the generator. Standby mode transistors are interposed between each current circulation arm and a supply terminal, and a mode control input gives a mode signal that turns the standby transistors off in standby mode and turns the standby transistors on in normal mode. A transistor controlled by the mode signal may be connected between the output and a non-floating reference potential, or a pass-gate may be inserted between the gate and the drain of the reference transistor, this gate being controlled by the mode signal to be off in the standby mode.
摘要:
An integrated cell and method for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.
摘要:
An integrated cell for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.
摘要:
The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting the resistor to a stress current which is greater than a current (Im) for which the value of the resistor is maximum.
摘要:
A method and a circuit for scrambling the current signature of a load including at least one integrated circuit executing digital processings, including the step of, at least on the load ground side, combining a current absorbed by a first linear regulator with a current absorbed by at least one capacitive switched-mode circuit with one or several switched capacitances.
摘要:
A one-time programmable memory cell and the programming thereof including a programming transistor which is disposed in series with a polycrystalline silicon programming resistor forming the memory element. The programming is non-destructive with respect to the polycrystalline silicon resistor.